发布求助
文献互助 智能选刊 最新文献

2016 IEEE Radiation Effects Data Workshop (REDW)最新文献

筛选
英文 中文
Single Event Upset Characterization of the Kintex UltraScale Field Programmable Gate Array Using Proton Irradiation 利用质子辐照对Kintex UltraScale现场可编程门阵列进行单事件扰动表征
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/nsrec.2016.7891743
D. Hiemstra, V. Kirischian, J. Brelski
{"title":"Single Event Upset Characterization of the Kintex UltraScale Field Programmable Gate Array Using Proton Irradiation","authors":"D. Hiemstra, V. Kirischian, J. Brelski","doi":"10.1109/nsrec.2016.7891743","DOIUrl":"https://doi.org/10.1109/nsrec.2016.7891743","url":null,"abstract":"Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Kintex UltraScale FPGA are presented. Upset rates in the space radiation environment are estimated.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128131509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Single-Event Effects and Total Dose Testing of the Intersil ISL72027SEH CAN Bus Transceiver Intersil ISL72027SEH CAN总线收发器的单事件效应和总剂量测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891744
N. V. van Vonno, A. Robinson, L. Pearce, E. Thomson
{"title":"Single-Event Effects and Total Dose Testing of the Intersil ISL72027SEH CAN Bus Transceiver","authors":"N. V. van Vonno, A. Robinson, L. Pearce, E. Thomson","doi":"10.1109/NSREC.2016.7891744","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891744","url":null,"abstract":"We provide a discussion of the Controller Area Network (CAN) networking protocol as used in space applications and then report the results of destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL72027SEH CAN bus transceiver. We conclude with a brief discussion of 60Co total ionizing dose (TID) testing results.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124294490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
3 MeV Proton Irradiation of Commercial State of the Art Photonic Mixer Devices 3 MeV质子辐照的最新商业光子混合装置
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891702
M. Grimm, B. Voss, E. Wendler
{"title":"3 MeV Proton Irradiation of Commercial State of the Art Photonic Mixer Devices","authors":"M. Grimm, B. Voss, E. Wendler","doi":"10.1109/NSREC.2016.7891702","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891702","url":null,"abstract":"Ten identical novel commercial off-the-shelf near range sensors whose working principle is based on a time of flight measurement were irradiated with 3 MeV protons. Degradation effects were observed from 7×10^10 p/cm² on.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117099847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Use of 14-Mev Monoenergetic Neutrons to Improve the Single Event Latch-Up Response of the Texas Instruments VSP1221 利用14-Mev单能中子改善德州仪器VSP1221的单事件锁存响应
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891746
A. Benedetto, J. Salzman, Michael J. Tostanoski, J. Benedetto
{"title":"The Use of 14-Mev Monoenergetic Neutrons to Improve the Single Event Latch-Up Response of the Texas Instruments VSP1221","authors":"A. Benedetto, J. Salzman, Michael J. Tostanoski, J. Benedetto","doi":"10.1109/NSREC.2016.7891746","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891746","url":null,"abstract":"The SEL response of the VSP1221 is improved by exposure to 14MeV monoenergetic neutrons while only causing small changes in the parametric response. This approach could be used to advance COTS components in spaceborne applications.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114569508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heavy Ion and Proton Induced Radiation Effects on Commercial Analog Switch Microcircuits 重离子和质子诱导辐射对商业模拟开关微电路的影响
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891715
R. Koga, J. George, S. Davis, B. Buck, K. Bojanowski, A. Cunningham
{"title":"Heavy Ion and Proton Induced Radiation Effects on Commercial Analog Switch Microcircuits","authors":"R. Koga, J. George, S. Davis, B. Buck, K. Bojanowski, A. Cunningham","doi":"10.1109/NSREC.2016.7891715","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891715","url":null,"abstract":"We present observations of heavy ion and proton induced radiation effects on selected COTS analog switch integrated microcircuits.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126699273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation Hardness Performance of 2 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications 空间外延片制备2gb LPDDR SDRAM的辐射硬度性能
