Recent Gallium Nitride Power HEMT Single-Event Testing Results

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891731

L. Scheick

引用次数: 4

Abstract

The results of recent Single Event Effect (SEE) testing of newly available power GaN HEMTs are presented. High power GaN HEMT devices from two manufacturers were tested with heavy ions. Destructive SEE was observed in all test devices. The failure voltage threshold, cross-section, and angular dependence are investigated.

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氮化镓功率HEMT单事件测试最新结果

本文介绍了最新可用功率GaN hemt的单事件效应(SEE)测试结果。两家厂商的高功率GaN HEMT器件进行了重离子测试。在所有测试装置中均观察到破坏性SEE。研究了失效电压阈值、截面和角度依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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