IEEE Transactions on Nanotechnology最新文献_第4页

Optimizing InGaAs/GaAsSb Staggered Bandgap U-Gate Line TFET With p+-Pocket Implant and Negative Capacitance for Enhanced Performance 优化具有 p+ 凹槽植入和负电容的 InGaAs/GaAsSb 交错带隙 U 栅极线 TFET 以提高性能

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-08-02 DOI: 10.1109/TNANO.2024.3437669

Aadil Anam;S. Intekhab Amin;Dinesh Prasad

{"title":"Optimizing InGaAs/GaAsSb Staggered Bandgap U-Gate Line TFET With p+-Pocket Implant and Negative Capacitance for Enhanced Performance","authors":"Aadil Anam;S. Intekhab Amin;Dinesh Prasad","doi":"10.1109/TNANO.2024.3437669","DOIUrl":"10.1109/TNANO.2024.3437669","url":null,"abstract":"In this noteworthy paper, we present a novel and comprehensive investigation into the optimization of performance parameters for the conventional U-Gate III-V line TFET through TCAD simulation. Our unprecedented threefold optimization strategy encompasses multiple facets, marking a significant contribution to the field. Firstly, in our pursuit of enhancing OFF current performance, we implemented a pioneering approach by employing a highly doped p\u0000+\u0000-pocket, effectively suppressing parasitic corner tunneling and resulting in a remarkable 258.14-fold improvement in OFF current. Secondly, we embark on another unexplored avenue in conventional U-Gate TFET by implementing the negative capacitance (NC) effect into it. The NC implementation leads to substantial improvements in ON current and subthreshold swing (SS), with an impressive 4.176-fold enhancement in I\u0000ON\u0000/I\u0000OFF\u0000 and a 2.151-fold reduction in average subthreshold swing (AVSS) (from 33.26 mV/dec to 15.46 mV/dec) compared to the conventional design. In the third and final stage of our optimization strategy, we efficiently combine the benefits of p\u0000+\u0000-pocket doping and NC implementation. By doing this, we simultaneously enhance the OFF current (improved by 226.91 times), ON current (improved by 1.92 times), I\u0000ON\u0000/I\u0000OFF\u0000 ratio (enhanced by 435.55 times), and AVSS (improved by an outstanding 2.861 times, from 33.48 mV/dec to 11.7 mV/dec), demonstrating the effectiveness of our holistic approach. This comprehensive study sets a new benchmark for U-Gate III-V line TFET optimization, paving the way for advanced applications in low-power digital circuits.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"584-590"},"PeriodicalIF":2.1,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141885149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band-to-Band Tunneling Based Unified RAM (URAM) for Low Power Embedded Applications 用于低功耗嵌入式应用的基于带对带隧道技术的统一 RAM (URAM)

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-31 DOI: 10.1109/TNANO.2024.3436014

Avinash Lahgere;Alok Kumar Kamal;Rishu Kumar

{"title":"Band-to-Band Tunneling Based Unified RAM (URAM) for Low Power Embedded Applications","authors":"Avinash Lahgere;Alok Kumar Kamal;Rishu Kumar","doi":"10.1109/TNANO.2024.3436014","DOIUrl":"10.1109/TNANO.2024.3436014","url":null,"abstract":"In this article, we have reported a tunnel field-effect transistor (TFET) based unified random access memory (T-URAM), integrating nonvolatile memory (NVM) and single transistor (1T) DRAM into a single TFET device. Unlike previously published URAMs, the proposed T-URAM utilizes band-to-band tunneling (BTBT) conduction for programming both NVM and 1T DRAM. This approach offers two main advantages: low supply voltage requirements and disturbance-free NVM operation. Additionally, T-URAM ensures interference-free memory operation through separate gates for NVM and 1T DRAM. Simulations show that T-URAM requires 1.5× to 4.5× less supply voltage compared to existing URAMs. At 358 K, the retention time (RT) of T-URAM in 1T DRAM mode is 500 ms, which is \u0000<inline-formula><tex-math>$sim$</tex-math></inline-formula>\u0000 62.5× and \u0000<inline-formula><tex-math>$sim$</tex-math></inline-formula>\u0000 7.8× higher than the buried n-well bulk FinFET URAM and ITRS prediction, respectively. For NVM mode, the RT at a gate length of 50 nm matches that of previously reported URAMs. The sense margin of T-URAM in 1T DRAM mode at 358 K is about 1.9 \u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000A/\u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000m, which is roughly 7.6× higher than TFT-based URAM. We also propose a 2x2 crossbar memory array implementation using T-URAM. These findings pave the way for designing low-power, multi-purpose embedded memory for future applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"629-635"},"PeriodicalIF":2.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Back-End Calibration Circuit for Reducing Hysteresis and Drift Effects of the Potentiometric RuO2 Dopamine Biosensor 减少电位计 RuO2 多巴胺生物传感器迟滞和漂移效应的后端校准电路

