IEEE Transactions on Nanotechnology最新文献_第2页

MOF-Functionalized 455 nm Laser-Induced Graphene Flexible Electrode for Electrochemical Sensing 用于电化学传感的mof功能化455nm激光诱导石墨烯柔性电极

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-03-09 DOI: 10.1109/TNANO.2026.3671713

S. M. Ali Emam;Syeda Maliha Reza;Mayukh Mallick;Mahabub Alam Bhuiyan;Taslim Ur Rashid;Saeed Mahmud Ullah;Ahsan Habib

{"title":"MOF-Functionalized 455 nm Laser-Induced Graphene Flexible Electrode for Electrochemical Sensing","authors":"S. M. Ali Emam;Syeda Maliha Reza;Mayukh Mallick;Mahabub Alam Bhuiyan;Taslim Ur Rashid;Saeed Mahmud Ullah;Ahsan Habib","doi":"10.1109/TNANO.2026.3671713","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3671713","url":null,"abstract":"Electrochemical biosensors require electrode materials that are scalable, affordable, and effective for detecting target analyte. Laser-induced graphene (LIG) has emerged as a promising electrode material, yet traditional fabrication methods using expensive CO<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> lasers limit accessibility. In this work, we report a low-cost and scalable fabrication strategy for flexible LIG electrodes using direct laser writing with a 10W, 455 nm diode laser. While bare LIG offers excellent conductivity and porosity, it lacks specific binding sites for target molecules, resulting in limited sensitivity. Surface functionalization with metal–organic frameworks (MOFs) offers a pathway to overcome this limitation; however, most MOF–LIG hybrids have been applied to gas sensing, leaving liquid-phase analyte detection largely unexplored. To improve sensor’s performance, MIL-100 MOF was incorporated onto the LIG electrodes via a simple drop-casting process. As a proof-of-concept, Ciprofloxacin detection was demonstrated with a detection limit of 6.04 nM. These findings establish MOF functionalized LIG electrodes as a versatile, low-cost, and scalable platform for sensitive solution-phase electrochemical sensing in environmental and biomedical applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"92-98"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147557661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric Properties of Functional Nanofluids Based on Ni, Cu, and Ag Nanoparticles Deposited in Liquid Polymers 基于Ni， Cu和Ag纳米颗粒沉积在液体聚合物中的功能纳米流体的介电性能

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-03-19 DOI: 10.1109/TNANO.2026.3675650

Oleksandr Boiko;Kateryna Biliak;Alexander Vahl;Daniil Nikitin

{"title":"Dielectric Properties of Functional Nanofluids Based on Ni, Cu, and Ag Nanoparticles Deposited in Liquid Polymers","authors":"Oleksandr Boiko;Kateryna Biliak;Alexander Vahl;Daniil Nikitin","doi":"10.1109/TNANO.2026.3675650","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3675650","url":null,"abstract":"This article presents an analysis of the AC dielectric properties of functional nanofluids (NFs). The structure of the samples consists of base fluids (BF), including polyethylene glycol (PEG), silicone oil (SO), propylene carbonate (PC) and hydroxyethyl methacrylate (HEMA), as well as nanofillers such as nickel, copper and silver nanoparticles (NPs), with a mean size of 17-51 nm and concentrations 200-2000 µg/ml. The NFs were produced using both a one-step and a two-step methods. The experimental section includes SEM investigation, electrical characterization of PEG-based NFs, and determination of the impact on the NF’s conductivity of NPs type, concentration and size. Impedance, phase shift angle, loss factor, capacitance, real and imaginary permittivity, and conductivity were measured for frequencies of 4 Hz-8 MHz at room temperature (RT). The entire frequency range was divided into two energy regions: capacitive and quasi-resistive. For each sample, a resonant frequency <italic>fR was identified, below which interfacial polarization occurs at nanoparticle and electrical contact boundaries, while above it atomic polarization dominates due to the stronger AC field effect on nanoparticle electron clouds. The conductivity is significantly impacted by the NP’s type and concentration. No clear effect of NP size on NF conductivity was observed.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"99-106"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mode Sensitive Topological Interface State Dual-Mode Absorber in Hyperbolic Metamaterials Based One-Dimensional Photonic Crystals With Graphene and Gold Layers 基于石墨烯和金层双曲超材料的一维光子晶体中模式敏感拓扑界面态双模吸收体

