Serially connected monolayer MoS2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

A. Nourbakhsh, Ahmad Zubair, A. Tavakkoli, R. Sajjad, X. Ling, M. Dresselhaus, J. Kong, K. Berggren, D. Antoniadis, T. Palacios
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引用次数: 9

Abstract

We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS2 in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS2 regions with half-pitch of 7.5 nm. The MoS2 composite transistor possesses an off-state current of 100 pA/μm and an Ion/Ioff ratio in excess of 105. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS2 homojunction has a resistance of 75 Ω.μm while the 2H-MoS2 exhibits low-field mobility of ~8 cm2/V.s and carrier injection velocity of ~106 cm/s.
具有7.5 nm分辨率定向自组装光刻通道的串联单层MoS2 fet
我们通过在半间距为7.5 nm的半导体-(2H)和金属相(1T’)MoS2区域的周期链中定向自组装单层MoS2,展示了低于10 nm的晶体管通道长度。MoS2复合晶体管的关断电流为100 pA/μm,离子/关断比超过105。对得到的电流-电压特性建模表明,2H/1T’MoS2同质结的电阻为75 Ω。而2H-MoS2表现出~8 cm2/V的低场迁移率。S,载流子注入速度~106 cm/ S。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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