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2016 IEEE Radiation Effects Data Workshop (REDW)最新文献

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Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices 伽玛曝光对微光子器件用硫系玻璃薄膜的影响
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891712
Spencer Novak, Vivek Singh, Corentin Monmeyran, A. Ingram, Zhaohong Han, Hongtao Lin, N. Borodinov, N. Patel, Qingyang Du, Juejun Hu, I. Luzinov, R. Golovchak, A. Agarwal, K. Richardson
{"title":"Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices","authors":"Spencer Novak, Vivek Singh, Corentin Monmeyran, A. Ingram, Zhaohong Han, Hongtao Lin, N. Borodinov, N. Patel, Qingyang Du, Juejun Hu, I. Luzinov, R. Golovchak, A. Agarwal, K. Richardson","doi":"10.1109/NSREC.2016.7891712","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891712","url":null,"abstract":"Bulk and thermally evaporated film forms of As2Se3 and Ge23Sb7S70 were subjected to gamma irradiation and characterized periodically after exposure. Differences in the effect of exposure were observed between bulk and film forms.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121155020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation Hardness of the CLARO8 ASIC: A Fast Single-Photon Counting Chip for the LHCb Experiment at CERN 欧洲核子研究中心LHCb实验用快速单光子计数芯片CLARO8 ASIC的辐射硬度
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891728
M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. Cotta Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti
{"title":"Radiation Hardness of the CLARO8 ASIC: A Fast Single-Photon Counting Chip for the LHCb Experiment at CERN","authors":"M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. Cotta Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti","doi":"10.1109/NSREC.2016.7891728","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891728","url":null,"abstract":"Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total- ionizing dose and single event effects.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"411 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115938143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Recent Gallium Nitride Power HEMT Single-Event Testing Results 氮化镓功率HEMT单事件测试最新结果
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891731
L. Scheick
{"title":"Recent Gallium Nitride Power HEMT Single-Event Testing Results","authors":"L. Scheick","doi":"10.1109/NSREC.2016.7891731","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891731","url":null,"abstract":"The results of recent Single Event Effect (SEE) testing of newly available power GaN HEMTs are presented. High power GaN HEMT devices from two manufacturers were tested with heavy ions. Destructive SEE was observed in all test devices. The failure voltage threshold, cross-section, and angular dependence are investigated.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123843356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
COTS Components Radiation Test Activity and Results at MSSL MSSL的COTS组件辐射测试活动和结果
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891708
Daohua Hu
{"title":"COTS Components Radiation Test Activity and Results at MSSL","authors":"Daohua Hu","doi":"10.1109/NSREC.2016.7891708","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891708","url":null,"abstract":"this paper reports a full radiation test results for two popular commercial off the shelf (COTS) devices ADC128S102 and DAC121S101, targeted for use in MSSL's VIS instrument on ESA's EUCLID mission. The tests include total ionization dose (TID) and single event effect (SEE). The TID test shows both devices have passed 30krad test limit. Single event latch-up (SEL) has been observed at both devices at LET of 60 MeV.cm2.mg-1 or below.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127214973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SEE Testing of the 4 Gb Samsung and Spansion Flash NAND 参见4gb三星和Spansion闪存NAND的测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891733
D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson
{"title":"SEE Testing of the 4 Gb Samsung and Spansion Flash NAND","authors":"D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson","doi":"10.1109/NSREC.2016.7891733","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891733","url":null,"abstract":"Single event effect (SEE) testing was performed on the Samsung and Spansion 4 Gb NAND flash devices. Testing was performed up to LET = 41 MeV cm2/mg. The parts were characterized for a variety of SEE. Testing and analysis showed that MBU became more prevalent at higher LET values.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"87 3-4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131675261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEL and TID Test Results of a Hardened CAN Transceiver 硬化CAN收发器的SEL和TID测试结果
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891734
M. Von Thun, D. Bass, D. Walz, Rex Anderson, T. Farris
