IEEE Transactions on Nanotechnology最新文献_第10页

Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM 电压控制磁各向异性 MRAM 的随机感知建模

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-02-02 DOI: 10.1109/TNANO.2024.3361718

Bowen Wang;Fernando García-Redondo;Marie Garcia Bardon;Hyungrock Oh;Mohit Gupta;Woojin Kim;Diego Favaro;Yukai Chen;Wim Dehaene

引用次数: 0

CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM) 基于 CMOS-RRAM 的非易失性三元内容可寻址存储器 (nvTCAM)

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-30 DOI: 10.1109/TNANO.2024.3360312

Manoj Kumar;Ming-Hung Wu;Tuo-Hung Hou;Manan Suri

{"title":"CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM)","authors":"Manoj Kumar;Ming-Hung Wu;Tuo-Hung Hou;Manan Suri","doi":"10.1109/TNANO.2024.3360312","DOIUrl":"10.1109/TNANO.2024.3360312","url":null,"abstract":"We propose a Non-Volatile Ternary Content Addressable Memory (nvTCAM) by utilizing two Resistive Random-Access Memory (RRAM) cells integrated with individual selector transistors (i.e., 2-Transistor, 2-RRAM). A 2T2R cell configured either in complementary resistive switching mode (i.e., if one 1T1R cell is in low resistance state then the other cell will be in high resistance state or vice-versa) or both RRAMs in high resistance state is utilized to implement a single nvTCAM unit. Through Monte-Carlo (MC) simulations and power supply scaling (i.e., \u0000<inline-formula><tex-math>$V_{DD}$</tex-math></inline-formula>\u0000 varying from 1.4 V to 2.2 V) effects, reliability of the proposed cell was studied. Moreover, we performed the simulations for various sizes of word length from 1-bit to 64-bits and calculated the energy and delay parameters. We compared the proposed nvTCAM cell with various existing CMOS/NVM (Non-Volatile Memory) designs. Our proposed nvTCAM design provides \u0000<inline-formula><tex-math>$geq 2times$</tex-math></inline-formula>\u0000 area efficiency as compared to CMOS-NVM counterparts and even upto \u0000<inline-formula><tex-math>$sim 6times$</tex-math></inline-formula>\u0000 area saving with respect to CMOS-based volatile TCAM. The proposed design achieves atleast 1.68× to 2.27× energy efficiency, as compared to existing CMOS/RRAM implementations. Moreover the energy saving is further increased upto \u0000<inline-formula><tex-math>$sim 1400times$</tex-math></inline-formula>\u0000 as compared to magnetic/ferroelectric-based nvTCAM counterparts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"203-207"},"PeriodicalIF":2.4,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139956601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Evaluation of Tailored Double Heterojunction Non-Toxic Metal Oxide-Based Nanostructured Sensor for Multi-Sensing Application 用于多重传感应用的定制双异质结无毒金属氧化物纳米结构传感器的实验评估

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-29 DOI: 10.1109/TNANO.2024.3359697

Binowesley R;Kirubaveni Savarimuthu;Kiruthika Ramany;Govindaraj Rajamanickam

{"title":"Experimental Evaluation of Tailored Double Heterojunction Non-Toxic Metal Oxide-Based Nanostructured Sensor for Multi-Sensing Application","authors":"Binowesley R;Kirubaveni Savarimuthu;Kiruthika Ramany;Govindaraj Rajamanickam","doi":"10.1109/TNANO.2024.3359697","DOIUrl":"10.1109/TNANO.2024.3359697","url":null,"abstract":"A systematized experimental interpretation of BaTiO\u00003\u0000 (B), ZnO (Z), and BaTiO\u00003\u0000/ZnO (B/Z) based sensors, fabricated via a facile solution-based method is reported. The structural properties analysis of all the sensors fabricated reveals the formation of characteristic respective dominant peaks (hexagonal, tetragonal, and heterostructure (hexagonal and tetragonal) for B, Z, and B/Z respectively). The decrease of band gap (2.97 eV-B/Z) due to double heterojunction formation is evident from tauc plot analysis. The fabricated multi-sensing sensors were subjected to both gas (CO (carbon monoxide) & (CH\u00004\u0000) methane) and acceleration sensing systems individually to explore sensing properties. Comparably, the B/Z sensor showed improved gas sensing properties in terms of better response time (s), recovery time (s), and sensor response (%) at lower concentrations (10 ppm) for CO gas ∼1.12, ∼2.2 and ∼61.54 and CH\u00004\u0000 gas ∼4.12, ∼58.69, ∼14 respectively at room temperature. Likewise, the B/Z sensor exhibited a maximum output voltage of 2.31 V at a 13 Hz resonant frequency and a sensitivity of 1.9316 Vg\u0000−1\u0000 compared to the other fabricated sensors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"164-169"},"PeriodicalIF":2.4,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode 石墨烯电极电阻式随机存取存储器电热模拟的紧凑型模型

