晶体管和电压基准器件中的SEE和TID效应

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI:10.1109/NSREC.2016.7891732

J. George, J. R. Srour, M. Tockstein, B. Kwan, A. Wright, J. Bonsall, R. Koga, S. Davis

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引用次数: 2

摘要

我们测试了两个晶体管和两个电压基准器件的单事件效应和综合位移损伤和总电离剂量效应。报告了这些试验的结果以及选定的在轨速率计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEE and TID Effects in Transistors and Voltage Reference Devices

We tested two transistor and two voltage reference devices for single event effects and combined displacement damage and total ionizing dose effects. The results of these tests are reported along with select on-orbit rate calculations.

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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