IEEE Transactions on Nanotechnology最新文献_第10页

Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures 多肽调控自组装 In2O3/ZnO 纳米立方体，在低工作温度下增强 H2 气体传感能力

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413719

Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng

{"title":"Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures","authors":"Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2024.3413719","DOIUrl":"10.1109/TNANO.2024.3413719","url":null,"abstract":"In this study, hydrogen sensors based on In\u00002\u0000O\u00003\u0000/ZnO nanocubes are fabricated by single step hydrothermal route, and polypeptide is utilized to guide the morphology of the composites to heighten the responsiveness of the sensors to hydrogen at low operating temperatures. A series of analyses and validations are carried out by characterization techniques. Gas sensitivity test results display that the optimal operating temperature of the modified sensing element is reduced by 60 °C compared to the initial element, accompanied by a doubling of the response value (22.12). At the same time, the response time to 100 ppm H\u00002\u0000 is 2.5 s. Even more strikingly, the modified gas sensing element has evidently improved the response speed to low-ppm levels hydrogen. Moreover, the sensor components exhibit favorable repeatability, stability and excellent selectivity. By analyzing the characterization data and gas-sensitive test results, the improved responsiveness of the sensing elements is mainly attributed to the synergistic effect of the dilatation in the specific surface area of the gas-sensitive materials and the increase in intergranular contacts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"500-511"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions 理解自整流晶闸管在误差校正物理不可克隆函数中的随机行为

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413888

Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du

{"title":"Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions","authors":"Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du","doi":"10.1109/TNANO.2024.3413888","DOIUrl":"10.1109/TNANO.2024.3413888","url":null,"abstract":"Physical Unclonable Functions (PUFs) have gained widespread attention for their secure key storage, authentication, and anti-counterfeiting applications. While traditional PUFs based on Complementary Metal-Oxide-Semiconductor (CMOS) have been extensively studied, the emergence of memristors offers new opportunities due to their inherent device variations and distinctive resistive switching behaviors. This study explores the construction of reliable PUFs using self-rectifying analog BiFeO\u0000<inline-formula><tex-math>$_{3}$</tex-math></inline-formula>\u0000 (BFO) memristors. We assess the raw bit error rate (rBER) of the BFO-based PUF under varying voltage challenges and classify the switching behavior into stochastic, transition, and deterministic regions. As the primary objective of this study, we identify the sources of stochastic behavior in the three distinct regions while investigating the physical switching mechanism in BFO cells. Additionally, we propose a key storage method based on memristor variability, including an error correction scheme to enhance the reliability of PUF. This research contributes to a comprehensive understanding of PUF reliability and the underlying sources of intrinsic stochastic behavior in memristive technology.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"490-499"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications 通过新型光化学合成方法表征吸附在一维氧化锌纳米材料上的金纳米颗粒在场致发射器中的应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-12 DOI: 10.1109/TNANO.2024.3409631

Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu

{"title":"Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications","authors":"Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu","doi":"10.1109/TNANO.2024.3409631","DOIUrl":"10.1109/TNANO.2024.3409631","url":null,"abstract":"This work explores the growth of vertically aligned zinc oxide nanorod (ZnO NR) arrays on a conductive indium-tin-oxide (ITO) substrate by using a simple hydrothermal solution route method at 95 °C for 3 h. Additionally, the gold nanoparticles (Au NPs) were victoriously adsorbed on the NR surface through a low-cost photochemical method under ultraviolet (UV) light at room temperature for field-emission (FE) emitters. To explore one-dimensional (1-D) nanostructures, high-resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), and field-emission scanning electron microscope (FE-SEM) measurement were conducted. It was found that the NRs were almost perpendicular to the substrate with c-axis direction. The Au concentration of the 1-D NR array was 0.75 at% in energy-dispersive X-ray (EDX) result. ZnO nanomaterials with and without Au NPs were labelled 1-D Z@Au-3 and Z@Au-0 NRs, respectively. The turn-on electric field and effective field enhancement factor (β) of the Z@Au-0 NR devices were 4.56 V/μm and 4902, and those of the Z@Au-3 NR devices were 3.25 V/μm and 12955, respectively. Meanwhile, the slope value of the Z@Au-3 sample (6.43) was also lower than that of the Z@Au-0 NR sample (17.01). It can be seen that the Au NPs enhanced the FE property of the emitter. As a result, the designed 1-D ZnO samples with noble Au NPs are an encouraging candidate in future FE-based device applications, which can use in various electronic applications such as FE display panels, X-ray sources, light sources, and parallel electron beam microscopes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"478-481"},"PeriodicalIF":2.1,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep Memristive Cellular Neural Networks for Image Classification and Segmentation 用于图像分类和分割的深度记忆细胞神经网络

