IEEE Transactions on Nanotechnology最新文献_第3页

Research on Photovoltaic Measurement and Electrochemical Impedance Spectroscopy Analysis of Dye-Sensitized Solar Cells With Modification of Photoanodes by TiO2 Nanofibers Composited With Zn2SnO4-SnO2 Under Various Illuminances 用 Zn2SnO4-SnO2 复合 TiO2 纳米纤维修饰光阳极的染料敏化太阳能电池在各种光照条件下的光伏测量和电化学阻抗谱分析研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-09-16 DOI: 10.1109/TNANO.2024.3460869

Yu-Hsun Nien;Yu-Han Huang;Jung-Chuan Chou;Chih-Hsien Lai;Po-Yu Kuo;Po-Hui Yang;Jhih-Wei Zeng;Chia-Wei Wang

{"title":"Research on Photovoltaic Measurement and Electrochemical Impedance Spectroscopy Analysis of Dye-Sensitized Solar Cells With Modification of Photoanodes by TiO2 Nanofibers Composited With Zn2SnO4-SnO2 Under Various Illuminances","authors":"Yu-Hsun Nien;Yu-Han Huang;Jung-Chuan Chou;Chih-Hsien Lai;Po-Yu Kuo;Po-Hui Yang;Jhih-Wei Zeng;Chia-Wei Wang","doi":"10.1109/TNANO.2024.3460869","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3460869","url":null,"abstract":"This study involves the utilization of electrostatic access techniques and the development of ZTO-SnO\u00002\u0000/TiO\u00002\u0000 nanofibers (NFs) in different ratios of 1%, 3%, and 5%. The dye-sensitized solar cells (DSSCs) efficiency was enhanced through the utilization of ZTO-SnO\u00002\u0000 nanofiber composites in photoanodes. According to this study, the 3% ZTO-SnO\u00002\u0000/TiO\u00002\u0000 nanofiber-modified DSSCs conversion efficiency was better than that of other DSSCs at different light intensities. When the light intensity is 100 mW/cm\u00002\u0000, there is a rise in efficiency by 30.91% compared with pure TiO\u00002\u0000. The EIS (Electrochemical Impedance Spectroscopy) usage demonstrated that adding ZTO-SnO\u00002\u0000 efficiently lowered the photoanode's electron transfer impedance. The higher scattering potential and powerful electron transfer capability have been demonstrated to have a positive effect on increasing the JSC of DSSCs using quantum efficiency studies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"684-691"},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Compact and Efficient Transverse Spliced Waveguide Grating Antenna for Integrated Optical Phased Array 用于集成光学相控阵的紧凑高效横向拼接波导光栅天线

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-09-12 DOI: 10.1109/TNANO.2024.3459472

Diksha Maurya;Devendra Chack;G. Vickey

{"title":"Compact and Efficient Transverse Spliced Waveguide Grating Antenna for Integrated Optical Phased Array","authors":"Diksha Maurya;Devendra Chack;G. Vickey","doi":"10.1109/TNANO.2024.3459472","DOIUrl":"10.1109/TNANO.2024.3459472","url":null,"abstract":"Waveguide grating antenna with compact size and high diffraction efficiency remains a significant challenge in beam steering applications for integrated Optical Phased Arrays (OPA). Traditional waveguide grating antennas have large footprints, limiting antenna arrays' density. High diffraction efficiency is essential for effective signal transmission, making it a crucial aspect of antenna design. Optical antennas need higher diffraction efficiency, compact size, and broader field of view to achieve this. The proposed work aims to design a single-etch grating antenna on a silicon-on-insulator (SOI) platform that emits light off-chip. The methodology combines the initial grating antenna designed using Finite-difference time-domain (FDTD) simulations and optimizes it with a genetic algorithm. The proposed design uses a transverse spliced grating, Bragg reflectors, and bottom reflector to achieve an impressive upward diffraction efficiency of nearly 88% operating in C -band centered at 1550 nm. The size of the proposed antenna is 2.8 μm and offers a wide far-field beam width of 38 ° x 136 °. This work enables new advancements in integrated waveguide grating antenna development, with potential applications in free-space optical interconnects and on-chip optical phased arrays.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"665-672"},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reduced Graphene Oxide-Polydimethylsiloxane Based Flexible Dry Electrodes for Electrophysiological Signal Monitoring 基于还原石墨烯氧化物-多二甲基硅氧烷的柔性干电极用于电生理信号监测

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-09-12 DOI: 10.1109/TNANO.2024.3459931

