空间外延片制备2gb LPDDR SDRAM的辐射硬度性能

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891729

M. Park, J. Chae, Chol Lee, Jung-Su Lee, I. H. Shin, Sinae Ji

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引用次数: 0

摘要

介绍了在4 μm外延层(38 nm CMOS技术)上制备的2 gb低功耗双数据速率同步动态随机存取存储器(LPDDR sdram)的辐射硬度性能。

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Radiation Hardness Performance of 2 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications

Radiation hardness performance of 2 Gbit low-power double data rate synchronous dynamic random access memories (LPDDR SDRAMs) fabricated on a 4 μm epitaxial layer (38 nm CMOS technology) are presented.

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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