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-30 DOI: 10.1109/TNANO.2024.3435447

Po-Yu Kuo;Ming-Tai Hsu;Jung-Chuan Chou;Chih-Hsien Lai;Yu-Hsun Nien;Po-Hui Yang;Chi-Han Liao;Wei-Shun Chen;Jyun-Ming Huang

{"title":"The Back-End Calibration Circuit for Reducing Hysteresis and Drift Effects of the Potentiometric RuO2 Dopamine Biosensor","authors":"Po-Yu Kuo;Ming-Tai Hsu;Jung-Chuan Chou;Chih-Hsien Lai;Yu-Hsun Nien;Po-Hui Yang;Chi-Han Liao;Wei-Shun Chen;Jyun-Ming Huang","doi":"10.1109/TNANO.2024.3435447","DOIUrl":"10.1109/TNANO.2024.3435447","url":null,"abstract":"Electrochemical biosensors often encounter inaccuracies and unreliability in measurements due to non-ideal effects such as drift and hysteresis. This study presents an innovative back-end calibration circuit specifically designed to mitigate hysteresis and drift effects in potentiometric ruthenium dioxide (RuO\u00002\u0000) dopamine biosensors. The proposed calibration circuit combines analog circuitry with a microcontroller, employing gain-configured inverting amplifiers to individually correct hysteresis effects induced by both low and high dopamine concentrations. Furthermore, an inverse drift signal is applied to counteract overall drift effects, significantly improving the precision of dopamine measurements. The biosensor utilizes a radiofrequency sputtering system to deposit RuO\u00002\u0000 as a sensing membrane. A sequential drop-casting process is employed to add functional layers. Atomic force microscopy is utilized to characterize the surface morphology of the RuO\u00002\u0000 sensing membrane, confirming its uniform pattern and exceptional flatness. Reproducibility and repeatability experiments validate the stability and consistency of the fabricated RuO\u00002\u0000 dopamine biosensor, underscoring its potential for practical applications in the diagnosis of neurological disorders.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"578-583"},"PeriodicalIF":2.1,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range 开发具有宽调谐范围的 GHz 频率 BEOL 负电容铁电振荡器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-18 DOI: 10.1109/TNANO.2024.3430221

Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan

{"title":"Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range","authors":"Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan","doi":"10.1109/TNANO.2024.3430221","DOIUrl":"10.1109/TNANO.2024.3430221","url":null,"abstract":"The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area \u0000<inline-formula><tex-math>$(sim!! 50,{bm{mu}}{{mathbf{m}}^2},text{vs}{rm{.}},sim 40000,{bm{mu}}{{mathbf{m}}^2})$</tex-math></inline-formula>\u0000, while achieving a similar figure of merit \u0000<inline-formula><tex-math>$mathbf{FO}{{mathbf{M}}_2}$</tex-math></inline-formula>\u0000 (reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"591-599"},"PeriodicalIF":2.1,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141745153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ab Initio Modeling of Doped/Undoped ArGNR Sensors for No2 Detection 用于二氧化氮检测的掺杂/未掺杂 ArGNR 传感器的 Ab Initio 建模

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-02 DOI: 10.1109/TNANO.2024.3421334

