{"title":"SDRAM、DDR2和DDR3存储器的总电离剂量响应","authors":"Mehran Amrbar, S. Guertin","doi":"10.1109/NSREC.2016.7891750","DOIUrl":null,"url":null,"abstract":"Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories\",\"authors\":\"Mehran Amrbar, S. Guertin\",\"doi\":\"10.1109/NSREC.2016.7891750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.\",\"PeriodicalId\":135325,\"journal\":{\"name\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2016.7891750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories
Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.