Heavy Ion and Proton Test Results for Micron 4 Gb NAND Flash Memory

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI:10.1109/NSREC.2016.7891716

James Hack, K. Altvater, Deas Brown, Paul Dudek, D. Jaeger, Ellwood Lane, J. Lindley, Brainton Song, Thomas Tittel

引用次数: 1

Abstract

This paper describes the methodology and test results from heavy ion and proton testing of the Micron 4 Gb NAND flash memory, with particular attention to characterization of the transient high current effect previously observed.

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Micron 4gb NAND快闪记忆体的重离子和质子测试结果

本文介绍了Micron 4gb NAND闪存的重离子和质子测试方法和测试结果，特别关注了先前观察到的瞬态高电流效应的表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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