超尺度近弹道锗纳米线nmosfet的RTN与低频噪声

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573421

Wangran Wu, Heng Wu, M. Si, N. Conrad, Yi Zhao, P. Ye

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引用次数: 10

摘要

在这项工作中，我们首次在超尺度Ge纳米线nmosfet中观察到随机电报噪声(RTN)。全面研究了NW几何形状、通道长度、EOT和通道掺杂对低频噪声的影响。结果表明，超尺度Ge NW nmosfet中具有1/f特性的低频噪声是由迁移率波动引起的。当通道长度从80 nm减小到40 nm时，由于电子的近弹道输运，低频噪声减小。

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RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs

In this work, we present the first observation of random telegraph noise (RTN) in ultra-scaled Ge nanowire (NW) nMOSFETs. The impacts of NW geometry, channel length, EOT, and channel doping on low frequency noise are studied comprehensively. It is confirmed that the low frequency noise with 1/f characteristics is attributed to the mobility fluctuation in ultra-scaled Ge NW nMOSFETs. The low frequency noise decreases when the channel length scales down from 80 nm to 40 nm because of the near-ballistic transport of electrons.

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2016 IEEE Symposium on VLSI Technology

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