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-03-30 DOI: 10.1109/TNANO.2026.3678724

Gulzar Ali J;Sanjay Kumar Mohanty;Chittaranjan Nayak

{"title":"Mode Sensitive Topological Interface State Dual-Mode Absorber in Hyperbolic Metamaterials Based One-Dimensional Photonic Crystals With Graphene and Gold Layers","authors":"Gulzar Ali J;Sanjay Kumar Mohanty;Chittaranjan Nayak","doi":"10.1109/TNANO.2026.3678724","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3678724","url":null,"abstract":"Dual resonance absorption modes realized by a graphene in one-dimensional photonic crystal heterostructure of all-hyperbolic metamaterial (HMM)-based unit cells terminated with a gold-dielectric bilayer is examined. Resonance frequencies exhibit a distinct angular dependence: they shift upward under transverse electric (TE) polarization and downward under transverse magnetic (TM) polarization as the incidence angle increases from normal incidence up to <inline-formula><tex-math>$89^{circ }$</tex-math></inline-formula>. This angular response appears almost linear in both TE and TM modes, as visualized through contour plots. The effect is primarily demonstrated in the terahertz (THz) regime using Indium Phosphide (InP) and Tellurium (Te) as the constituent materials of the HMM, which exhibit metallic behavior within this frequency range. The same phenomenon is further verified separately with Indium Antimonide (InSb)/Te and Gallium Arsenide (GaAs)/Te combinations, confirming the robustness of the observed response. These findings emphasize the tunable and polarization-sensitive nature of resonances in hypercrystal systems, underscoring their potential for advanced THz photonic applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"138-143"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147665259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a Non-Enzymatic Potentiometric and Voltammetric Lactate Sensor Enhanced by ZnO/Co3O4/MB/SnO2 on Flexible Printed Circuit Board 柔性印刷电路板上ZnO/Co3O4/MB/SnO2增强非酶促电位伏安乳酸传感器的研制

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-04-22 DOI: 10.1109/TNANO.2026.3686637

Yu-Hsun Nien;Xin-Han Chen;Jung-Chuan Chou;Chih-Hsien Lai;Po-Yu Kuo;Po-Hui Yang;Yu-Wei Chen;Lian-Sheng Jiang

{"title":"Development of a Non-Enzymatic Potentiometric and Voltammetric Lactate Sensor Enhanced by ZnO/Co3O4/MB/SnO2 on Flexible Printed Circuit Board","authors":"Yu-Hsun Nien;Xin-Han Chen;Jung-Chuan Chou;Chih-Hsien Lai;Po-Yu Kuo;Po-Hui Yang;Yu-Wei Chen;Lian-Sheng Jiang","doi":"10.1109/TNANO.2026.3686637","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3686637","url":null,"abstract":"A non-enzymatic lactate sensor is successfully developed by integrating ZnO/Co3O4/methylene blue (MB)/SnO2 composite onto flexible printed circuit board (FPCB). ZnO provides a wide bandgap and surface area for adsorption, Co3O4 contributes p-type semiconducting behavior to promote charge separation, and MB serves as an effective redox mediator to accelerate electron transfer. Therefore, these materials form a highlyx responsive and stable sensing interface suitable for both the potentiometric and voltammetric detection modes. The sensor demonstrates good selectivity against common interfering biomolecules typically found in physiological fluids, ensuring reliable lactate detection in complex environments. In addition, the device remains consistent performance over an extended operational lifespan, confirming its mechanical and electrochemical stability for long-term use. The lactate sensor demonstrates a broad linear detection range (0.01–100 mM), with a high sensitivity of 21.9 μA/decade and excellent linearity (R2 = 0.999), highlighting its strong potential for accurate and reliable lactate monitoring across a broad concentration spectrum.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"163-171"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147828836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bridging the AC Non-Equilibrium Green’s Function Formalism and Transmission Line Models for the Analysis of Nanointerconnects 桥接交流非平衡格林函数形式和传输线模型用于纳米互连分析

