Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels

U. Celano, E. Capogreco, Judit Lisoni, A. Arreghini, Bernardette Kunert, W. Guo, G. V. D. Bosch, J. V. Houdt, K. D. Meyer, Arnaud Furnémont, Wilfried Vandervorst
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引用次数: 5

Abstract

Nanoscopic details of the conduction in 3D NAND vertical channels are unraveled by a novel slice-and-view tomographic technique, Scalpel SPM. The structural and electrical properties of poly-Si and single crystalline In1-xGaxAs of 45 nm channel diameters are explored/revealed. The impact of the grain boundaries (GBs) in poly-Si and of the material segregation in In1-xGaxAs are shown, thus providing a direct correlation between the channel materials and the electrical performance of the device.
直接三维观察多晶硅和In1−xGaxAs三维NAND垂直通道的传导
三维NAND垂直通道中传导的纳米级细节通过一种新的切片和视图层析技术Scalpel SPM揭示。揭示了沟道直径为45 nm的多晶硅和单晶In1-xGaxAs的结构和电学性质。显示了多晶硅中的晶界(gb)和In1-xGaxAs中的材料偏析的影响,从而提供了通道材料与器件电性能之间的直接相关性。
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