SEE Testing of the 4 Gb Samsung and Spansion Flash NAND

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891733

D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson

引用次数: 0

Abstract

Single event effect (SEE) testing was performed on the Samsung and Spansion 4 Gb NAND flash devices. Testing was performed up to LET = 41 MeV cm2/mg. The parts were characterized for a variety of SEE. Testing and analysis showed that MBU became more prevalent at higher LET values.

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参见4gb三星和Spansion闪存NAND的测试

对三星和Spansion 4gb NAND闪存器件进行了单事件效应(SEE)测试。测试进行到LET = 41 MeV cm2/mg。对零件进行了多种SEE表征。测试和分析表明，在较高的LET值下，MBU变得更加普遍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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