Suraj Baloda;Sashank Krishna Sriram;Sumitra Singh;Navneet Gupta

引用次数: 0

MXene- and Graphene-Assisted THz Metamaterial for Cancer Cells Detection Based on Refractive Index Sensing 基于折射率传感的 MXene 和石墨烯辅助太赫兹超材料用于检测癌细胞

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-09-11 DOI: 10.1109/TNANO.2024.3458427

Muhammad Saqlain;Muhammad Abuzar Baqir;Pankaj Kumar Choudhury

引用次数: 0

A Review of Ising Machines Implemented in Conventional and Emerging Technologies 传统和新兴技术中的伊辛机综述

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-09-10 DOI: 10.1109/TNANO.2024.3457533

Tingting Zhang;Qichao Tao;Bailiang Liu;Andrea Grimaldi;Eleonora Raimondo;Manuel Jiménez;María José Avedillo;Juan Nuñez;Bernabé Linares-Barranco;Teresa Serrano-Gotarredona;Giovanni Finocchio;Jie Han

{"title":"A Review of Ising Machines Implemented in Conventional and Emerging Technologies","authors":"Tingting Zhang;Qichao Tao;Bailiang Liu;Andrea Grimaldi;Eleonora Raimondo;Manuel Jiménez;María José Avedillo;Juan Nuñez;Bernabé Linares-Barranco;Teresa Serrano-Gotarredona;Giovanni Finocchio;Jie Han","doi":"10.1109/TNANO.2024.3457533","DOIUrl":"10.1109/TNANO.2024.3457533","url":null,"abstract":"Ising machines have received growing interest as efficient and hardware-friendly solvers for combinatorial optimization problems (COPs). They search for the absolute or approximate ground states of the Ising model with a proper annealing process. In contrast to Ising machines built with superconductive or optical circuits, complementary metal-oxide-semiconductor (CMOS) Ising machines offer inexpensive fabrication, high scalability, and easy integration with mainstream semiconductor chips. As low-energy and CMOS-compatible emerging technologies, spintronics and phase-transition devices offer functionalities that can enhance the scalability and sampling performance of Ising machines. In this article, we survey various approaches in the process flow for solving COPs using CMOS, hybrid CMOS-spintronic, and phase-transition devices. First, the methods for formulating COPs as Ising problems and embedding Ising formulations to the topology of the Ising machine are reviewed. Then, Ising machines are classified by their underlying operational principles and reviewed from a perspective of hardware implementation. CMOS solutions are advantageous with denser connectivity, whereas hybrid CMOS-spintronic and phase-transition device-based solutions show great potential in energy efficiency and high performance. Finally, the challenges and prospects are discussed for the Ising formulation, embedding process, and implementation of Ising machines.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"704-717"},"PeriodicalIF":2.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatial-SpinDrop: Spatial Dropout-Based Binary Bayesian Neural Network With Spintronics Implementation Spatial-SpinDrop: 利用自旋电子学实现基于空间剔除的二元贝叶斯神经网络

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-09-06 DOI: 10.1109/TNANO.2024.3445455

Soyed Tuhin Ahmed;Kamal Danouchi;Michael Hefenbrock;Guillaume Prenat;Lorena Anghel;Mehdi B. Tahoori

{"title":"Spatial-SpinDrop: Spatial Dropout-Based Binary Bayesian Neural Network With Spintronics Implementation","authors":"Soyed Tuhin Ahmed;Kamal Danouchi;Michael Hefenbrock;Guillaume Prenat;Lorena Anghel;Mehdi B. Tahoori","doi":"10.1109/TNANO.2024.3445455","DOIUrl":"10.1109/TNANO.2024.3445455","url":null,"abstract":"Recently, machine learning systems have gained prominence in real-time, critical decision-making domains, such as autonomous driving and industrial automation. Their implementations should avoid overconfident predictions through uncertainty estimation. Bayesian Neural Networks (BayNNs) are principled methods for estimating predictive uncertainty. However, their computational costs and power consumption hinder their widespread deployment in edge AI. Utilizing Dropout as an approximation of the posterior distribution, binarizing the parameters of BayNNs, and further implementing them in spintronics-based computation-in-memory (CiM) hardware arrays can be a viable solution. However, designing hardware Dropout modules for convolutional neural network (CNN) topologies is challenging and expensive, as they may require numerous Dropout modules and need to use spatial information to drop certain elements. In this paper, we introduce MC-SpatialDropout, a spatial dropout-based approximate BayNNs with spintronics emerging devices. Our method utilizes the inherent stochasticity of spintronics devices for efficient implementation of the spatial dropout module compared to existing implementations. Furthermore, the number of dropout modules per network layer is reduced by a factor of \u0000<inline-formula><tex-math>$9times$</tex-math></inline-formula>\u0000 and energy consumption by a factor of \u0000<inline-formula><tex-math>$300times$</tex-math></inline-formula>\u0000, while still achieving comparable predictive performance and uncertainty estimates compared to related works.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"636-643"},"PeriodicalIF":2.1,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design-Technology Co-Optimization for Stacked Nanosheet Oxide Channel Transistors in Monolithic 3D Integrated Circuit Design 在单片式三维集成电路设计中实现堆叠纳米氧化物通道晶体管的设计-技术协同优化

