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2016 IEEE Radiation Effects Data Workshop (REDW)最新文献

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SEE and TID Effects in Transistors and Voltage Reference Devices 晶体管和电压基准器件中的SEE和TID效应
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891732
J. George, J. R. Srour, M. Tockstein, B. Kwan, A. Wright, J. Bonsall, R. Koga, S. Davis
{"title":"SEE and TID Effects in Transistors and Voltage Reference Devices","authors":"J. George, J. R. Srour, M. Tockstein, B. Kwan, A. Wright, J. Bonsall, R. Koga, S. Davis","doi":"10.1109/NSREC.2016.7891732","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891732","url":null,"abstract":"We tested two transistor and two voltage reference devices for single event effects and combined displacement damage and total ionizing dose effects. The results of these tests are reported along with select on-orbit rate calculations.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125049114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Heavy Ion and Proton Test Results for Micron 4 Gb NAND Flash Memory Micron 4gb NAND快闪记忆体的重离子和质子测试结果
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891716
James Hack, K. Altvater, Deas Brown, Paul Dudek, D. Jaeger, Ellwood Lane, J. Lindley, Brainton Song, Thomas Tittel
{"title":"Heavy Ion and Proton Test Results for Micron 4 Gb NAND Flash Memory","authors":"James Hack, K. Altvater, Deas Brown, Paul Dudek, D. Jaeger, Ellwood Lane, J. Lindley, Brainton Song, Thomas Tittel","doi":"10.1109/NSREC.2016.7891716","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891716","url":null,"abstract":"This paper describes the methodology and test results from heavy ion and proton testing of the Micron 4 Gb NAND flash memory, with particular attention to characterization of the transient high current effect previously observed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131266206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multifunctional Equipment and Test Results for Total Ionizing Dose Testing of Analog Integrated Circuits 模拟集成电路总电离剂量试验的多功能设备和试验结果
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891724
A. Bakerenkov, P. Chubunov, V. Anashin, A. Rodin, V. Felitsyn
{"title":"Multifunctional Equipment and Test Results for Total Ionizing Dose Testing of Analog Integrated Circuits","authors":"A. Bakerenkov, P. Chubunov, V. Anashin, A. Rodin, V. Felitsyn","doi":"10.1109/NSREC.2016.7891724","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891724","url":null,"abstract":"Multifunctional equipment for total ionizing dose testing of different functional types of analog integrated circuits and discrete transistors is developed and described. Corresponding test results for several types of analog devices are presented and discussed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131618533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Displacement Damage Testing of Intersil Analog and Power Management Parts Intersil模拟和电源管理部件的位移损伤测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891711
N. V. van Vonno, K. Scott, L. Pearce, J. S. Gill, F. Ballou
{"title":"Displacement Damage Testing of Intersil Analog and Power Management Parts","authors":"N. V. van Vonno, K. Scott, L. Pearce, J. S. Gill, F. Ballou","doi":"10.1109/NSREC.2016.7891711","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891711","url":null,"abstract":"We report the results of displacement damage testing using 1 MeV equivalent neutron irradiation of a range of Intersil power management and analog parts, including an operational amplifier, voltage reference, linear voltage regulators, comparator, power MOSFET driver, pulse width modulators, analog switches and processor supervisory circuit.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133189292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TID/SEE Tests of the Radiation Hardened DDR2 SDRAM Memory Solution 辐射强化DDR2 SDRAM内存解决方案的TID/SEE测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891748
Pierre Wang, C. Sellier, Pierre Southiratn, D. Nguyen, K. Grurmann
{"title":"TID/SEE Tests of the Radiation Hardened DDR2 SDRAM Memory Solution","authors":"Pierre Wang, C. Sellier, Pierre Southiratn, D. Nguyen, K. Grurmann","doi":"10.1109/NSREC.2016.7891748","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891748","url":null,"abstract":"We report on results of TID/SEL/SEU/SEFI tests of a state of the art RH DDR2-SDRAM Memory solution. The hard errors (TID/SEL) verified at die level, and soft errors (SEU/SEFI) verified at system level.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116242920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Compendium of Single Event Effect Results from NASA Goddard Space Flight Center 美国宇航局戈达德太空飞行中心单事件效应结果汇编
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891706