Kamal Solanki;Swati Verma;Pankaj Kumar Das;P.P. Paltani;Manoj Kumar Majumder

{"title":"Ab Initio Modeling of Doped/Undoped ArGNR Sensors for No2 Detection","authors":"Kamal Solanki;Swati Verma;Pankaj Kumar Das;P.P. Paltani;Manoj Kumar Majumder","doi":"10.1109/TNANO.2024.3421334","DOIUrl":"10.1109/TNANO.2024.3421334","url":null,"abstract":"Elevated levels of nitrogen dioxide (NO\u00002\u0000) pollutants have captured significant attention due to their profound influence on the cardiovascular and respiratory systems; hence, high-performance monitoring systems for pollutants are imperative to safeguard the well-being of individuals. In this regard, a hydrogen-passivated two-probe Armchair Graphene Nanoribbon (ArGNR) gas sensor utilizing a doped/undoped configuration can be considered to mitigate the NO\u00002\u0000 pollutants. Therefore, this research, for the first time, examines the influence of channel length and transport properties on the \u0000<italic>i-v\u0000 behavior of NO\u00002\u0000 pollutants for doped/undoped ArGNR-based sensors. The electronic properties are rigorously examined using the density function theory (DFT) within the linear combination of atomic orbital (LCAO) and semi-empirical computation techniques, leveraging principles derived from non-equilibrium Green's function. In comparison to the undoped ArGNR, the BAs doped ArGNR exhibits superior chemisorption energy of −2.3 eV (with spin effect) and −3.3 eV (without spin effect), coupled with the substantial bandgap variation of −10.22, 36.50% (with spin effect) and 100% (without spin effect), at the \u0000<italic>B\u0000 and \u0000<italic>As\u0000 sites, respectively. In addition, a high quantum transport spectrum of 57% and significant current variations of 95% and 77% at the \u0000<italic>B\u0000 and \u0000<italic>As\u0000 sites, respectively, upon the NO\u00002\u0000 adsorption. These findings suggest that the B-As-doped ArGNR sensor provides a promising solution for susceptible NO\u00002\u0000 detection.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"567-577"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recessed Trench Gate AlGaN/GaN HEMT for pH Monitoring: Design and Sensitivity Evaluation 用于 pH 值监测的凹槽栅 AlGaN/GaN HEMT：设计和灵敏度评估

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-02 DOI: 10.1109/TNANO.2024.3422181

Ritu Poonia;Lava Bhargava;Aasif Mohammad Bhat;C. Periasamy

{"title":"Recessed Trench Gate AlGaN/GaN HEMT for pH Monitoring: Design and Sensitivity Evaluation","authors":"Ritu Poonia;Lava Bhargava;Aasif Mohammad Bhat;C. Periasamy","doi":"10.1109/TNANO.2024.3422181","DOIUrl":"10.1109/TNANO.2024.3422181","url":null,"abstract":"This work proposed a recessed trench gate AlGaN/GaN HEMT for a potential of hydrogen ion (\u0000<inline-formula><tex-math>$rm H^+$</tex-math></inline-formula>\u0000) sensing by eliminating the need for a reference electrode. The proposed device performance has been optimized by simulating the device with the help of the ATLAS device simulation tool, considering the pH model. The sensing surface has been functionalized with APTES to improve the sensor's performance to activate the binding sites. The impact of pH solution on the device characteristic alters the threshold voltage sensitivity, drain current sensitivity, and signal-to-noise ratio. The effect of gate voltage in terms of maximum \u0000<inline-formula><tex-math>$rm g_{m}$</tex-math></inline-formula>\u0000 has also been optimized for the maximum sensitivity of the device to the pH solution. The device linearity has been utilized for \u0000<inline-formula><tex-math>$rm VIP_{3}$</tex-math></inline-formula>\u0000, \u0000<inline-formula><tex-math>$rm IIP_{3}$</tex-math></inline-formula>\u0000, and \u0000<inline-formula><tex-math>$rm IMD_{4}$</tex-math></inline-formula>\u0000. The average threshold voltage sensitivity obtained is 160.56 mV/pH, higher than the Nernstian limit (59 mV/pH), and the current sensitivity obtained is 22.93 mA/mm.pH. The device's reliability has been optimized by addressing sensor output drift across various temperature and humidity conditions. These findings suggest that the proposed structure presents a promising alternative to current ion sensing techniques.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"778-785"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Efficient (>36%) Lead-Free Cs2BiAgI6/CIGS Based Double Perovskite Solar Cell (DPSC) With Dual-Graded Light Absorber Layers for Next Generation Photovoltaic (PV) Technologies 基于双梯度光吸收层的无铅 Cs${}_{2}$ BiAgI$_{6}$/CIGS 双包晶太阳能电池 (DPSC)，用于下一代光伏 (PV) 技术