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-26 DOI: 10.1109/TNANO.2024.3358950

Xingyu Zhai;Yun Li;Wen-Yan Yin;Shuo Zhang;Wenxuan Zang;Yanbin Yang;Hao Xie;Wenchao Chen

引用次数: 0

Low-Cost and Highly-Efficient Bit-Stream Generator for Stochastic Computing Division 用于随机计算部门的低成本、高效率比特流生成器

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-26 DOI: 10.1109/TNANO.2024.3358395

Mehran Shoushtari Moghadam;Sercan Aygun;Sina Asadi;M. Hassan Najafi

{"title":"Low-Cost and Highly-Efficient Bit-Stream Generator for Stochastic Computing Division","authors":"Mehran Shoushtari Moghadam;Sercan Aygun;Sina Asadi;M. Hassan Najafi","doi":"10.1109/TNANO.2024.3358395","DOIUrl":"10.1109/TNANO.2024.3358395","url":null,"abstract":"Stochastic computing (SC) division circuits have gained importance in recent years compared to other arithmetic circuits due to their low complexity as a result of an accuracy tradeoff. Designing a division circuit is already complex in conventional binary-based hardware systems. Developing an accurate and efficient SC division circuit is an open research problem. Prior work proposed different SC division circuits by using multiplexers and JK-flip-flop units, which may require correlated or uncorrelated input bit-streams. This study is primarily centered on exploring a cost-effective and highly efficient bit-stream generator specifically designed for SC division circuits. In conjunction with this objective, we assess the performance of multiple bit-stream generators and analyze the impact of correlation on SC division. We compare different designs in terms of accuracy and hardware cost. Moreover, we discuss a low-cost and energy-efficient bit-stream generator via powers-of-2 Van der Corput (VDC) sequences. Among the tested sequence generators, our best results were achieved with VDC sequences. Our evaluation results demonstrate that the novel VDC-based design yields promising outputs, resulting in a 15.5% reduction in the area-delay product and an 18.05% saving in energy consumption for the same accuracy level compared to conventional bit-stream generators. Significantly, our investigation reveals that employing the proposed generator improves the precision compared to the state-of-the-art. We validate the proposed architecture with an image processing case study, achieving high PSNR and structural similarity values.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"195-202"},"PeriodicalIF":2.4,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DFT Calculations for Temperature Stable Quantum Capacitance of VS2 Based Electrodes for Supercapacitors 基于 VS2 的超级电容器电极的温度稳定量子电容的 DFT 计算

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-24 DOI: 10.1109/TNANO.2024.3358017

Ashish Kumar Yadav;Shreevathsa N S;Rohit Singh;Partha Pratim Das;Vivek Garg;Sushil Kumar Pandey

