32纳米SOI CMOS中8位200 msps开关电容管道a - d转换器的总电离剂量表征

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891749

A. Zanchi, M. Cabañas-Holmen, M. Yao, B. Meaker, A. Amort

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引用次数: 4

摘要

当采样率为200MSps，正弦波输入幅值为-1dBFS时，8位32nm SOI CMOS管道ADC与TID相比，无交流性能和非线性恶化。该电路在辐照期间没有明显的性能变化，在LMS(最小均方)增益和失调校准技术应用后，SNR保持42dBFS, SFDR保持61dBc，最高可达1Mrad(Si)。

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Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS

A Radiation-Hardened By Design 8-bit 32nm SOI CMOS pipeline ADC shows no AC performance nor non-linearity worsening vs. TID when operated at 200MSps sampling rate, -1dBFS sinewave input amplitude. The circuit shows no visible performance variation during irradiation, and maintains >42dBFS SNR, >61dBc SFDR up to 1Mrad(Si) after LMS (Least Mean Square) gain and offset calibration techniques are applied.

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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