IEEE Transactions on Nanotechnology最新文献_第4页

On the Importance of the Metal Catalyst Layer to the Performance of CNT-Based Supercapacitor Electrodes 金属催化剂层对碳纳米管超级电容器电极性能的重要性

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-26 DOI: 10.1109/TNANO.2024.3523412

Kingshuk Chatterjee;Vinay Kumar;Prabhat Kumar Agnihotri;Sumit Basu;Nandini Gupta

{"title":"On the Importance of the Metal Catalyst Layer to the Performance of CNT-Based Supercapacitor Electrodes","authors":"Kingshuk Chatterjee;Vinay Kumar;Prabhat Kumar Agnihotri;Sumit Basu;Nandini Gupta","doi":"10.1109/TNANO.2024.3523412","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3523412","url":null,"abstract":"The power and energy densities of a Supercapacitor (SC) is largely dictated by the accessibility of the nano-porous area of the electrode to the electrolyte ions. Carbon nanotubes (CNT) have high electrical conductivity, and more importantly, may be grown into architectures with high surface area. However, this is not easy to achieve in practice. CNT electrodes are fabricated by chemical vapor deposition (CVD), after a metal catalyst layer is coated on a current collector. In this work, the control of the metal catalyst layer, by varying the dip-coating time and CVD process parameters, is shown to be crucial to pore morphology and consequent SC performance. The dip-coating time is adjusted to obtain thin and uniform coating. Further, optimum reduction of the nickel layer with hydrogen is required to produce thin CNTs with adequate inter-tube separation that facilitate ion accessibility within the pores. The height of the CNT forest is also optimized to prevent decrease in specific capacitance due to reduced accessibility. Proper optimization of the process parameters results in a pore morphology conductive to ion diffusion, and simultaneous improvement in energy and power density.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"48-53"},"PeriodicalIF":2.1,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Improvement of the Enhancement-Mode GaN MIS-HEMTs by Fluorine Doping in the Dielectric Gate Stack 介质栅层中氟掺杂对增强模式GaN mishemt的改进

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-25 DOI: 10.1109/TNANO.2024.3522371

Tsung-Ying Yang;Mei-Yan Kuo;Jui-Sheng Wu;Yan-Kui Liang;Rahul Rai;Shivendra K. Rathaur;Edward Yi Chang

{"title":"Improvement of the Enhancement-Mode GaN MIS-HEMTs by Fluorine Doping in the Dielectric Gate Stack","authors":"Tsung-Ying Yang;Mei-Yan Kuo;Jui-Sheng Wu;Yan-Kui Liang;Rahul Rai;Shivendra K. Rathaur;Edward Yi Chang","doi":"10.1109/TNANO.2024.3522371","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3522371","url":null,"abstract":"This study tested fluorine doping on various regions of the ferroelectric charge trap gate stack (FEG stack). Fluorine doping effectively reduces oxygen vacancies in the dielectric layer, thus reducing leakage current and stabilizing charge in the dielectric layer. Moreover, fluorine doping can passivate the dangling bonds at the interface and increase the ability of trapping carriers in the trap layer. The FEG stack comprises a tunnel oxide layer (TL), a charge trap layer (CTL), and a ferroelectric layer (FE). Four types of devices were fabricated: undoped, doping in TL, doping in CTL, and doping in both TL and CTL, to investigate the impact of fluorine doping on the FEG gate stack. Devices doping in TL and CTL demonstrated superior performance, achieving the highest V\u0000th\u0000 of 5.4 V with a retention time of 70.42% after 10, 000 seconds. The off-state and gate leakage tests revealed impressive breakdown voltages of 735 V and 24.55 V, respectively. Furthermore, the device exhibited a high operation voltage of 14.3 V for a 10-year lifetime prediction, enabling a wide operating range.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"42-47"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Nanotechnology Publication Information IEEE纳米技术出版信息汇刊

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-25 DOI: 10.1109/TNANO.2024.3517997

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Enhanced Hydrogen Gas Sensing Performance of Gold Nanoparticle Decorated Nitrogen-Doped ZnO Nanomaterials for Improved Sensitivity and Rapid Response 金纳米粒子修饰氮掺杂ZnO纳米材料的氢气传感性能提高灵敏度和快速响应

