Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS

A. Zanchi, M. Cabañas-Holmen, M. Yao, B. Meaker, A. Amort
{"title":"Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS","authors":"A. Zanchi, M. Cabañas-Holmen, M. Yao, B. Meaker, A. Amort","doi":"10.1109/NSREC.2016.7891749","DOIUrl":null,"url":null,"abstract":"A Radiation-Hardened By Design 8-bit 32nm SOI CMOS pipeline ADC shows no AC performance nor non-linearity worsening vs. TID when operated at 200MSps sampling rate, -1dBFS sinewave input amplitude. The circuit shows no visible performance variation during irradiation, and maintains >42dBFS SNR, >61dBc SFDR up to 1Mrad(Si) after LMS (Least Mean Square) gain and offset calibration techniques are applied.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

A Radiation-Hardened By Design 8-bit 32nm SOI CMOS pipeline ADC shows no AC performance nor non-linearity worsening vs. TID when operated at 200MSps sampling rate, -1dBFS sinewave input amplitude. The circuit shows no visible performance variation during irradiation, and maintains >42dBFS SNR, >61dBc SFDR up to 1Mrad(Si) after LMS (Least Mean Square) gain and offset calibration techniques are applied.
32纳米SOI CMOS中8位200 msps开关电容管道a - d转换器的总电离剂量表征
当采样率为200MSps,正弦波输入幅值为-1dBFS时,8位32nm SOI CMOS管道ADC与TID相比,无交流性能和非线性恶化。该电路在辐照期间没有明显的性能变化,在LMS(最小均方)增益和失调校准技术应用后,SNR保持42dBFS, SFDR保持61dBc,最高可达1Mrad(Si)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信