伽玛曝光对微光子器件用硫系玻璃薄膜的影响

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891712

Spencer Novak, Vivek Singh, Corentin Monmeyran, A. Ingram, Zhaohong Han, Hongtao Lin, N. Borodinov, N. Patel, Qingyang Du, Juejun Hu, I. Luzinov, R. Golovchak, A. Agarwal, K. Richardson

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引用次数: 0

摘要

对As2Se3和Ge23Sb7S70的体膜和热蒸发膜进行了γ辐照，并在辐照后周期性地进行了表征。曝光效果的差异在散装和胶片形式之间被观察到。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of Gamma Exposure on Chalcogenide Glass Films for Microphotonic Devices

Bulk and thermally evaporated film forms of As2Se3 and Ge23Sb7S70 were subjected to gamma irradiation and characterized periodically after exposure. Differences in the effect of exposure were observed between bulk and film forms.

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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