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891729
M. Park, J. Chae, Chol Lee, Jung-Su Lee, I. H. Shin, Sinae Ji
{"title":"Radiation Hardness Performance of 2 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications","authors":"M. Park, J. Chae, Chol Lee, Jung-Su Lee, I. H. Shin, Sinae Ji","doi":"10.1109/NSREC.2016.7891729","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891729","url":null,"abstract":"Radiation hardness performance of 2 Gbit low-power double data rate synchronous dynamic random access memories (LPDDR SDRAMs) fabricated on a 4 μm epitaxial layer (38 nm CMOS technology) are presented.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117337539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guide to the 2015 IEEE Radiation Effects Data Workshop Record 2015年IEEE辐射效应数据研讨会记录指南
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891714
D. Hiemstra
{"title":"Guide to the 2015 IEEE Radiation Effects Data Workshop Record","authors":"D. Hiemstra","doi":"10.1109/NSREC.2016.7891714","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891714","url":null,"abstract":"The 2015 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132324577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
SEL Site Localization Using Masking and PEM Imaging Techniques: A Case Study on Xilinx 28nm 7-Series FPGAs 使用掩蔽和PEM成像技术的SEL位点定位:Xilinx 28nm 7系列fpga的案例研究
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891736
W. Rudge, C. Dinkins, W. Boesch, D. Vail, Joshua P. Bruckmeyer, G. Swift
{"title":"SEL Site Localization Using Masking and PEM Imaging Techniques: A Case Study on Xilinx 28nm 7-Series FPGAs","authors":"W. Rudge, C. Dinkins, W. Boesch, D. Vail, Joshua P. Bruckmeyer, G. Swift","doi":"10.1109/NSREC.2016.7891736","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891736","url":null,"abstract":"An unusual methodology for localizing sparse SEL-susceptible sites was successfully used to isolate the die region and identify the sensitive subcircuit responsible for a low cross-section, low-current latchup susceptibility in Xilinx 28nm 7-Series FPGAs. Die masking and photoemission electron microscopy (PEM) imaging contributed to the identification of the circuitry responsible for the latchup susceptibility in 7-Series devices. These results point to a possible approach for using selected devices from this family in high reliability space applications.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114349515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Heavy Ion Induced Single-Event Latchup Screening of Integrated Circuits Using Commercial Off-the-Shelf Evaluation Boards 使用商用现成评估板的集成电路重离子诱导单事件锁定筛选
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891717
G. Allen, F. Irom, L. Scheick, Sergeh Vartanian, Michael O'Connor
{"title":"Heavy Ion Induced Single-Event Latchup Screening of Integrated Circuits Using Commercial Off-the-Shelf Evaluation Boards","authors":"G. Allen, F. Irom, L. Scheick, Sergeh Vartanian, Michael O'Connor","doi":"10.1109/NSREC.2016.7891717","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891717","url":null,"abstract":"We present heavy ion single-event latchup (SEL) screening data for a variety of commercial-off-the-shelf (COTS) devices intended for use on low-cost missions, and discuss the device preparation techniques used to expose the die for ground-based heavy-ion testing.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125271290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
TID Irradiation Facility Utilizing Novel Alanine Dosimetry 利用新型丙氨酸剂量法的TID辐照设施
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891747
Aridio M. Sanchez, Victor Brisan, A. Difonzo
{"title":"TID Irradiation Facility Utilizing Novel Alanine Dosimetry","authors":"Aridio M. Sanchez, Victor Brisan, A. Difonzo","doi":"10.1109/NSREC.2016.7891747","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891747","url":null,"abstract":"VPT Rad provides electrical test solutions and cobalt-60 gamma irradiation facilities utilizing NIST traceable Alanine Dosimetry. This dosimetry technique ensures that Total Ionizing Dose (TID) gamma exposures meet or exceed the requirements of MIL STD-750/883 TM 1019.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"52 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130452655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信