辐射强化DDR2 SDRAM内存解决方案的TID/SEE测试

Pierre Wang, C. Sellier, Pierre Southiratn, D. Nguyen, K. Grurmann
{"title":"辐射强化DDR2 SDRAM内存解决方案的TID/SEE测试","authors":"Pierre Wang, C. Sellier, Pierre Southiratn, D. Nguyen, K. Grurmann","doi":"10.1109/NSREC.2016.7891748","DOIUrl":null,"url":null,"abstract":"We report on results of TID/SEL/SEU/SEFI tests of a state of the art RH DDR2-SDRAM Memory solution. The hard errors (TID/SEL) verified at die level, and soft errors (SEU/SEFI) verified at system level.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"TID/SEE Tests of the Radiation Hardened DDR2 SDRAM Memory Solution\",\"authors\":\"Pierre Wang, C. Sellier, Pierre Southiratn, D. Nguyen, K. Grurmann\",\"doi\":\"10.1109/NSREC.2016.7891748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on results of TID/SEL/SEU/SEFI tests of a state of the art RH DDR2-SDRAM Memory solution. The hard errors (TID/SEL) verified at die level, and soft errors (SEU/SEFI) verified at system level.\",\"PeriodicalId\":135325,\"journal\":{\"name\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2016.7891748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们报告最新的RH DDR2-SDRAM内存解决方案的TID/SEL/SEU/SEFI测试结果。硬错误(TID/SEL)在模具级验证,软错误(SEU/SEFI)在系统级验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
TID/SEE Tests of the Radiation Hardened DDR2 SDRAM Memory Solution
We report on results of TID/SEL/SEU/SEFI tests of a state of the art RH DDR2-SDRAM Memory solution. The hard errors (TID/SEL) verified at die level, and soft errors (SEU/SEFI) verified at system level.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信