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-02 DOI: 10.1109/TNANO.2024.3421315

G.P.S. Prashanthi;Umakanta Nanda

{"title":"Highly Efficient (>36%) Lead-Free Cs2BiAgI6/CIGS Based Double Perovskite Solar Cell (DPSC) With Dual-Graded Light Absorber Layers for Next Generation Photovoltaic (PV) Technologies","authors":"G.P.S. Prashanthi;Umakanta Nanda","doi":"10.1109/TNANO.2024.3421315","DOIUrl":"10.1109/TNANO.2024.3421315","url":null,"abstract":"Perovskite solar cells (PSCs) are a novel emerging technology that are the third generation of solar cells, following wafer-based and thin-film-based predecessors. Solar photovoltaic (PV) technology that uses perovskite materials has a significant advantage over conventional solar PV, as it can respond to various light wavelengths and increase the amount of sunlight converted to electricity. In addition, PSCs are flexible, semi-transparent, customizable, lightweight, and have a high power conversion efficiency (PCE). Through the use of dual-graded light absorber/active layers, and double perovskite lead-free material Cs\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000BiAgI\u0000<inline-formula><tex-math>$_{6}$</tex-math></inline-formula>\u0000, this study seeks to increase the efficiency of PSCs. A unique device structure (ITO/ZnO/Double Perovskite Cs\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000BiAgI\u0000<inline-formula><tex-math>$_{6}$</tex-math></inline-formula>\u0000/CIGS/High purity Spiro-OMeTAD/Au) of lead-free double perovskite material-based solar cell has been simulated using the SCAPS-1D one-dimensional solar cell capacitance simulator. The optimized solar cell output parameters achieved in this work include voltage in an open circuit (Voc) of 1.2258 V, current density in a short circuit (Jsc) of 34.292 mA/cm\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000, fill factor (FF) of 85.95\u0000<inline-formula><tex-math>$%$</tex-math></inline-formula>\u0000, and power conversion efficiency (PCE) of 36.13\u0000<inline-formula><tex-math>$%$</tex-math></inline-formula>\u0000, which gets close to the single-junction PSCs' Shockley-Queisser Efficiency (SQ) limit.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"554-561"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor 基于铁电隧道场效应晶体管的信号处理应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-01 DOI: 10.1109/TNANO.2024.3421263

Been Kwak;Daewoong Kwon;Hyunwoo Kim

{"title":"Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor","authors":"Been Kwak;Daewoong Kwon;Hyunwoo Kim","doi":"10.1109/TNANO.2024.3421263","DOIUrl":"10.1109/TNANO.2024.3421263","url":null,"abstract":"This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage (\u0000<italic>V\u0000TH\u0000). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current \u0000<italic>(I\u0000SC\u0000), 2) channel-to-drain currents (\u0000<italic>I\u0000CD\u0000), and 3) \u0000<italic>I\u0000SC\u0000 and \u0000<italic>I\u0000CD\u0000. Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"562-566"},"PeriodicalIF":2.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Core Reversal in Vertically Coupled Vortices: Simulation and Experimental Study 垂直耦合涡流中的核心逆转：模拟与实验研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-28 DOI: 10.1109/TNANO.2024.3420249

Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro

{"title":"Core Reversal in Vertically Coupled Vortices: Simulation and Experimental Study","authors":"Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro","doi":"10.1109/TNANO.2024.3420249","DOIUrl":"10.1109/TNANO.2024.3420249","url":null,"abstract":"This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"549-553"},"PeriodicalIF":2.1,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System 采用氮化镓纳米线 ni-i-n 二极管的高性能紫外机器视觉系统

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-19 DOI: 10.1109/TNANO.2024.3416509

Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou

{"title":"GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System","authors":"Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou","doi":"10.1109/TNANO.2024.3416509","DOIUrl":"10.1109/TNANO.2024.3416509","url":null,"abstract":"Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"529-534"},"PeriodicalIF":2.1,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0