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-02-27 DOI: 10.1109/TNANO.2026.3668364

Emile Vanderstraeten;Dries Vande Ginste

{"title":"Bridging the AC Non-Equilibrium Green’s Function Formalism and Transmission Line Models for the Analysis of Nanointerconnects","authors":"Emile Vanderstraeten;Dries Vande Ginste","doi":"10.1109/TNANO.2026.3668364","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3668364","url":null,"abstract":"The unfavorable scaling of Cu interconnects at nanoscale dimensions has prompted the search for alternative materials. To model electron transport in these novel nanointerconnects, both steady-state non-equilibrium Green’s function (NEGF) techniques and transmission line (TL) models have been employed. While steady-state NEGF enables a first-principles analysis of the transmission through realistic nanostructures, it cannot capture time-dependent behavior. TL models, on the other hand, offer insight into the dynamical properties of nanointerconnects but have been derived for idealized systems and require external input to approximately account for imperfections. Furthermore, they are based on a linear approximation of the bandstructure and cannot deal with nonlinear phenomena. Recently, an AC NEGF technique was introduced that addresses these issues by specifically targeting time-dependent phenomena under a periodic bias. In this work, we analytically demonstrate that, under appropriate assumptions, the linear TL model for nanowires emerges directly from the AC NEGF equations. The derivation naturally yields the correct boundary conditions, establishing AC NEGF as a robust and versatile framework for the modeling of next-generation nanointerconnects.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"82-91"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147557558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Near-Infrared Photodetector Based on Single-Walled Carbon Nanotubes/Graphene/Al2O3/InGaAs Structure 基于单壁碳纳米管/石墨烯/Al2O3/InGaAs结构的近红外探测器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-03-24 DOI: 10.1109/TNANO.2026.3677120

Danyang Zhang;Hao Gu;Jun Chen

引用次数: 0

RAPID: Re-Configurable Adder Tree Based Performance-Incentivized AI Digital CIM Macro 基于性能激励的AI数字CIM宏的可重构加法器树

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-04-01 DOI: 10.1109/TNANO.2026.3680063

Akash Sankhe;Mukul Lokhande;Narendra Singh Dhakad;Radheshyam Sharma;Santosh Kumar Vishvakarma

引用次数: 0

Multi-Bandwidth Coupling Performance Enhancement Using Si3N4-on-SOI Grating Coupler Platform 利用Si3N4-on-SOI光栅耦合器平台提高多带宽耦合性能

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-03-19 DOI: 10.1109/TNANO.2026.3675855

Tarun Sharma;Balveer Painam;Xingyu Liu;Zunyue Zhang;Shunsuke Murai;Kyoungsik Yu;Zhenzhou Cheng

{"title":"Multi-Bandwidth Coupling Performance Enhancement Using Si3N4-on-SOI Grating Coupler Platform","authors":"Tarun Sharma;Balveer Painam;Xingyu Liu;Zunyue Zhang;Shunsuke Murai;Kyoungsik Yu;Zhenzhou Cheng","doi":"10.1109/TNANO.2026.3675855","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3675855","url":null,"abstract":"Grating couplers (GCs) are the backbone of coupling of light from fibre to the photonic chips. In this article, we have designed and simulated a GC on Si3N4-on-SOI platform. The proposed design uses 700 nm thick Si3N4 grating layer as full etch grating filled with air on the 340 nm thick silicon-on-insulator (SOI). The mode phase matching between single mode optical fibre and unidirectional single GC waveguide is investigated here for the four different wavelength bands. The simulated peak coupling efficiency (CE) at four different wavelength bands (near Infrared, C-Band, O-Band, L-Band) is obtained at constant duty cycle (DC) and grating period (GP) with single full etch of 700 nm thick Si3N4 on 340 nm thick SOI platform. The simulated peak CE for different wavelengths (λ) at 810 nm, 1305 nm, 1550 nm, 1583 nm are obtained with Si3N4-on-SOI platform. The proposed GC design simulation shows good fabrication tolerance in terms of GP, DC and angle of incidence. The design is also compared with SOI & Si3N4 platforms where thickness of Si & Si3N4 is 220 nm, 700 nm respectively. The peak CE with SOI & Si3N4 platforms are obtained as −6.19 dB, −7.08 dB.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"107-112"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Area-Efficient, High-Throughput 2T-2MTJ STT-MRAM Architecture for In-Memory Computing Applications 面向内存计算应用的区域高效、高吞吐量2T-2MTJ STT-MRAM架构

