C. Lee, H. Kim, P. Jamison, R. Southwick, S. Mochizuki, K. Watanabe, R. Bao, R. Galatage, S. Guillaumet, T. Ando, R. Pandey, A. Konar, B. Lherron, J. Fronheiser, S. Siddiqui, H. Jagannathan, V. Paruchuri
{"title":"Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application","authors":"C. Lee, H. Kim, P. Jamison, R. Southwick, S. Mochizuki, K. Watanabe, R. Bao, R. Galatage, S. Guillaumet, T. Ando, R. Pandey, A. Konar, B. Lherron, J. Fronheiser, S. Siddiqui, H. Jagannathan, V. Paruchuri","doi":"10.1109/VLSIT.2016.7573369","DOIUrl":null,"url":null,"abstract":"We demonstrate a technique for selective GeO<sub>x</sub>-scavenging which creates a GeO<sub>x</sub>-free IL on Si<sub>1-x</sub>Ge<sub>x</sub> substrates. This process reduces N<sub>it</sub> by >60% to 2e11 and increases high-field mobility at N<sub>inv</sub>=1e13 cm<sup>-2</sup> by ~1.3× in Si<sub>0.6</sub>Ge<sub>0.4</sub> pFETs with sub-nm EOT.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
We demonstrate a technique for selective GeOx-scavenging which creates a GeOx-free IL on Si1-xGex substrates. This process reduces Nit by >60% to 2e11 and increases high-field mobility at Ninv=1e13 cm-2 by ~1.3× in Si0.6Ge0.4 pFETs with sub-nm EOT.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
