2016 IEEE Symposium on VLSI Technology最新文献_第5页

A highly scalable poly-Si junctionless FETs featuring a novel multi-stacking hybrid P/N layer and vertical gate with very high Ion/Ioff for 3D stacked ICs 一种高度可扩展的多晶硅无结场效应管，具有新颖的多层混合P/N层和垂直栅极，用于3D堆叠ic

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573429

Ya-Chi Cheng, Hung-Bin Chen, Chun-Yen Chang, Chun‐Hu Cheng, Yi-Jia Shih, Yung-Chun Wu

引用次数: 11

GDOT: A graphene-based nanofunction for dot-product computation GDOT:基于石墨烯的点积计算纳米函数

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573377

Ning Wang, Sujan Kumar Gonugondla, Ihab Nahlus, Naresh R Shanbhag, E. Pop

引用次数: 11

Statistical limits of contact resistivity due to atomistic variation in nanoscale contacts 纳米级接触中原子变化引起的接触电阻率的统计限制

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573422

G. Shine, C. Weber, K. Saraswat

引用次数: 4

RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs 超尺度近弹道锗纳米线nmosfet的RTN与低频噪声

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573421

Wangran Wu, Heng Wu, M. Si, N. Conrad, Yi Zhao, P. Ye

引用次数: 10

Ultra low power coupled oscillator arrays for computer vision applications 用于计算机视觉应用的超低功耗耦合振荡器阵列

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573439

N. Shukla, Wei-Yu Tsai, M. Jerry, M. Barth, V. Narayanan, Suman Datta

引用次数: 32

Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels 直接三维观察多晶硅和In1−xGaxAs三维NAND垂直通道的传导

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573430

U. Celano, E. Capogreco, Judit Lisoni, A. Arreghini, Bernardette Kunert, W. Guo, G. V. D. Bosch, J. V. Houdt, K. D. Meyer, Arnaud Furnémont, Wilfried Vandervorst

引用次数: 5

Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER) 低温接触注入非晶化和固相外延再生(SPER)超低p型SiGe接触电阻硅化钛衬里finfet

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573384

Y. R. Yang, N. Breil, C. Y. Yang, J. Hsieh, F. Chiang, B. Colombeau, B. Guo, K. Shim, N. Variam, G. Leung, J. Hebb, S. Sharma, C. Ni, J. Ren, J. Wen, J. H. Park, H. Chen, S. Chen, M. Hou, D. Tsai, J. Kuo, D. Liao, M. Chudzik, S. H. Lin, H. Huang, N. H. Yang, J. F. Lin, C. Tsai, G. Hung, S. Hsu, O. Cheng, J. Y. Wu, T. Yew

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引用次数: 18

Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications 基于te的非晶二元OTS器件，具有优异的选择特性，用于x点存储应用

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573389

Y. Koo, K. Baek, H. Hwang

引用次数: 41

Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application 选择性清除Si1 - xGex通道上界面层的geox，用于高迁移率Si/Si1 - xGex CMOS应用

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573369

C. Lee, H. Kim, P. Jamison, R. Southwick, S. Mochizuki, K. Watanabe, R. Bao, R. Galatage, S. Guillaumet, T. Ando, R. Pandey, A. Konar, B. Lherron, J. Fronheiser, S. Siddiqui, H. Jagannathan, V. Paruchuri

引用次数: 12

Serially connected monolayer MoS2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography 具有7.5 nm分辨率定向自组装光刻通道的串联单层MoS2 fet

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI: 10.1109/VLSIT.2016.7573376

A. Nourbakhsh, Ahmad Zubair, A. Tavakkoli, R. Sajjad, X. Ling, M. Dresselhaus, J. Kong, K. Berggren, D. Antoniadis, T. Palacios

引用次数: 9