Single Event Effects in 14-Nm Intel Microprocessors

A. Duncan, C. M. Szabo, D. Bossev, K. Label, Aaron M. Williams, M. Gadlage, J. D. Ingalls, Casey H. Hedge, A. Roach, M. Kay
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引用次数: 3

Abstract

Heavy ion and proton test results on multiple commercial 14-nm Intel microprocessors are presented. Testing was performed using commercial motherboards with a mixture of commercial and custom software. Machine check errors, system crashes, graphical glitches, and isolated events with temporary or permanent loss of functionality referred to as hard failures were observed during testing. The hard failures observed while testing the Intel 5th Generation Broadwell 14-nm devices were caused by a companion 32-nm planar bulk CMOS die in the multi-chip package.
14纳米英特尔微处理器中的单事件效应
给出了在多种商用14nm英特尔微处理器上的重离子和质子测试结果。测试是使用混合了商业和定制软件的商业主板进行的。在测试期间观察到机器检查错误、系统崩溃、图形故障以及具有暂时或永久功能丢失的孤立事件(称为硬故障)。在测试Intel第五代Broadwell 14纳米器件时观察到的硬故障是由多芯片封装中的32纳米平面体CMOS芯片引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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