{"title":"基于te的非晶二元OTS器件，具有优异的选择特性，用于x点存储应用","authors":"Y. Koo, K. Baek, H. Hwang","doi":"10.1109/VLSIT.2016.7573389","DOIUrl":null,"url":null,"abstract":"We demonstrated binary Ovonic threshold switching (OTS) materials (ZnTe, GeTe, and SiTe) and the composition dependent electrical properties. Among those materials, amorphous SiTe-film deposited at room-temperature (RT) process showed excellent OTS properties such as high off resistance (~20GΩ at 0.2V), low on resistance (<;1kΩ at 1.2V), high selectivity (~106), extreme SS (<;1mV/dec), fast operating speed (2ns transition after 10ns delay), and good endurance (>500k cycles). In addition, the origin of the electronic switching of the binary OTS device was examined.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications\",\"authors\":\"Y. Koo, K. Baek, H. Hwang\",\"doi\":\"10.1109/VLSIT.2016.7573389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrated binary Ovonic threshold switching (OTS) materials (ZnTe, GeTe, and SiTe) and the composition dependent electrical properties. Among those materials, amorphous SiTe-film deposited at room-temperature (RT) process showed excellent OTS properties such as high off resistance (~20GΩ at 0.2V), low on resistance (<;1kΩ at 1.2V), high selectivity (~106), extreme SS (<;1mV/dec), fast operating speed (2ns transition after 10ns delay), and good endurance (>500k cycles). In addition, the origin of the electronic switching of the binary OTS device was examined.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573389\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications
We demonstrated binary Ovonic threshold switching (OTS) materials (ZnTe, GeTe, and SiTe) and the composition dependent electrical properties. Among those materials, amorphous SiTe-film deposited at room-temperature (RT) process showed excellent OTS properties such as high off resistance (~20GΩ at 0.2V), low on resistance (<;1kΩ at 1.2V), high selectivity (~106), extreme SS (<;1mV/dec), fast operating speed (2ns transition after 10ns delay), and good endurance (>500k cycles). In addition, the origin of the electronic switching of the binary OTS device was examined.
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