IC SEE Comparative Studies at UCL and JINR Heavy Ion Accelerators

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 1900-01-01 DOI:10.1109/NSREC.2016.7891720

A. Akhmetov, D. Bobrovsky, A. Tararaksin, A. Petrov, L. Kessarinskiy, D. Boychenko, A. Chumakov, A. Rousset, C. Chatry

引用次数: 14

Abstract

The paper presents new experimental results for single event effects (SEL, SEU, SET) in modern ICs obtained at "U-400M" heavy ion accelerator (JINR, Dubna, Russia) and UCL heavy ion accelerator (UCL university, Louvain-la-Neuve, Belgium). Five digital and analog DUTs (Flash memory, FPGA, MIL-STD-1553 interface IC, operational amplifier and current sensor) were used in the experiment and comparison between UCL and JINR experimental results was done. The UCL and JINR experimental results and its Weibull approximation are in a good agreement for all SEE types.

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参见UCL和JINR重离子加速器的比较研究

本文介绍了在“U-400M”重离子加速器(俄罗斯杜布纳JINR)和UCL重离子加速器(比利时Louvain-la-Neuve UCL大学)上获得的现代集成电路中单事件效应(SEL, SEU, SET)的新实验结果。实验中使用了5个数字和模拟dut(闪存、FPGA、MIL-STD-1553接口IC、运算放大器和电流传感器)，并将UCL和JINR实验结果进行了比较。UCL和JINR的实验结果及其威布尔近似对所有SEE类型都有很好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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