具有7.5 nm分辨率定向自组装光刻通道的串联单层MoS2 fet

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573376

A. Nourbakhsh, Ahmad Zubair, A. Tavakkoli, R. Sajjad, X. Ling, M. Dresselhaus, J. Kong, K. Berggren, D. Antoniadis, T. Palacios

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引用次数: 9

摘要

我们通过在半间距为7.5 nm的半导体-(2H)和金属相(1T’)MoS2区域的周期链中定向自组装单层MoS2，展示了低于10 nm的晶体管通道长度。MoS2复合晶体管的关断电流为100 pA/μm，离子/关断比超过105。对得到的电流-电压特性建模表明，2H/1T’MoS2同质结的电阻为75 Ω。而2H-MoS2表现出~8 cm2/V的低场迁移率。S，载流子注入速度~106 cm/ S。

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Serially connected monolayer MoS2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS₂ in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS₂ regions with half-pitch of 7.5 nm. The MoS₂ composite transistor possesses an off-state current of 100 pA/μm and an I_on/I_off ratio in excess of 10⁵. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS₂ homojunction has a resistance of 75 Ω.μm while the 2H-MoS₂ exhibits low-field mobility of ~8 cm²/V.s and carrier injection velocity of ~10⁶ cm/s.

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2016 IEEE Symposium on VLSI Technology

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