SDRAM, DDR2和DDR3存储器的单事件测试

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI:10.1109/NSREC.2016.7891742

S. Guertin, Mehran Amrbar

{"title":"SDRAM, DDR2和DDR3存储器的单事件测试","authors":"S. Guertin, Mehran Amrbar","doi":"10.1109/NSREC.2016.7891742","DOIUrl":null,"url":null,"abstract":"SEE test results are presented for SDRAM, DDR2, and DDR3. No tested devices exhibited SEL. SBUs were observed, but no MBUs were observed in data words. SEFI data were taken at low and high speed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Single Event Testing of SDRAM, DDR2 and DDR3 Memories\",\"authors\":\"S. Guertin, Mehran Amrbar\",\"doi\":\"10.1109/NSREC.2016.7891742\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SEE test results are presented for SDRAM, DDR2, and DDR3. No tested devices exhibited SEL. SBUs were observed, but no MBUs were observed in data words. SEFI data were taken at low and high speed.\",\"PeriodicalId\":135325,\"journal\":{\"name\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2016.7891742\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891742","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

给出了SDRAM、DDR2和DDR3的SEE测试结果。没有测试设备显示SEL。观察到SBUs，但数据字未观察到MBUs。在低速和高速下采集SEFI数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Single Event Testing of SDRAM, DDR2 and DDR3 Memories

SEE test results are presented for SDRAM, DDR2, and DDR3. No tested devices exhibited SEL. SBUs were observed, but no MBUs were observed in data words. SEFI data were taken at low and high speed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

自引率

0.00%

发文量