IEEE Transactions on Nanotechnology最新文献

{"title":"Silicon-Germanium Ultrashort-Gate Transistor Performances by Electrical-Thermal Simulations","authors":"Shiun Yamakiri;Takaya Sugiura;Kenta Yamamura;Yuta Watanabe;Nobuhiko Nakano","doi":"10.1109/TNANO.2024.3389209","DOIUrl":"10.1109/TNANO.2024.3389209","url":null,"abstract":"As a replacement for conventional silicon (Si), the germanium (Ge) materials have attracted interest because Ge provides larger carrier mobility and is advantageous for high-speed switching. In this study, the silicon-germanium (SiGe) ultrashort-gate transistor performances were studied using electrical-thermal analysis. The material properties of SiGe can be modified by regulating the mole fraction in Si\u0000<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>\u0000 Ge\u0000<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>\u0000, and the different material characteristics affect the nanoscale transistor performance because channel regulation strongly depends on the bandgap energy. This study aims to reveal the structural and material designs of SiGe transistors to ensure sufficient performance and reliability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"361-367"},"PeriodicalIF":2.4,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140609611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"21T Ternary Full Adder Based on Capacitive Threshold Logic and Carbon Nanotube FETs","authors":"Marzieh Hashemipour;Reza Faghih Mirzaee;Keivan Navi","doi":"10.1109/TNANO.2024.3386825","DOIUrl":"10.1109/TNANO.2024.3386825","url":null,"abstract":"The reduction in transistor count has long been a big challenge and an ongoing objective in the design of Ternary Full Adders (TFAs). Capacitive Threshold Logic (CTL) is a well-known logic style requiring a small number of transistors to implement a circuit. This paper presents a novel CTL TFA that utilizes only 21 transistors, three of which function as capacitors. Reducing the number of transistors can achieve a more compact adder cell with fewer internal wires. Simulations by HSPICE and 32nm CNFET technology demonstrate promising results for the new TFA compared to previous competitors. It produces the output carry at the fastest speed and also utilizes six fewer transistors and three fewer nets than its closest competitor with the fewest elements. When a comprehensive evaluation factor including delay, power, and area is considered, the proposed design exhibits a performance superiority of 45.1% and 21.4% compared to the previous top-performing CTL and non-CTL designs, respectively.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"338-345"},"PeriodicalIF":2.4,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"p-WSe2 Nanosheets/ n-WS2 Quantum Dots/p-Si (2D-0D-3D) Mixed-Dimensional Multilayer Heterostructures Based High-Performance Broadband Photodetector","authors":"S. Chowdhury;Abhinav Pratap Singh;S. Jit;P. Venkateswaran;D. Somvanshi","doi":"10.1109/TNANO.2024.3385834","DOIUrl":"10.1109/TNANO.2024.3385834","url":null,"abstract":"In this work, we have investigated the performance of a p-WSe\u0000₂\u0000 Nanosheets (NSs)/n-WS\u0000₂\u0000 Quantum dots (QDs)/p-Si (2D-0D-3D) based mixed-dimensional (MD) multilayer heterostructure photodetector with Ag as top contact electrode. The WSe\u0000₂\u0000 NSs and WS\u0000₂\u0000 QDs are synthesized by solvothermal and hydrothermal synthesis methods, respectively. The proposed photodetector exhibits a broad photo response over 300 nm (ultraviolet) to 1100 nm (infrared) with the maximum responsivity (R) of 2.14×10\u0000²\u0000 A/W, detectivity (D\u0000^*\u0000) of 2.35×10\u0000¹³\u0000 Jones, and external quantum efficiency (EQE) of 82710% at 322 nm and -3 V reverse bias voltage. The measured rise time and fall time of the device are 24 ms and 21 ms, respectively. Our proposed p-WSe\u0000₂\u0000 NS/n-WS\u0000₂\u0000 QDs/p-Si (2D-0D-3D) photodetector is shown to have nearly ∼ 8 times higher values of R and EQE, 17 times higher value of D\u0000^*\u0000, 34 times lower value of the rise time and 38 times lower value of the fall time as compared to the respective performance parameters of the n-WS\u0000₂\u0000 QDs/p-Si (0D-3D) MD heterojunction photodetector.