IEEE Transactions on Nanotechnology最新文献_第10页

A Low-Power and Reliable RRAM-Based Configurable RO PUF With Aging Resilience 具有老化弹性的低功耗可靠rram可配置RO PUF

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-12 DOI: 10.1109/TNANO.2025.3569071

Jiang Li;Yijun Cui;Chenghua Wang;Chongyan Gu;Weiqiang Liu

{"title":"A Low-Power and Reliable RRAM-Based Configurable RO PUF With Aging Resilience","authors":"Jiang Li;Yijun Cui;Chenghua Wang;Chongyan Gu;Weiqiang Liu","doi":"10.1109/TNANO.2025.3569071","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3569071","url":null,"abstract":"Emerging nano-device resistive random access memories (RRAMs) have become a promising primitive for PUF designs due to their non-volatility, high density, and low power, breaking through the physical limitations. A ring oscillator based physical unclonable function (RO PUF) is one of the most widely studied PUF designs due to its resilience against noise impacts and flexibility of implementation, but its reliability is susceptible to environmental variation and device aging. Present solutions to improve RO PUF reliability either require complicated RO selection algorithms or require discarding a large number of unstable challenge-response pairs (CRPs). This paper presents a highly reliable RRAM-based configurable RO PUF (RCRO-PUF). The proposed RCRO-PUF utilizes the intrinsic variations of RRAMs as the randomness source and applies the resistance variations of RRAMs to the frequency difference of current-starved (CS) ROs. By operating CS inverters in the subthreshold region, the RCRO-PUF achieves low power as well as high reliability. In addition, a reliability enhancement scheme is proposed to eliminate the effects of environmental variations and device aging. Based on Monte Carlo simulations of a 65 nm CMOS process, the proposed RCRO-PUF consumes only 16.18% of the hardware overhead for a regular RO PUF and has only 7.43 <inline-formula><tex-math>$mu W$</tex-math></inline-formula> per CRP generation. The reliability of the RCRO-PUF is 99.51% over a broad range of temperatures from <inline-formula><tex-math>$-50,^{circ }$</tex-math></inline-formula>C to <inline-formula><tex-math>$150,^{circ }$</tex-math></inline-formula>C and <inline-formula><tex-math>$pm$</tex-math></inline-formula>20% supply voltage variations. It is also 4.7× more resilient to aging than state-of-the-art aging-resilient RO PUF.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"293-306"},"PeriodicalIF":2.1,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transistors With MoS$_{2}$ Subnanometer Channels Embedded in 2D WSe$_{2}$ 在二维WSe$_{2}$中嵌入MoS$_{2}$亚纳米通道的晶体管

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-11 DOI: 10.1109/TNANO.2025.3549522

T. Cusati;D. Marian;A. Toral-Lopez;E. G. Marin;G. Iannaccone;G. Fiori

引用次数: 0

Hybrid Graphene-Plasmonic-Based Single-Mode Metamaterial Perfect Absorber With an Ultra-Narrow Band for Hemoglobin Concentration Sensing 基于石墨烯-等离子体的单模超材料完美吸收体及其超窄带血红蛋白浓度传感

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-09 DOI: 10.1109/TNANO.2025.3568626

Shiva Khani

{"title":"Hybrid Graphene-Plasmonic-Based Single-Mode Metamaterial Perfect Absorber With an Ultra-Narrow Band for Hemoglobin Concentration Sensing","authors":"Shiva Khani","doi":"10.1109/TNANO.2025.3568626","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3568626","url":null,"abstract":"This paper proposes an ultra-narrow band single-mode metamaterial perfect absorber consisting of periodic square graphene split rings and gold (Au) strips at the top layer, an insulator interlayer of SiO<sub>2</sub>, and an Au base layer. The absorber designed in this paper incorporates the benefits of conventional graphene plasma and metal plasma and has two applications a perfect absorber and a refractive index sensor (RIS). The finite difference time domain method is used to study the absorption and sensing characteristics of the designed topology. The results show an absorption peak at 3.092 THz with an absorption coefficient of 97.45%, and an absorption bandwidth of 88.11 GHz is achieved. In addition, the generated narrow absorption peak can be flexibly tuned by varying the graphene layer’s chemical potential. Also, high sensitivity and FoM values of 3040 GH/RIU and 34.5 RIU<sup>-1</sup> are obtained for the proposed RIS, respectively. The performance of the suggested RIS is analyzed to measure the hemoglobin concentration in human blood. According to the results, the offered design can be a suitable option for future optical bio-sensors for biomedical applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"537-545"},"PeriodicalIF":2.1,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polynomial Formal Verification of a RISC-V Processor RISC-V处理器的多项式形式验证

