Measurements of Proton Displacement Damage in Several Commercial Optocouplers

2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI:10.1109/NSREC.2016.7891723

F. Irom, G. Allen, B. Rax

引用次数: 3

Abstract

Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with IF = 10 mA at 1 x 1012 1-MeV n/cm2 fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 1012 1-MeV n/cm2 fluence in Silicon, respectively.

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几种商用光耦合器中质子位移损伤的测量

报道了Isolink OLS049、Micropac 66296-101、66224-103JANTX和66179-003上质子位移损伤(DD)的测量结果。66179-003降解最严重，当IF = 10 mA，在硅中1 × 1012 1- mev n/cm2的影响下使用时，初始CTR保留13%。OLS049、66296-101和66224-103JANTX在硅中的剩余CTR百分比分别为21%、32%和79%，影响为2 × 1012 1-MeV n/cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Radiation Effects Data Workshop (REDW)

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