几种商用光耦合器中质子位移损伤的测量

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI:10.1109/NSREC.2016.7891723

F. Irom, G. Allen, B. Rax

{"title":"几种商用光耦合器中质子位移损伤的测量","authors":"F. Irom, G. Allen, B. Rax","doi":"10.1109/NSREC.2016.7891723","DOIUrl":null,"url":null,"abstract":"Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with IF = 10 mA at 1 x 1012 1-MeV n/cm2 fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 1012 1-MeV n/cm2 fluence in Silicon, respectively.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Measurements of Proton Displacement Damage in Several Commercial Optocouplers\",\"authors\":\"F. Irom, G. Allen, B. Rax\",\"doi\":\"10.1109/NSREC.2016.7891723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with IF = 10 mA at 1 x 1012 1-MeV n/cm2 fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 1012 1-MeV n/cm2 fluence in Silicon, respectively.\",\"PeriodicalId\":135325,\"journal\":{\"name\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2016.7891723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

报道了Isolink OLS049、Micropac 66296-101、66224-103JANTX和66179-003上质子位移损伤(DD)的测量结果。66179-003降解最严重，当IF = 10 mA，在硅中1 × 1012 1- mev n/cm2的影响下使用时，初始CTR保留13%。OLS049、66296-101和66224-103JANTX在硅中的剩余CTR百分比分别为21%、32%和79%，影响为2 × 1012 1-MeV n/cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Measurements of Proton Displacement Damage in Several Commercial Optocouplers

Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with IF = 10 mA at 1 x 1012 1-MeV n/cm2 fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 1012 1-MeV n/cm2 fluence in Silicon, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

自引率

0.00%

发文量