U. Celano, E. Capogreco, Judit Lisoni, A. Arreghini, Bernardette Kunert, W. Guo, G. V. D. Bosch, J. V. Houdt, K. D. Meyer, Arnaud Furnémont, Wilfried Vandervorst
{"title":"Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels","authors":"U. Celano, E. Capogreco, Judit Lisoni, A. Arreghini, Bernardette Kunert, W. Guo, G. V. D. Bosch, J. V. Houdt, K. D. Meyer, Arnaud Furnémont, Wilfried Vandervorst","doi":"10.1109/VLSIT.2016.7573430","DOIUrl":null,"url":null,"abstract":"Nanoscopic details of the conduction in 3D NAND vertical channels are unraveled by a novel slice-and-view tomographic technique, Scalpel SPM. The structural and electrical properties of poly-Si and single crystalline In1-xGaxAs of 45 nm channel diameters are explored/revealed. The impact of the grain boundaries (GBs) in poly-Si and of the material segregation in In1-xGaxAs are shown, thus providing a direct correlation between the channel materials and the electrical performance of the device.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Nanoscopic details of the conduction in 3D NAND vertical channels are unraveled by a novel slice-and-view tomographic technique, Scalpel SPM. The structural and electrical properties of poly-Si and single crystalline In1-xGaxAs of 45 nm channel diameters are explored/revealed. The impact of the grain boundaries (GBs) in poly-Si and of the material segregation in In1-xGaxAs are shown, thus providing a direct correlation between the channel materials and the electrical performance of the device.