M. O’Bryan, K. Label, C. M. Szabo, Dakai Chen, M. Campola, M. Casey, J. Lauenstein, E. Wilcox, R. Ladbury, Stanley A. Ikpe, J. Pellish, M. Berg
{"title":"Compendium of Single Event Effect Results from NASA Goddard Space Flight Center","authors":"M. O’Bryan, K. Label, C. M. Szabo, Dakai Chen, M. Campola, M. Casey, J. Lauenstein, E. Wilcox, R. Ladbury, Stanley A. Ikpe, J. Pellish, M. Berg","doi":"10.1109/NSREC.2016.7891706","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891706","url":null,"abstract":"We present the results of single event effect (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129985994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Compendium of Total Ionizing Dose and Displacement Damage Results from NASA Goddard Spaceflight Center 美国宇航局戈达德航天中心总电离剂量和位移损伤结果汇编
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891707
M. Campola, Donna J. Cochran, S. Alt, A. Boutte, Dakai Chen, Robert A. Gigliuto, K. Label, J. Pellish, R. Ladbury, M. Casey, E. Wilcox, M. O’Bryan, J. Lauenstein, M. Xapsos
{"title":"Compendium of Total Ionizing Dose and Displacement Damage Results from NASA Goddard Spaceflight Center","authors":"M. Campola, Donna J. Cochran, S. Alt, A. Boutte, Dakai Chen, Robert A. Gigliuto, K. Label, J. Pellish, R. Ladbury, M. Casey, E. Wilcox, M. O’Bryan, J. Lauenstein, M. Xapsos","doi":"10.1109/NSREC.2016.7891707","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891707","url":null,"abstract":"Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122238701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design Baseline Considerations for a High Dose Rate Irradiator for Total Dose Effects Testing 用于总剂量效应试验的高剂量率辐照器的设计基线考虑
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891710
M. Shannon, Spencer Mickum, Zachary Hope
{"title":"Design Baseline Considerations for a High Dose Rate Irradiator for Total Dose Effects Testing","authors":"M. Shannon, Spencer Mickum, Zachary Hope","doi":"10.1109/NSREC.2016.7891710","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891710","url":null,"abstract":"The testing procedures outlined in MIL-STD-883 Method 1019 for total dose effects require a specific radiological test environment. The present work explores these requirements in comparison to the performance of legacy irradiation systems and to develop a new shielding baseline.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129038274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single Event Effects Testing on the SERDES, Fabric Flip-Flops and PLL in a Radiation-Hardened Flash-Based FPGA-RT4G150 基于抗辐射闪存的FPGA-RT4G150中SERDES、Fabric触发器和锁相环的单事件效应测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891741
Jih-Jong Wang, Durwyn Dsilva, N. Rezzak, Stephen Varela, Sean Cui
{"title":"Single Event Effects Testing on the SERDES, Fabric Flip-Flops and PLL in a Radiation-Hardened Flash-Based FPGA-RT4G150","authors":"Jih-Jong Wang, Durwyn Dsilva, N. Rezzak, Stephen Varela, Sean Cui","doi":"10.1109/NSREC.2016.7891741","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891741","url":null,"abstract":"Heavy-ion beam is used to perform Single Event Effects testing on the Flash-based and radiation hardened FPGA, the RT4G150 device. Soft errors due to SEU and SET in the fabric Flip-Flops and PLL generated clocks are measured and analyzed. SEFIs in PLL and SERDES are also observed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122462978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
IC SEE Comparative Studies at UCL and JINR Heavy Ion Accelerators 参见UCL和JINR重离子加速器的比较研究
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891720
A. Akhmetov, D. Bobrovsky, A. Tararaksin, A. Petrov, L. Kessarinskiy, D. Boychenko, A. Chumakov, A. Rousset, C. Chatry
{"title":"IC SEE Comparative Studies at UCL and JINR Heavy Ion Accelerators","authors":"A. Akhmetov, D. Bobrovsky, A. Tararaksin, A. Petrov, L. Kessarinskiy, D. Boychenko, A. Chumakov, A. Rousset, C. Chatry","doi":"10.1109/NSREC.2016.7891720","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891720","url":null,"abstract":"The paper presents new experimental results for single event effects (SEL, SEU, SET) in modern ICs obtained at \"U-400M\" heavy ion accelerator (JINR, Dubna, Russia) and UCL heavy ion accelerator (UCL university, Louvain-la-Neuve, Belgium). Five digital and analog DUTs (Flash memory, FPGA, MIL-STD-1553 interface IC, operational amplifier and current sensor) were used in the experiment and comparison between UCL and JINR experimental results was done. The UCL and JINR experimental results and its Weibull approximation are in a good agreement for all SEE types.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116573961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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