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-10 DOI: 10.1109/TNANO.2024.3411689

András Horváth;Franciska Rajki;Alon Ascoli;Ronald Tetzlaff

引用次数: 0

Nanostructured V2O5/MoO3 Based Devices for Brain Inspired Optical Memory Applications 基于纳米结构 V2O5/MoO3 的脑启发光学记忆应用器件

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-04 DOI: 10.1109/TNANO.2024.3409151

Sharmila B;Priyanka Dwivedi

引用次数: 0

A Judicious Exploitation of Electrical Characteristics of a Unique GeSn TFET With Corner-Point for Sensing S-Protein Biomarker 巧妙利用具有角点的独特 GeSn TFET 的电气特性来传感 S 蛋白生物标记物

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-04 DOI: 10.1109/TNANO.2024.3409055

Sanu Gayen;Suchismita Tewari;Avik Chattopadhyay

{"title":"A Judicious Exploitation of Electrical Characteristics of a Unique GeSn TFET With Corner-Point for Sensing S-Protein Biomarker","authors":"Sanu Gayen;Suchismita Tewari;Avik Chattopadhyay","doi":"10.1109/TNANO.2024.3409055","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3409055","url":null,"abstract":"In this paper, for the first time, a unique Ge\u0000(1-x)\u0000Sn\u0000x\u0000 alloy-based TFET sensor with a deliberate corner-point in the channel has been proposed for successful detection of S-protein, a significant biomarker. After the validation of our simulation scheme through a process of calibration of an experimentally realized mother GeSn TFET device, the same is turned into the proposed sensor device by suitably creating nanogap cavity in it. The performance of the proposed sensor device has been thoroughly investigated as a function of channel epilayer thickness (CH\u0000epi\u0000) in terms of a set of performance metrics – P-responsivity and P-sensitivity. Then, by varying the mole-fraction of Ge\u0000(1-x)\u0000Sn\u0000x\u0000 in the proposed sensor, the sensing performance has been studied in terms of the aforementioned performance metrics, along with an additional unique metric known as dynamic sensitivity. Interestingly, it has been observed that the most suitable device in pure electronic domain (digital or analog) is the least suited in sensing domain and vice-versa. This forbids the tendency of blind-picking of device with enhanced performance in pure electronic domain for sensing purpose as well without proper investigation. After a thorough analysis, it is observed that the proposed sensor with CH\u0000epi\u0000 = 10 nm has evolved as the most optimized sensor device while the choice of mole-fraction remains application specific. Also, the ultimately optimized sensor shows a fairly good performance in dealing with the real-time position variability aspect (even if it is due to the repulsive steric effects of S-protein molecules) which results in a partial hybridization issue.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"467-473"},"PeriodicalIF":2.1,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Efficiency in Thin Film Solar Cells: Optimized Design With Front Nanotextured and Rear Nanowire-Based Light Trapping Structure 提高薄膜太阳能电池的效率：采用前纳米挤压和后纳米线捕光结构的优化设计

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-03 DOI: 10.1109/TNANO.2024.3408253

Tauseef Ahmed;Mukul Kumar Das

{"title":"Enhanced Efficiency in Thin Film Solar Cells: Optimized Design With Front Nanotextured and Rear Nanowire-Based Light Trapping Structure","authors":"Tauseef Ahmed;Mukul Kumar Das","doi":"10.1109/TNANO.2024.3408253","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3408253","url":null,"abstract":"This paper introduces a highly effective method to enhance the power conversion efficiency of thin-film solar cells with a microcrystalline absorber layer. The study involves the creation of a device simulation model that takes into account optical phenomena like light scattering and diffusive reflection, as well as electrical aspects related to the physics of heterointerfaces. The proposed design includes a textured front surface, silicon nanowires on the rear side of the absorber layer, and a back contact-cum-reflector composed of multiple alternative layers. To achieve optimal outcomes, it is essential to determine the ideal values for parameters such as the average width-to-height ratio of the textured front surface, the height of the backside nanowires, and the thickness and doping levels of different layers like ITO, emitter, buffer, and BSF. The findings indicate that when these parameters are set to their optimal values, the proposed structure can achieve a peak efficiency of 13.62%. This marks a substantial improvement of 34.70% when compared to the optimized flat thin-film solar cell structure.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"456-466"},"PeriodicalIF":2.1,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical Modeling and Performance Analysis of Cu and CNT Based TSV-Bump-RDL 基于铜和碳纳米管的 TSV-Bump-RDL 的电气建模和性能分析

