{"title":"Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications","authors":"Y. Koo, K. Baek, H. Hwang","doi":"10.1109/VLSIT.2016.7573389","DOIUrl":null,"url":null,"abstract":"We demonstrated binary Ovonic threshold switching (OTS) materials (ZnTe, GeTe, and SiTe) and the composition dependent electrical properties. Among those materials, amorphous SiTe-film deposited at room-temperature (RT) process showed excellent OTS properties such as high off resistance (~20GΩ at 0.2V), low on resistance (<;1kΩ at 1.2V), high selectivity (~106), extreme SS (<;1mV/dec), fast operating speed (2ns transition after 10ns delay), and good endurance (>500k cycles). In addition, the origin of the electronic switching of the binary OTS device was examined.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41
Abstract
We demonstrated binary Ovonic threshold switching (OTS) materials (ZnTe, GeTe, and SiTe) and the composition dependent electrical properties. Among those materials, amorphous SiTe-film deposited at room-temperature (RT) process showed excellent OTS properties such as high off resistance (~20GΩ at 0.2V), low on resistance (<;1kΩ at 1.2V), high selectivity (~106), extreme SS (<;1mV/dec), fast operating speed (2ns transition after 10ns delay), and good endurance (>500k cycles). In addition, the origin of the electronic switching of the binary OTS device was examined.