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-04-06 DOI: 10.1109/TNANO.2026.3681441

Mohit Gupta;Ravi S. Siddanath;G Prasad;Karnati Paranjai;Manish Goswami;Kavindra Kandpal

{"title":"An Area-Efficient, High-Throughput 2T-2MTJ STT-MRAM Architecture for In-Memory Computing Applications","authors":"Mohit Gupta;Ravi S. Siddanath;G Prasad;Karnati Paranjai;Manish Goswami;Kavindra Kandpal","doi":"10.1109/TNANO.2026.3681441","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3681441","url":null,"abstract":"This paper presents a novel 2T-2MTJ STT-MRAM bit-cell architecture tailored for In-Memory Computing (IMC) applications, designed to address the limitations of conventional memory architectures. Using 2T-2MTJ bit-cells, our design significantly reduces chip area compared to traditional 8Transistor/10Transistor SRAM bitcell architectures while maintaining high throughput and energy efficiency. A tunable clamp voltage sensing scheme is introduced, enabling parallelism and efficient execution of key bitwise operations such as XNOR, NOR, and NAND without the added complexity of Analog-to-Digital Converters (ADC). Benchmarking using NeuroSim with the VGG-8 neural network, trained on the CIFAR-10 dataset, revealed a 208.52% and 95% increase in throughput (measured in TOPS) compared to 10T SRAM and 1T-1MTJ architectures, respectively, along with improvements in chip area, clock frequency, and overall system performance. This work showcases the potential of STT-MRAM-based IMC architectures to enhance energy efficiency, reduce design complexity, and improve scalability for Artificial Intelligence (AI) / Machine Learning (ML) workloads, making it a promising solution for next-generation computing systems.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"151-162"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147696736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mitigating NDR for Improved RF Performance in $mathrm{MoS_{2}}$ Ferroelectric Tunnel FET $ mathm {MoS_{2}}$铁电隧道场效应管降低NDR提高射频性能

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-03-19 DOI: 10.1109/TNANO.2026.3675800

Jagritee Talukdar;Bhaskaran Muralidharan

{"title":"Mitigating NDR for Improved RF Performance in $mathrm{MoS_{2}}$ Ferroelectric Tunnel FET","authors":"Jagritee Talukdar;Bhaskaran Muralidharan","doi":"10.1109/TNANO.2026.3675800","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3675800","url":null,"abstract":"The work realized a steep-slope <inline-formula><tex-math>$mathrm{MoS_{2}}$</tex-math></inline-formula> based negative capacitance-tunnel field effect transistor (NC-TMDTFET) through the incorporation of the ferroelectric layer into the gate stack. The proposed device sustained a subthreshold slope of 0.023 V/decade and 0.018 V/decade in forward and reverse sweep respectively and an <inline-formula><tex-math>$mathrm{ON/OFF}$</tex-math></inline-formula> current ratio of <inline-formula><tex-math>$10^{12}$</tex-math></inline-formula>. The work investigates the effect of the ferroelectric layer on input and output characteristics. In the subsequent observation, it was noted that as the drain voltage increases, there is a decrease in current, indicating the presence of negative differential resistance (NDR) within the proposed device. However, mitigation of such effect in TMD based NC-TFET has not yet been introduced. Hence, to address the NDR issue hetero-dielectric BOX (H-BOX) is introduced which directly influences the gate-to-drain capacitance of the device. We report a 56.71% reduction in <inline-formula><tex-math>$C_{GD}$</tex-math></inline-formula>, a 15.83% improvement in intrinsic delay, and a corresponding 48.95% improvement in cutoff frequency due to the introduction of H-BOX resulting enhancement in device speed. These improvements demonstrate that H-BOX integration effectively enhances key parameters making it a viable solution for analog applications that require high performance and low power consumption.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"113-118"},"PeriodicalIF":2.1,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0