A. Nourbakhsh, Ahmad Zubair, A. Tavakkoli, R. Sajjad, X. Ling, M. Dresselhaus, J. Kong, K. Berggren, D. Antoniadis, T. Palacios
{"title":"Serially connected monolayer MoS2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography","authors":"A. Nourbakhsh, Ahmad Zubair, A. Tavakkoli, R. Sajjad, X. Ling, M. Dresselhaus, J. Kong, K. Berggren, D. Antoniadis, T. Palacios","doi":"10.1109/VLSIT.2016.7573376","DOIUrl":null,"url":null,"abstract":"We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS<sub>2</sub> in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS<sub>2</sub> regions with half-pitch of 7.5 nm. The MoS<sub>2</sub> composite transistor possesses an off-state current of 100 pA/μm and an I<sub>on</sub>/I<sub>off</sub> ratio in excess of 10<sup>5</sup>. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS<sub>2</sub> homojunction has a resistance of 75 Ω.μm while the 2H-MoS<sub>2</sub> exhibits low-field mobility of ~8 cm<sup>2</sup>/V.s and carrier injection velocity of ~10<sup>6</sup> cm/s.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573376","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS2 in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS2 regions with half-pitch of 7.5 nm. The MoS2 composite transistor possesses an off-state current of 100 pA/μm and an Ion/Ioff ratio in excess of 105. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS2 homojunction has a resistance of 75 Ω.μm while the 2H-MoS2 exhibits low-field mobility of ~8 cm2/V.s and carrier injection velocity of ~106 cm/s.