IEEE Transactions on Nanotechnology最新文献_第3页

Defect-Based Stability, Reliability, and Performance of Multiple Quantum Well Sb2S3 Photovoltaic Devices With Nanosphere CdS Buffer Layer 基于缺陷的纳米球CdS缓冲层Sb2S3多量子阱器件的稳定性、可靠性和性能

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-07-29 DOI: 10.1109/TNANO.2026.3718357

Meenakshi Sundereswaran U;Jaisha J;Janani J;Soumyaranjan Routray

{"title":"Defect-Based Stability, Reliability, and Performance of Multiple Quantum Well Sb2S3 Photovoltaic Devices With Nanosphere CdS Buffer Layer","authors":"Meenakshi Sundereswaran U;Jaisha J;Janani J;Soumyaranjan Routray","doi":"10.1109/TNANO.2026.3718357","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3718357","url":null,"abstract":"Sb2(S,Se)3 is an earth-abundant direct gap, p-type semiconducting material with a well-known quantum confinement property at the nanoscale. Also, CdS is a widely used n-type direct band gap buffer layer material in the photovoltaic (PV) devices. Yet, there are limited studies on nanorod Sb2S3 absorber-layered Sb2Se3 multiple quantum well (MQW) PV devices with a nanosphere CdS buffer layer. In this work, nanosphere CdS and nanorod Sb2S3 thin film layers are fabricated by the chemical bath deposition technique. The Sb2S3 and CdS thin film crystalline phases, morphological features induced p-type and n-type mobility, range of absorption, elemental purity and composition, and shallow defect dispersion ratio with respect to energy band gap are obtained. The obtained material properties are incorporated into a TCAD-based simulation to design a nanorod Sb2S3 multiple quantum well (MQW) PV device. A peak simulated efficiency of around 24.16% is predicted to be obtained at optimal conditions. The spectral sensitivity across the solar spectrum and the shallow defect dispersion sensitivity and deep defect sensitivity’s impact on the performance, stability, and reliability of the MQW PV device are assessed. The electric field, I-V characteristics, and recombination rate are inspected to comprehend the thermionic and tunneling-assisted charge collection mechanism.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"295-305"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148781336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Switching Dynamics of Multidomain Ferroelectric Devices 多畴铁电器件的开关动力学

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-09-15 DOI: 10.1109/TNANO.2026.3734222

Golam Mahmud Samdani;Ankit Shukla;Shaloo Rakheja

{"title":"Switching Dynamics of Multidomain Ferroelectric Devices","authors":"Golam Mahmud Samdani;Ankit Shukla;Shaloo Rakheja","doi":"10.1109/TNANO.2026.3734222","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3734222","url":null,"abstract":"This work presents a comprehensive modeling framework for ferroelectric (FE) devices that can be integrated into hierarchical circuit simulators, enabling technology-device-circuit co-design. The framework employs an enhanced nucleation limited switching (NLS) model with updated Merz law and incubation time formulations to accurately capture the polarization dynamics under arbitrary voltage excitations and cumulative stimulation. The model is validated against measured data from fabricated HZO capacitors (FECaps), ferroelectric tunnel junctions (FTJs), and ferroelectric FETs (FeFETs). The switching time and the temperature sensitivity of FECap is explored. FTJ device readout is modeled through a self-consistent module that solves the Poisson equation, charge balance, tunneling transport, and drift-diffusion currents. FeFET device framework is modeled through enforcing electrostatic charge-continuity conditions at the gate stack interface with standard BSIM-CMG FinFET model. Utilizing its predictive capability, we explore the influence of technology parameters, including FE thickness, remanent polarization, effective mass, semiconductor doping, and program/erase voltages, on key FTJ and FeFET performance metrics such as on/off current, tunneling electroresistance (TER), and memory window behavior. The resulting Verilog-A–compatible framework provides a unified platform for analyzing and optimizing FE-based devices including FECAPs, FTJs, and FeFETs within emerging heterogeneous computing architectures.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"350-357"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a Non-Enzymatic Potentiometric and Voltammetric Lactate Sensor Enhanced by ZnO/Co3O4/MB/SnO2 on Flexible Printed Circuit Board 柔性印刷电路板上ZnO/Co3O4/MB/SnO2增强非酶促电位伏安乳酸传感器的研制

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-04-22 DOI: 10.1109/TNANO.2026.3686637

