SDRAM、DDR2和DDR3存储器的总电离剂量响应

Mehran Amrbar, S. Guertin
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引用次数: 4

摘要

报道了SDRAM、DDR2和DDR3存储器在静态偏置和自动刷新模式下的总电离剂量响应。数据分析显示,当刷新时,某些类型的内存在TID暴露期间卡位显著增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories
Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.
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