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"346-351"},"PeriodicalIF":2.4,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Levenberg-Marquardt Validation of Multiple Fano Resonances in Plasmonic Cavity for Adrenal/Breast Cancer Detection","authors":"Sajjan Kumar Jha;Gaurav Varshney;Rabindra Kumar","doi":"10.1109/TNANO.2024.3385854","DOIUrl":"10.1109/TNANO.2024.3385854","url":null,"abstract":"A technique of slanting MIM plasmonic waveguide-based cavity is numerically studied and implemented. Initially, the proposed rectangular cavity is proficient for generating five Breit-Wigner and six Fano resonances. The polygonal cavity is designed out of rectangular cavity by slanting one of its edge that reshaped the Breit-Wigner resonances into Fano profile with remaining resonances unaffected. The polygonal cavity obtains total eleven Fano resonances by coupling with an inclined split waveguide. The influence of slanting on reshaping of resonances is studied with orthogonality of modes and overlap integration has been calculated. The Fano resonances in the transmittance spectrum are individually validated with Fano profile formula and the corresponding Fano shape parameter are computed. The validation is done with the help of Levenberg-Marquardt algorithm and the goodness of fits are calculated. The best performance parameters of Fano resonances are expressed as operating wavelength \u0000<inline-formula><tex-math>${bm{lambda }} = 450 - 1800 {text{nm}}$</tex-math></inline-formula>\u0000, sensitivity \u0000<inline-formula><tex-math>$( {bm{S}} ) = 1643 {text{nm}}/{rm{RIU}}$</tex-math></inline-formula>\u0000, full-width, half maxima \u0000<inline-formula><tex-math>$( {{bm{FWHM}}} ) = 0.76 {text{nm}}$</tex-math></inline-formula>\u0000, quality factor (\u0000<inline-formula><tex-math>${bm{Q}}) = 743.77$</tex-math></inline-formula>\u0000 and figure of merit \u0000<inline-formula><tex-math>$( {{bm{FOM}}} ) = 738.69 {rm{RIU}}^{ - 1}$</tex-math></inline-formula>\u0000. The proposed device is further studied for the detection of certain cancer types including Adrenal cancer, Breast Type1 cancer and Breast Type2 cancer. The maximum sensitivity in case of detection of all the three cancer types yielded out to be \u0000<inline-formula><tex-math>${bm{S}} = 1642.857 {text{nm}}/{rm{RIU}}$</tex-math></inline-formula>\u0000. The other sensing performance parameter called figure of merit is calculated to be \u0000<inline-formula><tex-math>${bm{FOM}} = 610.90 {rm{RI}}{{{rm{U}}}^{ - 1}}$</tex-math></inline-formula>\u0000 for Adrenal and Breast Type 1 and \u0000<inline-formula><tex-math>${bm{FOM}} = 671.99 {rm{RI}}{{{rm{U}}}^{ - 1}}$</tex-math></inline-formula>\u0000 for Breast Type 2 cancers.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"352-360"},"PeriodicalIF":2.4,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amplitude Modulator Design Using Series Graphene Transmission Lines in Terahertz Frequency Band","authors":"Saughar Jarchi","doi":"10.1109/TNANO.2024.3385507","DOIUrl":"10.1109/TNANO.2024.3385507","url":null,"abstract":"In this paper, a layered transmission line based on graphene is designed and investigated to provide amplitude modulation in the low terahertz frequency band. The proposed primary structure is composed of a graphene transmission line on a dielectric layer, as substrate, loaded by a transverse graphene strip and backed by a continuous graphene sheet, as ground plane. The intermediate graphene strip is electrically isolated from the input and output ports. The structure is first investigated by full-wave simulation method, with various chemical potentials of graphenes, and the ABCD matrices are extracted. Then, applying the analytical method based on the ABCD matrices, the scattering parameters of the cascade of several segments of the proposed primary transmission line are investigated, and the promising configuration for the amplitude modulator is derived. It is shown that, variations of signal transmission required by amplitude modulation performance are achieved by cascading six segments of the proposed transmission line and changing the chemical potential of graphene parts. The designed amplitude modulator is investigated, and high modulation depth of nearly 100% and flat response in 3.4–3.8 THz frequency band is achieved.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"323-328"},"PeriodicalIF":2.4,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications","authors":"Tian-Tong Cheng;Qiang Li;Yu-Xi Yang;Zhi-Wei Zheng","doi":"10.1109/TNANO.2024.3384968","DOIUrl":"10.1109/TNANO.2024.3384968","url":null,"abstract":"As the negative capacitance field-effect transistors (NCFETs) have extensive application prospects and advanced technological support in the analog/radio-frequency (RF) domains, it is important to investigate the theoretical performances of the NCFETs with various feasible structures. In this article, utilizing the TCAD simulation tool and an experimentally calibrated ferroelectric model, we perform a comparative evaluation of MFMIS and MFIS, two prominent NCFET configurations, with regard to their DC/static characteristics and analog/RF performances. Through simulations involving varying ferroelectric thicknesses, it is seen that in comparison with the MFIS device, the MFMIS device demonstrates superior static performances in on-state current (\u0000<italic>I</i>\u0000_ON\u0000), off-state current (\u0000<italic>I</i>\u0000_OFF\u0000) and subthreshold swing (\u0000<italic>SS</i>\u0000), and the underlying physical effects of these results have also been uncovered. Furthermore, we extracted the device-level analog/RF