U. Celano, E. Capogreco, Judit Lisoni, A. Arreghini, Bernardette Kunert, W. Guo, G. V. D. Bosch, J. V. Houdt, K. D. Meyer, Arnaud Furnémont, Wilfried Vandervorst
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Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels
Nanoscopic details of the conduction in 3D NAND vertical channels are unraveled by a novel slice-and-view tomographic technique, Scalpel SPM. The structural and electrical properties of poly-Si and single crystalline In1-xGaxAs of 45 nm channel diameters are explored/revealed. The impact of the grain boundaries (GBs) in poly-Si and of the material segregation in In1-xGaxAs are shown, thus providing a direct correlation between the channel materials and the electrical performance of the device.
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