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-08-21 DOI: 10.1109/TNANO.2024.3447020

Jungyoun Kwak;Gihun Choe;Shimeng Yu

引用次数: 0

Stochastic-Binary Hybrid Spatial Coding Multiplier for Convolutional Neural Network Accelerator 用于卷积神经网络加速器的随机-二进制混合空间编码乘法器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-08-15 DOI: 10.1109/TNANO.2024.3444278

Yakun Zhou;Jiajun Yan;Yizhuo Zhou;Ziyang Shao;Jienan Chen

{"title":"Stochastic-Binary Hybrid Spatial Coding Multiplier for Convolutional Neural Network Accelerator","authors":"Yakun Zhou;Jiajun Yan;Yizhuo Zhou;Ziyang Shao;Jienan Chen","doi":"10.1109/TNANO.2024.3444278","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3444278","url":null,"abstract":"Convolutional neural networks have remarkable performance in artificial intelligence, although at the cost of computationally demanding processes within a single inference. Simultaneously, the underlying chip process is reaching its constraints as Moore's law diminishes. Stochastic computation, as a hardware-friendly and unconventional approach, can alleviate the burden of sophisticated arithmetic at the circuit level. This work presents a novel stochastic computing (SC) multiplier that employs an extension-uniform approach to create bit sequences without relying on logical gates. In addition, we propose a stochastic-binary domain arithmetic method to achieve low-cost hardware implementation and low power dissipation. The 4n-bit widths are partitioned into n 4-bit widths, with the high-precision components executed in the binary domain and the low-precision components executed in the stochastic domain. Additionally, a hardware-compatible circuit for compensating faults is also introduced. The accelerator on cifar10 using stochastic binary hybrid domain spatial coding (SHSC) multiplier achieves better performance than the fixed-point counterpart, with a 33.7% reduction in area and 23% reduction in power.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"600-605"},"PeriodicalIF":2.1,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142084497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Machine Learning-Based Compact Modeling of Silicon Cold Source Field-Effect Transistors 基于机器学习的硅冷源场效应晶体管紧凑建模

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-08-13 DOI: 10.1109/TNANO.2024.3442476

Haoqing Xu;Weizhuo Gan;Shujin Guo;Shengli Zhang;Zhenhua Wu

引用次数: 0

Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing 重塑感应放大器：利用相变材料进行电流和电压传感

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-08-05 DOI: 10.1109/TNANO.2024.3438542

Md Mazharul Islam;Shamiul Alam;Mohammad Adnan Jahangir;Garrett S. Rose;Suman Datta;Vijaykrishnan Narayanan;Sumeet Kumar Gupta;Ahmedullah Aziz

{"title":"Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing","authors":"Md Mazharul Islam;Shamiul Alam;Mohammad Adnan Jahangir;Garrett S. Rose;Suman Datta;Vijaykrishnan Narayanan;Sumeet Kumar Gupta;Ahmedullah Aziz","doi":"10.1109/TNANO.2024.3438542","DOIUrl":"10.1109/TNANO.2024.3438542","url":null,"abstract":"Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we introduce three novel sense amplifier topologies based on phase transition materials (PTM) in addition to the previously proposed one, collectively analyzing all four designs tailored for non-volatile memory applications. We utilize the abrupt switching and volatile hysteretic characteristics of PTMs which enables efficient and fast sensing operation in our proposed SA topologies. We provide comprehensive details of their functionality and assess how process variations impact their performance metrics. Our proposed sense amplifier topologies manifest notable performance enhancement. We achieve a ∼67% reduction in sensing delay and a ∼80% decrease in sensing power for current sensing. For voltage sensing, we achieve a ∼75% reduction in sensing delay and a ∼33% decrease in sensing power. Moreover, the proposed SA topologies exhibit improved variation robustness compared to conventional SAs. We also scrutinize the dependence of transistor mirroring window and PTM transition voltages on several device parameters to determine the optimum operating conditions and stance of tunability for each of the proposed SA topologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"606-614"},"PeriodicalIF":2.1,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141945961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0