IEEE Transactions on Nanotechnology最新文献_第3页

Reduction of Joule Losses in Memristive Switching Using Optimal Control 利用最优控制降低忆阻开关的焦耳损耗

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-13 DOI: 10.1109/TNANO.2024.3517161

Valeriy A. Slipko;Yuriy V. Pershin

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Polarization Insensitive Graphene Based Tunable Metasurface Terahertz Dual-Band Absorber 偏振不敏感石墨烯基可调谐超表面太赫兹双频吸收器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-11 DOI: 10.1109/TNANO.2024.3515459

Niten Kumar Panda;Sraddhanjali Mohapatra;Sudhakar Sahu

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Iron-Ion Nanoparticles for Smart and Cost-Effective Energy Storage Cell Electrode Integration Using Novel Nano-Sedimentation Method 新型纳米沉积法用于智能和经济高效储能电池电极集成的铁离子纳米颗粒

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-04 DOI: 10.1109/TNANO.2024.3510757

Himanshu Priyadarshi;Ashish Shrivastava;Dhaneshwar Mishra;Kulwant Singh

{"title":"Iron-Ion Nanoparticles for Smart and Cost-Effective Energy Storage Cell Electrode Integration Using Novel Nano-Sedimentation Method","authors":"Himanshu Priyadarshi;Ashish Shrivastava;Dhaneshwar Mishra;Kulwant Singh","doi":"10.1109/TNANO.2024.3510757","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3510757","url":null,"abstract":"In this article, a cost-effective technique for the synthesis of gamma iron oxide nanoparticles has been proposed for intelligent maghemite electrode applications pitched in the context of smart and efficient energy storage solution. A facile process-optimized technique for synthesis of gamma iron oxide nanoparticles has been designed in order to investigate the optimum temperature, doping and pH of the sodium hydroxide. By dint of morphological investigation, it has been established that the samples have high surface area, crystalline structure, and size in the range of fifty to hundred angstrom. The linearity of the magnetization feature coupled with its doping sensitivity points towards its usage for state estimation technology of the energy storage device management. The nano-scaled samples witness an increase of 75%–110% in the direct bandgap in comparison to its bulk existence. This band gap modulation establishes that the conductivity can be improved for electrode application by doping. High surface area for the active material ingredient nano-particles has also been confirmed by BET surface area of up to 75 m\u00002\u0000/g. Thermal analyses of the samples establish the fidelity of the samples’ constitution over a desirably wide temperature range. The cost-effectiveness of gamma-iron oxide batteries will be a crucial factor for faster adoption of indigenous renewable energy storage solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"17-26"},"PeriodicalIF":2.1,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Ultra-High Quality Factor NOMS Device Incorporating Photonic Crystal Cavity for Femto-Gram Sensing 基于光子晶体腔的飞克传感超高质量因数NOMS器件

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-29 DOI: 10.1109/TNANO.2024.3509444

Saurabh Agarwal;Kurmendra;Chandra Prakash;Sumar Kumar Mitra;Amitesh Kumar

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Demonstration of a Ternary Inverter Based on the Novel TDDFET With Dual-Doped Source and Asymmetric Gates

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-25 DOI: 10.1109/TNANO.2024.3505985

Bin Lu;Hua Qiang;Xiaotao Liu;Dawei Wang;Yan Cui;Zhu Li;Jiale Sun;Hongliang Lu

{"title":"Demonstration of a Ternary Inverter Based on the Novel TDDFET With Dual-Doped Source and Asymmetric Gates","authors":"Bin Lu;Hua Qiang;Xiaotao Liu;Dawei Wang;Yan Cui;Zhu Li;Jiale Sun;Hongliang Lu","doi":"10.1109/TNANO.2024.3505985","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3505985","url":null,"abstract":"In this paper, a novel tunneling-drift-diffusion field-effect transistor (TDDFET) is introduced with dual-doped source and asymmetric gates. In the TDDFET, the current is conducted by two mechanisms, namely the band-to-band tunneling and drift-diffusion, making the device can present an additional state between the on and off states, and very suitable for the ternary logic design. Additionally, a standard ternary inverter (STI) is also implemented based on the TDDFET and studied in detail by the aid of TCAD simulation. It turns out that the supply voltage VDD shows significant influence on the ternary inverter and the optimized value is about 3Vturn/2 in which Vturn is the transition voltage on the transfer curve. The influence of key device parameters are also studied in detail. Compared with other ternary inverters, our designed ternary inverter requiring no any immature material, passive device and multi-valued power supply, is more friendly with the CMOS platform and can make the most of the advantages of the ternary logic.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"59-66"},"PeriodicalIF":2.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions 嵌入纳米线共振隧道二极管的随机离散掺杂分析及其物理不可克隆功能的产生