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-03 DOI: 10.1109/TNANO.2024.3408310

Shivangi Chandrakar;Kamal Solanki;Deepika Gupta;Manoj Kumar Majumder

{"title":"Electrical Modeling and Performance Analysis of Cu and CNT Based TSV-Bump-RDL","authors":"Shivangi Chandrakar;Kamal Solanki;Deepika Gupta;Manoj Kumar Majumder","doi":"10.1109/TNANO.2024.3408310","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3408310","url":null,"abstract":"The adoption of a feasible bump shape exerts a significant impact on the functionality of a 3D IC. The cylindrical bump structure, considered among the most prevalent shape, endures significant delay, power loss and crosstalk challenges. The tapered based TSV-bump structure recently acquired prominence due to their ultra-low fraction of volume and coupling, resulting in significant alleviation of delay and crosstalk issues. The electrical \u0000<italic>RLGC\u0000 modeling has been accomplished for cylindrical, barrel, hourglass and the tapered bump structures along with the impact of coupling, passivation and fringing on the redistribution layer (RDL). In order to validate the proposed TSV bump structure, the quantitative values of a via is compared against the EM and experimental results, and a subsequent investigation have been accomplished for the propagation delay, power dissipation, peak noise, insertion and reflection losses. The proposed via bump structure is remarkable consistence with the experimental results with an average deviation of only 3.51%. In addition, the Finite difference time-domain (FDTD) electromagnetic computation is employed to further examine the performance characteristics. Furthermore, it is worth emphasizing that the tapered bump structure can effectively reduce the propagation delay, power dissipation, peak noise, insertion and reflection losses with an average deviation of 34.83%, 28.62%, 29.98%, 13.57%, and 41.06%, respectively, when compared to the barrel, cylindrical and hourglass bumps.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"448-455"},"PeriodicalIF":2.1,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Semi-Empirical DFT Based Investigation of Electronic and Quantum Transport Properties of Novel GS-AGNR (N) FET 基于半经验 DFT 的新型 GS-AGNR (N) FET 电子和量子输运特性研究

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-04-30 DOI: 10.1109/TNANO.2024.3394547

Anshul;Rishu Chaujar

{"title":"Semi-Empirical DFT Based Investigation of Electronic and Quantum Transport Properties of Novel GS-AGNR (N) FET","authors":"Anshul;Rishu Chaujar","doi":"10.1109/TNANO.2024.3394547","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3394547","url":null,"abstract":"In this article, the electronic and quantum transport properties for the bulk configuration of armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR width (N) are investigated. The semi-empirical (SE) Density Functional Theory (DFT) approach is used to calculate the band structure, density of states (DOS), and transmission spectrum for the bulk configuration of AGNR. Further, the AGNRs are used in channel material to analyze the performance of field-effect transistors with Gate Stack (GS) architecture. The result shows that the bandgap value is higher for AGNR (N = 4) with a value of 1.98 eV compared to another bulk configuration of AGNRs. In addition to this, AGNR (N = 4) also shows an improved transmission spectrum. Moreover, the transmission spectrum at varied input voltages and projected local density of states (PLDOS) are also analyzed to study the performance of the proposed devices. The parameters mentioned above give a unique idea for evaluating the performance in terms of resonance peaks and electronic structure for device configurations. The off current (I\u0000off\u0000) is remarkably reduced, and the switching ratio (I\u0000on\u0000/I\u0000off\u0000) is significantly improved in GS-AGNR (N = 4) FET compared with other device configurations. Owing to the enhanced switching, this paper highlights GS-AGNR (N = 4) FET as a suitable candidate for low-power applications such as low-power sensors, wireless communication, and medical devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"400-407"},"PeriodicalIF":2.4,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140844471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors 单壁碳纳米管全栅极场效应晶体管的低温特性

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-04-26 DOI: 10.1109/TNANO.2024.3394294

Reza Nekovei;Amit Verma

引用次数: 0