欧洲核子研究中心LHCb实验用快速单光子计数芯片CLARO8 ASIC的辐射硬度

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891728

M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. Cotta Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti

{"title":"欧洲核子研究中心LHCb实验用快速单光子计数芯片CLARO8 ASIC的辐射硬度","authors":"M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. Cotta Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti","doi":"10.1109/NSREC.2016.7891728","DOIUrl":null,"url":null,"abstract":"Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total- ionizing dose and single event effects.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"411 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Radiation Hardness of the CLARO8 ASIC: A Fast Single-Photon Counting Chip for the LHCb Experiment at CERN\",\"authors\":\"M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. Cotta Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti\",\"doi\":\"10.1109/NSREC.2016.7891728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total- ionizing dose and single event effects.\",\"PeriodicalId\":135325,\"journal\":{\"name\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"411 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2016.7891728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

介绍了为升级CERN LHCb RICH探测器而采用AMS 0.35微米CMOS技术设计的CLARO8专用集成电路的辐射硬度测试，包括总电离剂量和单事件效应的测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Radiation Hardness of the CLARO8 ASIC: A Fast Single-Photon Counting Chip for the LHCb Experiment at CERN

Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total- ionizing dose and single event effects.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

自引率

0.00%

发文量