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-25 DOI: 10.1109/TNANO.2024.3522368

Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T

{"title":"Enhanced Hydrogen Gas Sensing Performance of Gold Nanoparticle Decorated Nitrogen-Doped ZnO Nanomaterials for Improved Sensitivity and Rapid Response","authors":"Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T","doi":"10.1109/TNANO.2024.3522368","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3522368","url":null,"abstract":"This study investigates the enhancement of hydrogen (H\u00002\u0000) gas sensing in nitrogen-doped Zinc Oxide (ZnO) nanomaterials through the decoration of gold (Au) nanoparticles. ZnO nanoparticles were synthesized via a wet chemical method, doped with nitrogen at 0.5%, 1.0%, and 1.5% concentrations, and decorated with Au nanoparticles. Characterization using X-ray diffraction (XRD) revealed that the ZnO structure remained intact, with the addition of a peak corresponding to Au at 38.19°. Transmission electron microscopy (TEM) confirmed the uniform distribution of spherical Au nanoparticles on the ZnO surfaces. UV-Vis spectroscopy showed an enhanced absorption peak at 532 nm due to surface plasmon resonance. Photoluminescence (PL) spectra indicated reduced emission intensity, suggesting effective charge transfer between ZnO and Au. Gas sensing tests revealed that Au-decorated 1.0 wt. % N exhibited a maximum H\u00002\u0000 gas response of 89% at 200 °C, significantly higher than the 46% response of non-decorated 1.0 wt. % N. Additionally, the Au-decorated N sensors demonstrated a rapid response time of 10 sec and a recovery time of 15 sec. These results highlight the potential of Au-decorated N-doped nanomaterials as highly efficient H\u00002\u0000 gas sensors, combining enhanced sensitivity with fast response kinetics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"27-33"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Reduction of Joule Losses in Memristive Switching Using Optimal Control 利用最优控制降低忆阻开关的焦耳损耗

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-13 DOI: 10.1109/TNANO.2024.3517161

Valeriy A. Slipko;Yuriy V. Pershin

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Polarization Insensitive Graphene Based Tunable Metasurface Terahertz Dual-Band Absorber 偏振不敏感石墨烯基可调谐超表面太赫兹双频吸收器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-11 DOI: 10.1109/TNANO.2024.3515459

Niten Kumar Panda;Sraddhanjali Mohapatra;Sudhakar Sahu

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Automated Force Curve Methods Based Micropipette Force Sensors 基于微管力传感器的自动力曲线方法

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-09 DOI: 10.1109/TNANO.2024.3513981

Huiyao Shi;Si Tang;Jialin Shi;Peng Yu;Tie Yang;Chanmin Su;Lianqing Liu

{"title":"Automated Force Curve Methods Based Micropipette Force Sensors","authors":"Huiyao Shi;Si Tang;Jialin Shi;Peng Yu;Tie Yang;Chanmin Su;Lianqing Liu","doi":"10.1109/TNANO.2024.3513981","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3513981","url":null,"abstract":"Force curve is the most important techniques for accurate measuring the stiffness, adhesion and energy dissipation. However, due to the challenges of probe-cell localization, this type of single-cell analysis tool has become a labor-intensive and time-consuming procedure. Here, we demonstrate an automatic positioning methods based on micropipette for force curves acquisition. The automation covers the detection of cells in label-free images, pre-positioning and automatic focusing of micropipette, as well as automated force curves. This new method discards silicon-based probes used in traditional AFM, and instead utilizing a transparent micropipette with an unobstructed tip as the sensor. This advancement enables accurate localization of the probe tip and cell under an optical microscope. Furthermore, during the probe positioning process, we have implemented a pre-localization method using focused laser projection. This allows for manual adjustment of the probe tip within a range of 70 micrometers, providing precise region of interests (ROI) for automatic tip focusing. Combining with the aforementioned techniques. We also demonstrate the high-precision localization and force curve acquisition of eight fixed cells on a single image. The measurement results indicate that the positioning error will not exceed 3.4 μm. Our work has effectively enhanced the efficiency of cellular mechanical measurements and holds the potential to achieve automated high-throughput single-cell analysis and drug screening.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"224-230"},"PeriodicalIF":2.1,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Iron-Ion Nanoparticles for Smart and Cost-Effective Energy Storage Cell Electrode Integration Using Novel Nano-Sedimentation Method 新型纳米沉积法用于智能和经济高效储能电池电极集成的铁离子纳米颗粒

