IEEE Transactions on Nanotechnology最新文献_第3页

Analytical Modeling and Simulation Investigation of Nanowire Tunnel FET for Potential and Drain Current Evaluation 纳米线隧道场效应管的分析建模与仿真研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-20 DOI: 10.1109/TNANO.2025.3581782

Parveen Kumar;Balwinder Raj;Girish Wadhwa

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Efficient Photodetection via High Aspect Ratio Core-Shell Nanowire Array 高纵横比核壳纳米线阵列的高效光电探测

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-10 DOI: 10.1109/TNANO.2025.3577930

Vishal Kaushik;Swati Rajput;Ashavani Kumar;Mukesh Kumar

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Blue Narrowband Photomultiplication Type Organic Photodetector Using ZnPc as Photon Field Modulation Layer 利用ZnPc作为光子场调制层的蓝色窄带光电倍增型有机光电探测器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-06 DOI: 10.1109/TNANO.2025.3577501

Sampati Rao Sridhar;Medha Joshi;Brijesh Kumar

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Ni-SiO2 Cell-Assisted Thermally Stable Broadband Metamaterial Emitter Ni-SiO2电池辅助热稳定宽带超材料发射极

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-03 DOI: 10.1109/TNANO.2025.3576246

Muhammad Saqlain;Muhammad Abuzar Baqir;Pankaj Kumar Choudhury

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An Intelligent 3D-AFM Scanning Process Based on Online Probe Rotation and Adaptive Speed Strategy 基于在线探针旋转和自适应速度策略的3D-AFM智能扫描过程

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565847

Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu

{"title":"An Intelligent 3D-AFM Scanning Process Based on Online Probe Rotation and Adaptive Speed Strategy","authors":"Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu","doi":"10.1109/TNANO.2025.3565847","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565847","url":null,"abstract":"Atomic Force Microscope (AFM) has remained one of the most prominent morphology tools for examining the microscopic world. However, the 3D-AFM has several disadvantages. First, the physical AFM tip occupies space and may sometimes obstruct the scanning process, creating distorted results, especially for vertical sidewalls. Additionally, the traditional AFM scanning scheme results in sparser data density along steep surfaces. In this work, to alleviate distortion, the AFM probe is allowed to rotate. Moreover, the scanning speed along the fast axis in a scan line has to be adaptive according to terrain variation. Therefore, we aim to develop and implement an intelligent AFM scanning process assisted by the proposed probe rotation decision (PRD) and adaptive speed decision (ASD) modules, enabling the AFM probe to achieve online rotation and variable scan speed. Moreover, methods for online coarse compensation and offline fine compensation are also presented to accurately eliminate tip shifts caused by probe rotation. Finally, some comparison results will be provided to demonstrate the effectiveness of the proposed intelligent scanning process.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"264-276"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144100085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach 基于fdsoi的可重构场效应管：铁电方法

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565720

Donghyeok Lee;Suprem R. Das;Jiseok Kwon;Jiwon Chang

引用次数: 0

Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks 记忆电阻细胞非线性网络中的随机模板和噪声动力学

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565887

Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff

{"title":"Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks","authors":"Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff","doi":"10.1109/TNANO.2025.3565887","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565887","url":null,"abstract":"Noise is a pervasive aspect that impacts various systems and environments, from mobile radio channels to biological systems. Within the framework of complex networks, noise poses significant challenges for functionality and performance. In this paper, we investigate the dynamics of a well-known type of locally-coupled computing networks, Memristor Cellular Nonlinear Networks (M-CNNs), in the presence of noise at their interconnection weights, introducing the concept of stochastic weights. In particular, we analyze the effect of noise originating from the synaptic memristors by incorporating both deterministic and stochastic components into synaptic weights, investigating how device-to-device variability and noise affect network performance. Based on the well-established theory of CNNs, we are extending the stability criteria to incorporate synaptic memristor non-idealities and we provide a theoretical framework to analyze their effect on system's performance. In this work, we employ the physics-based Jülich Aachen Resistive Switching Tools (JART) model to study Valence Change Memory (VCM) devices as synapses within our theoretical framework. We investigate the impact of device variability and noise, utilizing statistical properties derived from experimental data reported in the literature. We demonstrate the efficacy of noisy M-CNNs in performing the edge detection task, an example of fundamental image processing applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"282-292"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-29 DOI: 10.1109/TNANO.2025.3565276

Amit Verma;Reza Nekovei;Daryoush Shiri

引用次数: 0

A Novel Underlay Metal Strip Loaded Doping-Less Heterojunction (GaSb/Si) TFET Biosensor for Autoimmune Disease Detection 一种用于自身免疫性疾病检测的新型衬底金属条负载无掺杂异质结（GaSb/Si） TFET生物传感器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-17 DOI: 10.1109/TNANO.2025.3561947