{"title":"DFT Calculations for Temperature Stable Quantum Capacitance of VS2 Based Electrodes for Supercapacitors","authors":"Ashish Kumar Yadav;Shreevathsa N S;Rohit Singh;Partha Pratim Das;Vivek Garg;Sushil Kumar Pandey","doi":"10.1109/TNANO.2024.3358017","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3358017","url":null,"abstract":"Using density functional theory calculations, we demonstrate the quantum capacitance of the VS\u00002\u0000 electrode which can be improved by doping with non-metallic elements such as nitrogen (N), phosphorus (P), and arsenic (As) atoms. The radius, charge, and morphology of these non-metallic elements help to improve the performance of VS\u00002\u0000 material as electrodes of supercapacitors. The As-doped VS\u00002\u0000 monolayer demonstrated the maximum quantum capacitance of 31.2369 μF/cm\u00002\u0000 at 300 K. At 1200 K, quantum capacitance reaches the value of 25.2149 μF/cm\u00002\u0000, showing the inconsiderable change in value for this wide range of temperature variation. Additionally, the other important properties of undoped and doped VS\u00002\u0000 monolayers such as density of states, energy band structure, electrical conductivity, thermal conductivity, and the Seebeck coefficient were also computed and examined in detail. The band structure of the P and As-doped VS\u00002\u0000 monolayers showed a metallic nature, which is suitable for electrode application. In the case of As-doped VS\u00002\u0000 material, a high figure of merit of 3.536 was observed by using DFT-D2 calculations, due to the large Seebeck coefficient and significant electrical conductivity. Our findings will be helpful in further exploring the suitability of VS\u00002\u0000 monolayers as electrodes of supercapacitors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"132-138"},"PeriodicalIF":2.4,"publicationDate":"2024-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139749899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

NeuroSOFM-Classifier: Nanoscale FeFETs Based Low Power Neuromorphic Architecture for Classification Using Continuous Real-Time Unsupervised Clustering NeuroSOFM-Classifier：利用连续实时无监督聚类进行分类的基于纳米级 FeFET 的低功耗神经形态架构

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-23 DOI: 10.1109/TNANO.2024.3357068

Siddharth Barve;Rashmi Jha

引用次数: 0

Ab-Initio Investigations into Frenkel Defects in Hexagonal Boron Nitride for Quantum Optoelectronic Applications 对六方氮化硼中用于量子光电应用的 Frenkel 缺陷的 Ab-Initio 研究

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-16 DOI: 10.1109/TNANO.2024.3354460

Sunny Kumar;Vikash Mishra;Kolla Lakshmi Ganapathi;Muralidhar Miryala;M. S. Ramachandra Rao;Tejendra Dixit

{"title":"Ab-Initio Investigations into Frenkel Defects in Hexagonal Boron Nitride for Quantum Optoelectronic Applications","authors":"Sunny Kumar;Vikash Mishra;Kolla Lakshmi Ganapathi;Muralidhar Miryala;M. S. Ramachandra Rao;Tejendra Dixit","doi":"10.1109/TNANO.2024.3354460","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3354460","url":null,"abstract":"The van Der Waals material, hexagonal boron nitride (h-BN) is being studied extensively for electronics, sensing, photonics, and quantum technology. Identifying distinct point-defects that may be employed to create qubits and single photon emitters with specific properties has recently boosted defect engineering research in h-BN. The assignment of defects to specific characteristics of h-BN is a subject of contention and so necessitates further investigation. We have examined the defect stability under different growth conditions for the assignment of defect states for the aforementioned applications using first-principles calculations. In this work, it is found that boron Frenkel pairs (V\u0000B\u0000-B\u0000i\u0000) play very critical role under N-rich and N-poor growth conditions. Boron Frenkel pairs were found to activate magnetic behaviour (with 0.45 μ\u0000B\u0000) by forming spin active defect-states in forbidden gap. Furthermore, four distinct absorption peaks in the sub-bandgap regions (with peak values at 2.47, 2.30, 1.98, and 1.61 eV) have been observed, resulting into the well-known ∼2 eV emission. The large ultraviolet quantum efficiency observed in h-BN has been explained by considering Frenkel pairs as primary defect centres, which leads to strong photocatalytic and photovoltaic properties. This work will establish Frenkel pairs as one of the most intriguing defect states in h-BN leading towards various optoelectronic and quantum applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"109-113"},"PeriodicalIF":2.4,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139700413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband Graphene/TiO2 Optical Modulator Based on Hybrid Plasmonic Waveguide for Ultrafast Switching and Low-Voltage State 基于混合质子波导的宽带石墨烯/二氧化钛光调制器，可实现超快切换和低电压状态

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-15 DOI: 10.1109/TNANO.2024.3353789

