A. Zanchi, M. Cabañas-Holmen, M. Yao, B. Meaker, A. Amort
{"title":"Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS","authors":"A. Zanchi, M. Cabañas-Holmen, M. Yao, B. Meaker, A. Amort","doi":"10.1109/NSREC.2016.7891749","DOIUrl":null,"url":null,"abstract":"A Radiation-Hardened By Design 8-bit 32nm SOI CMOS pipeline ADC shows no AC performance nor non-linearity worsening vs. TID when operated at 200MSps sampling rate, -1dBFS sinewave input amplitude. The circuit shows no visible performance variation during irradiation, and maintains >42dBFS SNR, >61dBc SFDR up to 1Mrad(Si) after LMS (Least Mean Square) gain and offset calibration techniques are applied.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A Radiation-Hardened By Design 8-bit 32nm SOI CMOS pipeline ADC shows no AC performance nor non-linearity worsening vs. TID when operated at 200MSps sampling rate, -1dBFS sinewave input amplitude. The circuit shows no visible performance variation during irradiation, and maintains >42dBFS SNR, >61dBc SFDR up to 1Mrad(Si) after LMS (Least Mean Square) gain and offset calibration techniques are applied.