Yu-Hsun Nien;Xin-Han Chen;Jung-Chuan Chou;Chih-Hsien Lai;Po-Yu Kuo;Po-Hui Yang;Yu-Wei Chen;Lian-Sheng Jiang

{"title":"Development of a Non-Enzymatic Potentiometric and Voltammetric Lactate Sensor Enhanced by ZnO/Co3O4/MB/SnO2 on Flexible Printed Circuit Board","authors":"Yu-Hsun Nien;Xin-Han Chen;Jung-Chuan Chou;Chih-Hsien Lai;Po-Yu Kuo;Po-Hui Yang;Yu-Wei Chen;Lian-Sheng Jiang","doi":"10.1109/TNANO.2026.3686637","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3686637","url":null,"abstract":"A non-enzymatic lactate sensor is successfully developed by integrating ZnO/Co3O4/methylene blue (MB)/SnO2 composite onto flexible printed circuit board (FPCB). ZnO provides a wide bandgap and surface area for adsorption, Co3O4 contributes p-type semiconducting behavior to promote charge separation, and MB serves as an effective redox mediator to accelerate electron transfer. Therefore, these materials form a highlyx responsive and stable sensing interface suitable for both the potentiometric and voltammetric detection modes. The sensor demonstrates good selectivity against common interfering biomolecules typically found in physiological fluids, ensuring reliable lactate detection in complex environments. In addition, the device remains consistent performance over an extended operational lifespan, confirming its mechanical and electrochemical stability for long-term use. The lactate sensor demonstrates a broad linear detection range (0.01–100 mM), with a high sensitivity of 21.9 μA/decade and excellent linearity (R2 = 0.999), highlighting its strong potential for accurate and reliable lactate monitoring across a broad concentration spectrum.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"163-171"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147828836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a Novel Si 0.5Ge0.5 Based Dual-Source Vertical Line TFET With Negative Capacitance for Enhanced Sub-Threshold Performance 基于Si 0.5Ge0.5的新型负电容双源垂直线TFET的亚阈值性能设计

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-08-24 DOI: 10.1109/TNANO.2026.3726794

Nuzhat Yousf;S Intekhab Amin;Shazia Parween;Zuber Rasool;Aadil Anam

{"title":"Design of a Novel Si 0.5Ge0.5 Based Dual-Source Vertical Line TFET With Negative Capacitance for Enhanced Sub-Threshold Performance","authors":"Nuzhat Yousf;S Intekhab Amin;Shazia Parween;Zuber Rasool;Aadil Anam","doi":"10.1109/TNANO.2026.3726794","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3726794","url":null,"abstract":"In this paper, we propose a Novel Si0.5Ge0.5 Dual Source Vertical Line Tunnel Field Effect Transistor (DS-VLTFET) configuration. In the proposed structure, the steep subthreshold slope characteristics are achieved by optimizing the various design parameters such as the work function (<italic>ϕm), channel gap region (Ch-gap), gate source overlap (Lo), and Ge mole fraction. The minimum subthreshold swing (SS) achieved by proposed line TFET is 48.71 mV/decade. Furthermore, NC benefits are leveraged by implementing it on the proposed TFET. This significantly improved the device characteristics i.e., Ioff in the order of 10−16-10−15, Ion/Ioff equal to 7.02 × 109 with minimum achieved SS of 14.9 mV/decade. The implementation of ferroelectric layer of varying thickness (tfe) in the gate stack significantly increases the gate normal line tunneling from the two Source regions in the channel which significantly improves the SS. Therefore, this design is suitable for future low power applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"306-311"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148925302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene-Vanadium Based 2-bit RIS Beam Scanner Circular Polarization Conversion for 6G Applications 6G应用中基于石墨烯-钒的2位RIS波束扫描仪圆偏振转换

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-08-26 DOI: 10.1109/TNANO.2026.3727755