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-05 DOI: 10.1109/TNANO.2025.3548265

Lennart Weingarten;Kamalika Datta;Rolf Drechsler

引用次数: 0

Effects of 3D Channel Shape on the Performance of Nanoscale Gate-All-Around FETs 三维沟道形状对纳米级全栅极场效应晶体管性能的影响

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-03 DOI: 10.1109/TNANO.2025.3546872

Min Kyun Sohn;Sang-Hoon Kim;Seong Hyun Lee;Jeong Woo Park;Dongwoo Suh

引用次数: 0

High-Speed and Low-Cost In-Array Memristive Multipliers Using SIXOR and TMSL Logics 采用SIXOR和TMSL逻辑的高速低成本阵列记忆乘法器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-01 DOI: 10.1109/TNANO.2025.3566272

Roya Rahimi Disfani;Mojtaba Valinataj;Nima TaheriNejad

{"title":"High-Speed and Low-Cost In-Array Memristive Multipliers Using SIXOR and TMSL Logics","authors":"Roya Rahimi Disfani;Mojtaba Valinataj;Nima TaheriNejad","doi":"10.1109/TNANO.2025.3566272","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3566272","url":null,"abstract":"Memristive systems have many promising features, making them suitable for both storage and computation. Memristors can perform logical operations and they can be used as the basic structures in digital circuits such as adders and multipliers. In this paper, at first, a new fast and low-cost Full-Adder (FA) is proposed using Single-cycle In-memristor XOR (SIXOR) and Three Memristors Stateful Logic (TMSL) gates that benefits from the advantages of both logics. Then, the proposed FA is used as one of the basic units inside two new array multipliers. The first proposed multiplier is designed in such a way that it has the lowest computational steps (delay) among the existing designs. This design has on average around 70% lower delay compared to the existing designs. The second proposed multiplier, as the low-cost design, requires a very low number of memristors thanks to reusing the existing resources more efficiently, while still having a low delay. This multiplier achieves on average around 36% memristor reduction compared to the state-of-the-art multipliers. Based on the analysis, both proposed array multipliers have notable efficiency advantages compared to the state-of-the-art designs based on different Figures of Merit (FoMs). For example, based on the balanced Figure of Merit (FoM), in which the number of computational steps and the number of required memristors have equal weight, the first and the second proposed multipliers achieve up to 4.6× and 14.9× improvements, respectively, compared to the existing designs in 64-bit multiplication.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"13-25"},"PeriodicalIF":2.1,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145996542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Temperature, Strain Rate, and Vacancies on the Mechanical Properties of Aluminum-Doped Bilayer Silicene 温度、应变速率和空位对掺铝双层硅烯力学性能的影响

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-28 DOI: 10.1109/TNANO.2025.3546749

Alexandre Melhorance Barboza;Luis César Rodríguez Aliaga;Daiara Fernandes de Faria;Ivan Napoleão Bastos