Wisut Supasai;Suksan Suwanarat;Mongkol Wannaprapa;Papichaya Chaisakul;Apirat Siritaratiwat;Chavis Srichan;Nuttachai Jutong;Sorawit Narkglom;Chayada Surawanitkun

{"title":"Broadband Graphene/TiO2 Optical Modulator Based on Hybrid Plasmonic Waveguide for Ultrafast Switching and Low-Voltage State","authors":"Wisut Supasai;Suksan Suwanarat;Mongkol Wannaprapa;Papichaya Chaisakul;Apirat Siritaratiwat;Chavis Srichan;Nuttachai Jutong;Sorawit Narkglom;Chayada Surawanitkun","doi":"10.1109/TNANO.2024.3353789","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3353789","url":null,"abstract":"This work presents a novel contribution to graphene/TiO\u00002\u0000 electro-optical modulators based on silicon-on-silica waveguide with a hybrid plasmonic waveguide to achieve ultrafast switching and low-voltage states. Waveguide structure consists of a rectangular silicon core covered by a high relative permittivity TiO\u00002\u0000 dielectric layer with two layers of graphene, air-clad, and silica lower cladding. Effective refractive indices can be tailored to support the propagation of the transverse magnetic mode with a suitable design related to an electro-absorption modulator for simulation results. Modulation depth and bandwidth were enhanced by the waveguide width and dielectric thickness, respectively. Maximum and minimum absorption depths at the driving voltage states can determine modulators. The simulation produced the highest efficient modulator with high speed at 3 dB bandwidth of 93.7 GHz using a low energy consumption of 210.6 fJ/bit, a small footprint (24 μm\u00002\u0000), and a broad operating spectrum range from 1310 to 1550 nm. This is because the physical process acts according to the modulator at the Fermi energy of graphene and the structure of the waveguide. These modulators can have practical applications due to their distinctive advantages, including a small device footprint, low voltage operation, ultrafast modulation switching across a broad wavelength range, and low-energy operation.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"114-123"},"PeriodicalIF":2.4,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10399839","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139654391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA 掺杂 ZnFe2O4 的 PVA 互层金属半导体导纳分析中的负电容研究

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-01-12 DOI: 10.1109/TNANO.2024.3353379

Jaafar Abdulkareem Mustafa Alsmael;Serhat Orkun Tan

{"title":"Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA","authors":"Jaafar Abdulkareem Mustafa Alsmael;Serhat Orkun Tan","doi":"10.1109/TNANO.2024.3353379","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3353379","url":null,"abstract":"In this work, Al/p-Si structures with (ZnFe\u00002\u0000O\u00004\u0000− PVA) interfacial film, which is grown by the electrospinning-method, have been analyzed by using impedance measurements in the wide frequency interval (2 kHz–2 MHz) at both side of polarization (±4 V). Some fundamental important electrical parameters such as intercept-voltage (V\u0000o\u0000), the concentration of acceptor-atoms (N\u0000A\u0000), depletion layer width (W\u0000d\u0000), and barrier-height (Φ\u0000B\u0000) were extracted from intercept and slope of the 1/C\u00002\u0000 vs V plot in the inversion region for each frequency. It has been observed that parameters such as the presence of surface states (N\u0000SS\u0000), relaxation or lifetimes (τ), organic interlayer, dipoles or surface polarization in the inversion and depletion regions, especially at low and moderate frequencies, are obviously dependent on the frequency and applied biases. The voltage and frequency dependence profile of the series resistor (R\u0000S\u0000), N\u0000SS,\u0000 and also τ were determined from the Nicollian-Brews method and Nicollian-Goetzberger conductance technique, respectively. The magnitude of N\u0000SS\u0000 and the values of τ were calculated from the maximum value of (G\u0000P\u0000/ω) related to the frequency for different voltage values. The negative capacitance (NC) at about zero biases and the source of the two incongruous peaks in the depletion and accumulation zones were also discussed. While the first peak in the depletion region was a result of N\u0000SS\u0000, the second peak in the depletion region was caused by the effect of R\u0000S\u0000.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"102-108"},"PeriodicalIF":2.4,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139572650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0