Hassan Zakeri;Gholamreza Moradi;Ahad Tavakoli

{"title":"Graphene-Vanadium Based 2-bit RIS Beam Scanner Circular Polarization Conversion for 6G Applications","authors":"Hassan Zakeri;Gholamreza Moradi;Ahad Tavakoli","doi":"10.1109/TNANO.2026.3727755","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3727755","url":null,"abstract":"In this paper, a circularly polarized reconfigurable intelligent reflective surface (CP-GVRIS) based on graphene and vanadium dioxide (<inline-formula><tex-math>$mathrm{VO_{2}}$</tex-math></inline-formula>) is introduced for terahertz (THz) beam manipulation. This design incorporates graphene and <inline-formula><tex-math>$mathrm{VO_{2}}$</tex-math></inline-formula> into a 2-bit coding metasurface, enabling active phase control and circular polarization conversion. The CP-GVRIS comprises a 45 × 45 array of unit cells featuring gold, graphene, and <inline-formula><tex-math>$mathrm{VO_{2}}$</tex-math></inline-formula> patches on <inline-formula><tex-math>$mathrm{SiO_{2}}$</tex-math></inline-formula> and <inline-formula><tex-math>$mathrm{VO_{2}}$</tex-math></inline-formula> substrates, operating across the 500-600 GHz frequency range. The CP-GVRIS achieves four stable phase states with approximately 90<inline-formula><tex-math>$^circ$</tex-math></inline-formula> phase separation and maintains a reflection magnitude exceeding 0.85. Dynamic phase reconfigurability is achieved by modulating the graphene chemical potential and <inline-formula><tex-math>$mathrm{VO_{2}}$</tex-math></inline-formula> temperature, enabling efficient polarization conversion without compromising reflection efficiency. Simulations confirm single-beam radiation and wide-angle beam scanning up to <inline-formula><tex-math>$pm 60^circ$</tex-math></inline-formula> with minimal scan loss. At 550 GHz, the CP-GVRIS demonstrates a maximum broadside gain of 25.1 dBi and a gain enhancement of 12.5 dBi compared to the feed horn antenna. These findings suggest that the CP-GVRIS is a promising component for THz beam manipulation in future sixth-generation (6 G) wireless systems.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"312-319"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148925377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magneto-Mechanical Reservoir Computing Combining a Two-Dimensional Network of Nonlinear Mass-Spring Resonators With Magnetic Tunnel Junctions 结合具有磁隧道结的非线性质量-弹簧谐振器二维网络的磁-机械储层计算

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-04-29 DOI: 10.1109/TNANO.2026.3688953

A. Grimaldi;D. R. Rodrigues;A. Meo;F. Garescì;G. Finocchio

{"title":"Magneto-Mechanical Reservoir Computing Combining a Two-Dimensional Network of Nonlinear Mass-Spring Resonators With Magnetic Tunnel Junctions","authors":"A. Grimaldi;D. R. Rodrigues;A. Meo;F. Garescì;G. Finocchio","doi":"10.1109/TNANO.2026.3688953","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3688953","url":null,"abstract":"Coupled networks of mass–spring resonators have attracted growing attention across multiple fundamental and applied research directions, including reservoir computing for artificial intelligence. This has led to the exploration of platforms capable of tasks such as acoustic-wave classification, smart sensing, predictive maintenance, and adaptive vibration control. This work introduces a multiphysics reservoir based on a two-dimensional network of coupled nonlinear mass-spring resonators. Each mass has a magnetic tunnel junction on top of it, working as spin diode, used as a spintronic read-out. As a proof-of-concept, we have benchmarked this reservoir with the task of vowel-recognition reaching accuracy above 95%. Because the device accepts elastic excitations directly, signal injections are simplified, making it well suited for real-time sensing and edge computation. We also studied the effect of nonlinearity, demonstrating how it influences the reservoir dynamics, and assessed its robustness under node-to-node variation of the elastic constants.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"180-187"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148508115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Efficient Short-Aware Error-Correcting Method for Improving the Reliability of STT-MRAM 一种提高STT-MRAM可靠性的有效短感知纠错方法

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-07-20 DOI: 10.1109/TNANO.2026.3714902

Yaxing Zhou;Pengqi Lu;Zhengren Yan;Ao Shen;Xiaopeng Jiao;Jie Zhang;Hao Cai;Shikun He

{"title":"An Efficient Short-Aware Error-Correcting Method for Improving the Reliability of STT-MRAM","authors":"Yaxing Zhou;Pengqi Lu;Zhengren Yan;Ao Shen;Xiaopeng Jiao;Jie Zhang;Hao Cai;Shikun He","doi":"10.1109/TNANO.2026.3714902","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3714902","url":null,"abstract":"Short bit errors constitute a primary limitation to the endurance of Spin-Transfer Torque Magnetoresistive Random-Access Memory (STT-MRAM). To address this challenge, we propose a novel short-aware error correction method employing <inline-formula><tex-math>$Z$</tex-math></inline-formula>-error correction and (<inline-formula><tex-math>$Z+1$</tex-math></inline-formula>)-error detection error correction coding (ECC). This approach achieves enhanced error correction capability for (<inline-formula><tex-math>$Z+1$</tex-math></inline-formula>) errors. We validate the method through demonstration of triple-error correction using dual-parallel double-error correction and triple-error detection (DEC-TED) code blocks. Comparative analysis with conventional ECC reveals that the proposed method improves short-bit error rate correction capabilities by at least an order of magnitude. Furthermore, it achieves substantial hardware efficiency improvements, demonstrating typical 4–12% area reduction and 46% latency reduction compared to conventional ECC implementations with equivalent error correction capabilities.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"259-265"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bridging the AC Non-Equilibrium Green’s Function Formalism and Transmission Line Models for the Analysis of Nanointerconnects 桥接交流非平衡格林函数形式和传输线模型用于纳米互连分析