{"title":"SEL and TID Test Results of a Hardened CAN Transceiver","authors":"M. Von Thun, D. Bass, D. Walz, Rex Anderson, T. Farris","doi":"10.1109/NSREC.2016.7891734","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891734","url":null,"abstract":"The SEL, SEGR, SEB and TID test results are presented for the Cobham CAN FD Transceiver. The device is SEL, SEGR, and SEB immune to a LET ≤ 100 MeV·cm2/mg and TID qualified to 100krad(Si).","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132388229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Input Size Effects on the Radiation-Sensitivity of Modern Parallel Processors 输入尺寸对现代并行处理器辐射灵敏度的影响
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891721
Daniel Oliveira, L. Pilla, Fernando Fernandes, Caio B. Lunardi, I. Koren, P. Navaux, L. Carro, P. Rech
{"title":"Input Size Effects on the Radiation-Sensitivity of Modern Parallel Processors","authors":"Daniel Oliveira, L. Pilla, Fernando Fernandes, Caio B. Lunardi, I. Koren, P. Navaux, L. Carro, P. Rech","doi":"10.1109/NSREC.2016.7891721","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891721","url":null,"abstract":"In this paper, we inspect the impact of modifying benchmarks' input sizes on parallel processors reliability. A larger input size imposes a higher scheduler strain, potentially increasing the parallel processor's radiation sensitivity. Additionally, input size affects the parallel codes throughput, the number of resources used for computation, and their criticality. The impact of input size is experimentally studied by comparing the radiation sensitivity of three modern parallel processors: Intel Xeon Phis, NVIDIA K20, and K40. Our test procedure has shown that parallel threads management significantly affects the device Silent Data Corruption sensitivity. Traditional reliability evaluation methodologies may result is a significant error (up to 200%) in the estimated sensitivity of parallel processors to radiation.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121330641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
ELDRS Characterization to 300 krad of Texas Instruments High Speed Amplifier LMH6702 300克拉德州仪器高速放大器LMH6702的ELDRS特性
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891713
K. Kruckmeyer, T. Trinh
{"title":"ELDRS Characterization to 300 krad of Texas Instruments High Speed Amplifier LMH6702","authors":"K. Kruckmeyer, T. Trinh","doi":"10.1109/NSREC.2016.7891713","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891713","url":null,"abstract":"TI's LMH6702 (5962F0254601VxA) was tested to 300 krad at a dose rate of 10 mrad/s. Testing to 300 krad took one year. The LMH6702 was found to be ELDRS free.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121956634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation Tolerance of Commercial-Off-The-Shelf Components Deployed in an Underground Nuclear Decommissioning Embedded System 商用现货组件在地下核退役嵌入式系统中的辐射容限
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891730
M. Nancekievill, S. Watson, P. Green, B. Lennox
{"title":"Radiation Tolerance of Commercial-Off-The-Shelf Components Deployed in an Underground Nuclear Decommissioning Embedded System","authors":"M. Nancekievill, S. Watson, P. Green, B. Lennox","doi":"10.1109/NSREC.2016.7891730","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891730","url":null,"abstract":"Robotics and embedded systems are increasingly used and deployed in harsh environments such as nuclear decommissioning and radioactive waste handling. Development of new, low-cost, robotic solutions, requires commercial-off-the-shelf (COTS) components to survive radioactive exposure. Understanding the response of these components to γ-radiation is important for safe and reliable deployment. Power supply regulation and microcontrollers have been highlighted as sensitive to radiation and this study determines experimentally the characteristics of degradation for COTS voltage references, voltage regulators and a microcontroller. The findings lead to development of a discrete voltage regulator constructed with individual BJTs that exhibits increased radiation tolerance.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"51 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116324077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS 32纳米SOI CMOS中8位200 msps开关电容管道a - d转换器的总电离剂量表征
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI: 10.1109/NSREC.2016.7891749
A. Zanchi, M. Cabañas-Holmen, M. Yao, B. Meaker, A. Amort
{"title":"Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS","authors":"A. Zanchi, M. Cabañas-Holmen, M. Yao, B. Meaker, A. Amort","doi":"10.1109/NSREC.2016.7891749","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891749","url":null,"abstract":"A Radiation-Hardened By Design 8-bit 32nm SOI CMOS pipeline ADC shows no AC performance nor non-linearity worsening vs. TID when operated at 200MSps sampling rate, -1dBFS sinewave input amplitude. The circuit shows no visible performance variation during irradiation, and maintains >42dBFS SNR, >61dBc SFDR up to 1Mrad(Si) after LMS (Least Mean Square) gain and offset calibration techniques are applied.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115184342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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