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-04 DOI: 10.1109/TNANO.2024.3510757

Himanshu Priyadarshi;Ashish Shrivastava;Dhaneshwar Mishra;Kulwant Singh

{"title":"Iron-Ion Nanoparticles for Smart and Cost-Effective Energy Storage Cell Electrode Integration Using Novel Nano-Sedimentation Method","authors":"Himanshu Priyadarshi;Ashish Shrivastava;Dhaneshwar Mishra;Kulwant Singh","doi":"10.1109/TNANO.2024.3510757","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3510757","url":null,"abstract":"In this article, a cost-effective technique for the synthesis of gamma iron oxide nanoparticles has been proposed for intelligent maghemite electrode applications pitched in the context of smart and efficient energy storage solution. A facile process-optimized technique for synthesis of gamma iron oxide nanoparticles has been designed in order to investigate the optimum temperature, doping and pH of the sodium hydroxide. By dint of morphological investigation, it has been established that the samples have high surface area, crystalline structure, and size in the range of fifty to hundred angstrom. The linearity of the magnetization feature coupled with its doping sensitivity points towards its usage for state estimation technology of the energy storage device management. The nano-scaled samples witness an increase of 75%–110% in the direct bandgap in comparison to its bulk existence. This band gap modulation establishes that the conductivity can be improved for electrode application by doping. High surface area for the active material ingredient nano-particles has also been confirmed by BET surface area of up to 75 m\u00002\u0000/g. Thermal analyses of the samples establish the fidelity of the samples’ constitution over a desirably wide temperature range. The cost-effectiveness of gamma-iron oxide batteries will be a crucial factor for faster adoption of indigenous renewable energy storage solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"17-26"},"PeriodicalIF":2.1,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Ultra-High Quality Factor NOMS Device Incorporating Photonic Crystal Cavity for Femto-Gram Sensing 基于光子晶体腔的飞克传感超高质量因数NOMS器件

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-29 DOI: 10.1109/TNANO.2024.3509444

Saurabh Agarwal;Kurmendra;Chandra Prakash;Sumar Kumar Mitra;Amitesh Kumar

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Demonstration of a Ternary Inverter Based on the Novel TDDFET With Dual-Doped Source and Asymmetric Gates 基于新型双掺杂源非对称栅极TDDFET的三元逆变器演示

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-25 DOI: 10.1109/TNANO.2024.3505985

Bin Lu;Hua Qiang;Xiaotao Liu;Dawei Wang;Yan Cui;Zhu Li;Jiale Sun;Hongliang Lu

{"title":"Demonstration of a Ternary Inverter Based on the Novel TDDFET With Dual-Doped Source and Asymmetric Gates","authors":"Bin Lu;Hua Qiang;Xiaotao Liu;Dawei Wang;Yan Cui;Zhu Li;Jiale Sun;Hongliang Lu","doi":"10.1109/TNANO.2024.3505985","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3505985","url":null,"abstract":"In this paper, a novel tunneling-drift-diffusion field-effect transistor (TDDFET) is introduced with dual-doped source and asymmetric gates. In the TDDFET, the current is conducted by two mechanisms, namely the band-to-band tunneling and drift-diffusion, making the device can present an additional state between the on and off states, and very suitable for the ternary logic design. Additionally, a standard ternary inverter (STI) is also implemented based on the TDDFET and studied in detail by the aid of TCAD simulation. It turns out that the supply voltage VDD shows significant influence on the ternary inverter and the optimized value is about 3Vturn/2 in which Vturn is the transition voltage on the transfer curve. The influence of key device parameters are also studied in detail. Compared with other ternary inverters, our designed ternary inverter requiring no any immature material, passive device and multi-valued power supply, is more friendly with the CMOS platform and can make the most of the advantages of the ternary logic.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"59-66"},"PeriodicalIF":2.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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