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-02-27 DOI: 10.1109/TNANO.2026.3668364

Emile Vanderstraeten;Dries Vande Ginste

{"title":"Bridging the AC Non-Equilibrium Green’s Function Formalism and Transmission Line Models for the Analysis of Nanointerconnects","authors":"Emile Vanderstraeten;Dries Vande Ginste","doi":"10.1109/TNANO.2026.3668364","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3668364","url":null,"abstract":"The unfavorable scaling of Cu interconnects at nanoscale dimensions has prompted the search for alternative materials. To model electron transport in these novel nanointerconnects, both steady-state non-equilibrium Green’s function (NEGF) techniques and transmission line (TL) models have been employed. While steady-state NEGF enables a first-principles analysis of the transmission through realistic nanostructures, it cannot capture time-dependent behavior. TL models, on the other hand, offer insight into the dynamical properties of nanointerconnects but have been derived for idealized systems and require external input to approximately account for imperfections. Furthermore, they are based on a linear approximation of the bandstructure and cannot deal with nonlinear phenomena. Recently, an AC NEGF technique was introduced that addresses these issues by specifically targeting time-dependent phenomena under a periodic bias. In this work, we analytically demonstrate that, under appropriate assumptions, the linear TL model for nanowires emerges directly from the AC NEGF equations. The derivation naturally yields the correct boundary conditions, establishing AC NEGF as a robust and versatile framework for the modeling of next-generation nanointerconnects.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"82-91"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147557558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sensitivity Improvement in AlGaN/GaN HEMT for Cadmium Ion Detection Using Step Graded Barrier and Back Barrier Techniques 利用阶跃梯度势垒和后势垒技术提高AlGaN/GaN HEMT检测镉离子的灵敏度

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-07-01 DOI: 10.1109/TNANO.2026.3708906

Ramanand A C;C. Periasamy;Anup Vasavan;Gaurav Siddharth

引用次数: 0

Photonic Crystal Fiber Temperature Sensor Based on Surface Plasmon Resonance 基于表面等离子体共振的光子晶体光纤温度传感器

IF 2.5 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-06-16 DOI: 10.1109/TNANO.2026.3704309

Cong Hu;Xiaotong Zhang;Tian Zhou;Aijun Zhu;Lijuan Zhang;Xijun Huang

{"title":"Photonic Crystal Fiber Temperature Sensor Based on Surface Plasmon Resonance","authors":"Cong Hu;Xiaotong Zhang;Tian Zhou;Aijun Zhu;Lijuan Zhang;Xijun Huang","doi":"10.1109/TNANO.2026.3704309","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3704309","url":null,"abstract":"This article designs a surface plasmon resonance (SPR) based D-type photonic crystal fiber (PCF) temperature sensor with excellent sensitivity and high figure of merit (FOM). Elliptical air holes are intended to significantly increase the sensor's sensitivity. The fiber core is made up of two layers of air holes of various sizes organized in a pentagonal pattern. applying gold film to the polished PCF surface as a plasmonic material. A thermosensitive liquid is created by combining ethanol and chloroform. Use finite element methods to study sensor performance with greater precision and more application. Our findings demonstrate that the temperature sensor is able to detect temperatures over a range of −20 to 70 °C, exhibiting a maximum sensitivity of 11.6 nm°C−1 and a peak FOM of 0.4 °C−1. To the best of our knowledge, the realized sensing performance is substantially superior to that of existing PCF temperature sensors. In addition, the polynomial fitting R2 is as high as 0.99714. The proposed sensor exhibits excellent performance in terms of temperature detection range, sensitivity, FOM, and can be applied to relevant fields including biomedicine, environmental monitoring, and temperature sensing.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"223-233"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148512602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0