Madhulika Verma;Sachin Agrawal

{"title":"A Novel Underlay Metal Strip Loaded Doping-Less Heterojunction (GaSb/Si) TFET Biosensor for Autoimmune Disease Detection","authors":"Madhulika Verma;Sachin Agrawal","doi":"10.1109/TNANO.2025.3561947","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3561947","url":null,"abstract":"In human being autoimmune diseases are caused by the immune system's attack on body tissues. Therefore, advanced diagnostic tools for their early and accurate detection is highly needed. This study introduces a new underlay metal strip loaded doping-less heterojunction (GaSb/Si) TFET biosensor (UMS-DL-HJ-TFETB) device with exceptional sensitivity and performance. Key design features include an underlay metal strip for improved tunnelling and the cavities are on the source region to achieve a peak drain current sensitivity of 6.7 × 10<inline-formula><tex-math>$^{10}$</tex-math></inline-formula> at k = 12 and V<inline-formula><tex-math>$_{gs}$</tex-math></inline-formula> = 0.45 V. With a cut-off frequency of 3.27 × 10<inline-formula><tex-math>$^{8}$</tex-math></inline-formula> Hz and a response time of 496 ps, the proposed biosensor exhibits excellent RF performance. The device performance in detecting DNA charge densities ranging from <inline-formula><tex-math>$pm$</tex-math></inline-formula>1 × 10<inline-formula><tex-math>$^{11}$</tex-math></inline-formula> cm<inline-formula><tex-math>$^{-2}$</tex-math></inline-formula> to <inline-formula><tex-math>$pm$</tex-math></inline-formula>1 × 10<inline-formula><tex-math>$^{12}$</tex-math></inline-formula> cm<inline-formula><tex-math>$^{-2}$</tex-math></inline-formula> has also been studied. In addition, five non-uniform distributions which is caused by the steric hindrance effect have been optimized. A comparative analysis is also done for fair evaluation. The simulation results show that the proposed biosensor addresses the limitations of conventional methods, providing high sensitivity, rapid detection and reliable diagnostic accuracy for autoimmune diseases.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"239-248"},"PeriodicalIF":2.1,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vector-Matrix Multiplier Architecture for In-Memory Computing Applications With RRAM Arrays 基于RRAM阵列的内存计算应用的向量矩阵乘法器架构

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-15 DOI: 10.1109/TNANO.2025.3560912

Bipul Boro;Rushik Parmar;Gaurav Trivedi

{"title":"Vector-Matrix Multiplier Architecture for In-Memory Computing Applications With RRAM Arrays","authors":"Bipul Boro;Rushik Parmar;Gaurav Trivedi","doi":"10.1109/TNANO.2025.3560912","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3560912","url":null,"abstract":"Artificial Intelligence (AI) has advanced to the stage where modern problems can be transformed into AI problems with computational costs. Increased complexity has exponentially raised computation and inference demands, primarily due to Von Neumann architecture limitations. In-memory computing (IMC) revolutionizes this paradigm by eliminating memory read-write overheads. Notably, the utilization of Resistive Random Access Memory (RRAM) in vector-matrix multiplication (VMM) configurations within IMC architectures has demonstrated substantial performance enhancements. In the proposed work, utilizing Digital-to-Time Converters (DTCs) and Time-to-Digital Converters (TDCs) optimizes hardware resources substantially within in-memory computing (IMC) architectures. Our proposed DTC and TDC blocks exhibit power consumptions of <inline-formula><tex-math>$41 mu text{W}$</tex-math></inline-formula> and <inline-formula><tex-math>$38 mu text{W}$</tex-math></inline-formula> and delays of <inline-formula><tex-math>$896 text{ps}$</tex-math></inline-formula> and <inline-formula><tex-math>$530 text{ps}$</tex-math></inline-formula>. Additionally, we introduce a <inline-formula><tex-math>$4T-1R$</tex-math></inline-formula> structure with Reset Stop Block (RSB) that facilitates 2-bit RRAM reprogramming and entails a latency of <inline-formula><tex-math>$1.07 mu text{s}$</tex-math></inline-formula> and energy/cell of <inline-formula><tex-math>$0.11 text{pJ}$</tex-math></inline-formula>. The overall energy efficiency of Time-Domain VMM (TDVMM) architecture is <inline-formula><tex-math>$866.6 text{Tops/W}$</tex-math></inline-formula>, which is <inline-formula><tex-math>$1.61 times$</tex-math></inline-formula> more efficient than contemporary TDVMMs. Furthermore, our design consistently performs with a cycle-to-cycle variability of 23%, showcasing its tolerance to variations.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"249-259"},"PeriodicalIF":2.1,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0