{"title":"Influence of Temperature, Strain Rate, and Vacancies on the Mechanical Properties of Aluminum-Doped Bilayer Silicene","authors":"Alexandre Melhorance Barboza;Luis César Rodríguez Aliaga;Daiara Fernandes de Faria;Ivan Napoleão Bastos","doi":"10.1109/TNANO.2025.3546749","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3546749","url":null,"abstract":"Silicene, a two-dimensional material with promising potential for future technological applications, has attracted considerable attention over the past decade. Recent research has focused on modifying silicene's electronic and magnetic properties by means of adsorption or substitutional doping. While the magnetic, electronic, and optical properties of doped silicene have been extensively studied, there is a noticeable gap in the literature regarding its mechanical properties. To address this issue, this study explores the mechanical characteristics of bilayer silicene doped with aluminum under various conditions. By employing molecular dynamics simulations, we investigate the influence of aluminum concentration, defects, temperature, and strain rate on the material's mechanical response. The findings reveal a monotonically decreasing strength with Al concentration in both the zigzag and armchair straining directions. Additionally, the material exhibits high sensitivity to defects, with even a small percentage significantly impairing its mechanical properties. Directional dependence is also observed, with the zigzag direction showing greater sensitivity than the armchair. As strain progresses, initial mono-vacancies evolve into more complex defects, hindering predictions of the mechanical response in certain cases. Lastly, strain rate sensitivity is evaluated, yielding values of 0.0485 and 0.0365 for the zigzag and armchair directions, respectively.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"134-139"},"PeriodicalIF":2.1,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908092","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143621888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks 真实忆阻器器件间变异性对非耦合忆阻细胞非线性网络实现影响的动态分析

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-24 DOI: 10.1109/TNANO.2025.3545251

Yongmin Wang;Kristoffer Schnieders;Vasileios Ntinas;Alon Ascoli;Felix Cüppers;Susanne Hoffmann-Eifert;Stefan Wiefels;Ronald Tetzlaff;Vikas Rana;Stephan Menzel

{"title":"Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks","authors":"Yongmin Wang;Kristoffer Schnieders;Vasileios Ntinas;Alon Ascoli;Felix Cüppers;Susanne Hoffmann-Eifert;Stefan Wiefels;Ronald Tetzlaff;Vikas Rana;Stephan Menzel","doi":"10.1109/TNANO.2025.3545251","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3545251","url":null,"abstract":"Cellular Nonlinear Networks (CNNs) are a well established computing approach in the domain of analog computing, known for massive parallelism and data processing locality that enable efficient hardware implementations. Combining CNN with non-volatile memristive devices holds the promise to overcome technological hurdles, like scalability issues, and high energy consumption, while also introducing richer dynamics into the field of CNN. Memristive devices based on the valence change mechanism (VCM) show great properties, like bipolar switching, tuneable resistance and non-volatility that are essential for the design of memristive CNN (M-CNN). In this study we design and investigate an uncoupled M-CNN cell implementing the EDGE detection task. This is the first paper investigating the resilience of M-CNN against device-to-device variability. To this end the first experimentally acquired Dynamic Route Map (DRM) of the M-CNN cell is employed. The comparison with simulations results allows for investigating the effect of mechanisms in the VCM device on the performance of the cell. The result of the computation is stored in the VCM device despite the unavoidable variability in the electrical behaviors of different device samples. Furthermore, the theoretically predicted richer dynamics of M-CNNs over traditional CNNs is demonstrated. This work provides crucial insights into design considerations of M-CNNs, especially as here first steps towards the comprehensive analysis on the effect of imperfections and variability of the memristor on M-CNN cell are taken.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"121-128"},"PeriodicalIF":2.1,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10902144","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143621924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ti-Doped ZnO Nanowires: A Breakthrough in Non-Volatile Resistive Memory Application ti掺杂ZnO纳米线：非易失性电阻存储应用的突破

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-21 DOI: 10.1109/TNANO.2025.3544438

Amitabha Nath;Madhuri Mishra;Subhananda Chakrabarti

引用次数: 0

ANN-Driven Modeling of Gate-All-Around Transistors Incorporating Complete Current Profiles 具有完整电流分布的栅极全能晶体管的人工神经网络驱动建模

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-14 DOI: 10.1109/TNANO.2025.3542165

Anant Singhal;Harshit Agarwal

引用次数: 0