C. Lee, H. Kim, P. Jamison, R. Southwick, S. Mochizuki, K. Watanabe, R. Bao, R. Galatage, S. Guillaumet, T. Ando, R. Pandey, A. Konar, B. Lherron, J. Fronheiser, S. Siddiqui, H. Jagannathan, V. Paruchuri
{"title":"选择性清除Si1 - xGex通道上界面层的geox，用于高迁移率Si/Si1 - xGex CMOS应用","authors":"C. Lee, H. Kim, P. Jamison, R. Southwick, S. Mochizuki, K. Watanabe, R. Bao, R. Galatage, S. Guillaumet, T. Ando, R. Pandey, A. Konar, B. Lherron, J. Fronheiser, S. Siddiqui, H. Jagannathan, V. Paruchuri","doi":"10.1109/VLSIT.2016.7573369","DOIUrl":null,"url":null,"abstract":"We demonstrate a technique for selective GeO<sub>x</sub>-scavenging which creates a GeO<sub>x</sub>-free IL on Si<sub>1-x</sub>Ge<sub>x</sub> substrates. This process reduces N<sub>it</sub> by >60% to 2e11 and increases high-field mobility at N<sub>inv</sub>=1e13 cm<sup>-2</sup> by ~1.3× in Si<sub>0.6</sub>Ge<sub>0.4</sub> pFETs with sub-nm EOT.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application\",\"authors\":\"C. Lee, H. Kim, P. Jamison, R. Southwick, S. Mochizuki, K. Watanabe, R. Bao, R. Galatage, S. Guillaumet, T. Ando, R. Pandey, A. Konar, B. Lherron, J. Fronheiser, S. Siddiqui, H. Jagannathan, V. Paruchuri\",\"doi\":\"10.1109/VLSIT.2016.7573369\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a technique for selective GeO<sub>x</sub>-scavenging which creates a GeO<sub>x</sub>-free IL on Si<sub>1-x</sub>Ge<sub>x</sub> substrates. This process reduces N<sub>it</sub> by >60% to 2e11 and increases high-field mobility at N<sub>inv</sub>=1e13 cm<sup>-2</sup> by ~1.3× in Si<sub>0.6</sub>Ge<sub>0.4</sub> pFETs with sub-nm EOT.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573369\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application
We demonstrate a technique for selective GeOx-scavenging which creates a GeOx-free IL on Si1-xGex substrates. This process reduces Nit by >60% to 2e11 and increases high-field mobility at Ninv=1e13 cm-2 by ~1.3× in Si0.6Ge0.4 pFETs with sub-nm EOT.
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