商用三星NAND闪存的重离子、质子和电子单事件效应测量

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI:10.1109/NSREC.2016.7891718

F. Irom, G. Allen, D. Sheldon

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引用次数: 8

摘要

报道了三星8Gb单级NAND闪存的重离子、质子和电子单事件效应测量。在先前用60Co辐照的器件上观察到重离子单比特扰动(SBU)截面的增加。质子磁化率低于预期。没有观察到电子诱导的扰动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heavy Ion, Proton and Electron Single-Event Effect Measurements of a Commercial Samsung NAND Flash Memory

Heavy ion, proton and electron single-event effect measurements of 8Gb Samsung single level NAND flash memory are reported. An increase in the heavy ion single bit upset (SBU) cross section was observed on devices that were irradiated with 60Co previously. The proton susceptibility is less than expected. No electron induced upsets were observed.

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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