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-22 DOI: 10.1109/TNANO.2024.3504963

Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev

{"title":"Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions","authors":"Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev","doi":"10.1109/TNANO.2024.3504963","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504963","url":null,"abstract":"In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000) variations. Such V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"815-821"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach 互连应用的取代掺杂之字形硫化锗纳米带：DFT-NEGF方法

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-22 DOI: 10.1109/TNANO.2024.3504601

Banti Yadav;Pankaj Srivastava;Varun Sharma

{"title":"Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach","authors":"Banti Yadav;Pankaj Srivastava;Varun Sharma","doi":"10.1109/TNANO.2024.3504601","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504601","url":null,"abstract":"Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the \u0000<inline-formula><tex-math>$mathbf {E-k}$</tex-math></inline-formula>\u0000 diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters \u0000<inline-formula><tex-math>$mathbf {(R_{Q}, L_{K}, C_{Q})}$</tex-math></inline-formula>\u0000. The calculation of the transmission channels \u0000<inline-formula><tex-math>$mathbf {(N_{ch})}$</tex-math></inline-formula>\u0000 against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of \u0000<inline-formula><tex-math>$mathbf {R_{Q}}$</tex-math></inline-formula>\u0000 (6.45 Kohm), \u0000<inline-formula><tex-math>$mathbf {L_{K}}$</tex-math></inline-formula>\u0000 \u0000<inline-formula><tex-math>$mathbf {(6.42nH/mu m)}$</tex-math></inline-formula>\u0000, and \u0000<inline-formula><tex-math>$ mathbf {C_{Q}(6.16pF/cm)}$</tex-math></inline-formula>\u0000 for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"809-814"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Highly Efficient and Controlled Thermomechanical Transfer of Electrospun PVDF Nanofiber on Flexible and Transparent PDMS Substrate 静电纺PVDF纳米纤维在柔性透明PDMS基板上的高效可控热转印

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-12 DOI: 10.1109/TNANO.2024.3496487

Ariba Siddiqui;Mitradip Bhattacharjee

{"title":"Highly Efficient and Controlled Thermomechanical Transfer of Electrospun PVDF Nanofiber on Flexible and Transparent PDMS Substrate","authors":"Ariba Siddiqui;Mitradip Bhattacharjee","doi":"10.1109/TNANO.2024.3496487","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3496487","url":null,"abstract":"The growing interest in sensors and microdevices in different applications has led to the exploration of the most efficient and appropriate synthesis methods for flexible device development. In this direction, nanofibers have gained significant attention. However, in many cases, efficient and controlled transfer of nanofibers plays an important role in various device developments. In this study, thermomechanical i.e., temperature and pressure-induced transfer of poly(vinylidene fluoride) (PVDF) electrospun nanofibers on flexible poly(dimethylsiloxane) (PDMS) substrate has been explored. The average diameter of the transferred nanofibers is 169.78 nm. The d\u000033\u0000 of PVDF nanofibers was 25 pC/N and F(β) was found to be 80.84%. The synthesized nanofibers have effectively been transferred onto a flexible PDMS substrate with more than 92% retention of optical transparency. It is observed that the transfer of the fibers depends on the applied pressure and adhesion between the materials. Further, it was found that fully cured PDMS substrate heated at 120 °C showed better transfer efficiency (12.544%) with higher stability. The use of PVDF nanofibers along with the inherent flexibility and transparency of PDMS, renders the produced substrate highly promising for the development of low-cost, lightweight, and easily constructed flexible sensors. Moreover, the fabricated nanofibrous mat generated a maximum voltage of 2.78 V on continuous tapping.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"786-793"},"PeriodicalIF":2.1,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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DNA-Based Nanonetwork for Abnormality Detection and Localization in the Human Body 基于 DNA 的纳米网络用于人体异常检测和定位

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-11 DOI: 10.1109/TNANO.2024.3495541

Jorge Torres Gómez;Bige Deniz Unluturk;Florian-Lennert Lau;Jennifer Simonjan;Regine Wendt;Stefan Fischer;Falko Dressler

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On Bidirectional Transition Between Threshold and Bipolar Switching in Ag/SiO$_{2}$/ITO Memristors Ag/SiO /ITO记忆电阻器阈值与双极开关双向转换研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-08 DOI: 10.1109/TNANO.2024.3494856

Zidu Li;Moin Diwan;Phil David Börner;Andreas Bablich;Heidemarie Schmidt;Peter Haring Bolívar;Bhaskar Choubey

引用次数: 0