figures of merits (FoMs) like transconductance (\u0000<italic>g</i>\u0000_m\u0000), gate capacitance (\u0000<italic>C</i>\u0000_gg\u0000), output conductance (\u0000<italic>g</i>\u0000_d\u0000), cutoff frequency (\u0000<italic>f</i>\u0000_T\u0000), transconductance generation factor (\u0000<italic>TGF</i>\u0000), transconductance frequency product (\u0000<italic>TFP</i>\u0000), etc from the two structures. It is found that the MFMIS device still possesses advantages in these parameters, and as the thickness of ferroelectric layer increases, the advantages compared to the MFIS device become more pronounced. The investigations in this article indicate that the MFMIS NCFET exhibits superior adaptability and performances in enhancing the analog/RF capabilities of conventional devices as compared with the MFIS device.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"317-322"},"PeriodicalIF":2.4,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140603422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene Oxide Paper as a Lightweight, Thin, and Controllable Microwave Absorber for Millimeter-Wave Applications","authors":"Agata Romanowska;Stefan Marynowicz;Tomasz Strachowski;Konrad Godziszewski;Yevhen Yashchyshyn;Adrian Racki;Magdalena Baran;Tymoteusz Ciuk;Adrian Chlanda","doi":"10.1109/TNANO.2024.3385092","DOIUrl":"10.1109/TNANO.2024.3385092","url":null,"abstract":"The production and verification of microwave absorbers are a subject of high priority. These are due to the fast development of telecommunication technologies and the need to reduce electromagnetic pollution. Such materials are implementable in multiple industries, including military, medical, and laboratory equipment. One should remember that the desired material should exhibit a high total shielding effectiveness \u0000<italic>SE <inline-formula><tex-math>$_{T}$</tex-math></inline-formula></i>\u0000 and controllable performance properties. In this work, an ultrathin graphene oxide paper is fabricated and verified as a wide-range, controllable microwave absorber. Stepwise (100 \u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000 C – 200 \u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C – 300 \u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C) thermally reduced G-Flake graphene oxide paper of 4.95 μm thickness revealed the conductivity of 1.86 S/cm. A mild level of reduction was proven with combustion elemental analysis, resulting in a 22.4 oxygen percentage (50.9 % before the reduction). Raman spectroscopy suggested the limitation of Stone-Wales defects after heat treatment. Microwave absorption was measured in the W-band frequency region, and the \u0000<italic>SE<inline-formula><tex-math>$_{T}$</tex-math></inline-formula>/t</i>\u0000 parameter reached 606 dB/mm for a c.a. 5-μm-thick individual reduced paper sheet. The controlled increase in conductivity resulted in conduction losses, and the occurrence of pores enabled scattering, while the absorption remained the primary shielding mechanism.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"329-337"},"PeriodicalIF":2.4,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Non-enzymatic Glucose Sensors of ZnO Nanorods by Adsorb Pt Nanoparticles","authors":"Yi-Hsing Liu;Sheng-Joue Young;Cheng-Yen Hsien;Yen-Lin Chu;Zi-Hao Wang;Shoou-Jinn Chang","doi":"10.1109/TNANO.2024.3382635","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3382635","url":null,"abstract":"The study proposed simple methods with hydrothermal method and physical vapor deposition coating technique (sputter coater) to prepare Pt nanoparticles attach on ZnO nanorods, and then applied in non-enzymatic glucose sensor. Glucose sensing is tested using electrochemical measurement, including cyclic voltammetry and amperometry method. In cyclic voltammetry measurement, the sensitivity of ZnO and Pt/ZnO NRs sensor are 5.0273 and 32.0527 μA/cm\u0000²\u0000-mM when an applied potential at 0.1 V, which is carried out different glucose concentration from 0 mM to 8 mM. For observing the stability and selectivity, we were used the amperometry method to measure various glucose concentration and interfering species (ascorbic acid and uric acid). It is demonstrated that the Pt/ZnO NRs sensor exhibited excellent stability and anti-interference performance.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"303-310"},"PeriodicalIF":2.4,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140544184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance","authors":"Li-Cheng Teng;Yu-Che Huang;Shu-Jui Chang;Shin-Yuan Wang;Yu-Hsien Lin;Chao-Hsin Chien","doi":"10.1109/TNANO.2024.3407817","DOIUrl":"10.1109/TNANO.2024.3407817","url":null,"abstract":"In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5 nm HZO utilizing Molybdenum (Mo) as the electrodes. By proposing a novel atomic layer deposition (ALD) scheme, we overcome the challenge of oxidation of the lower Mo electrode; a 2 nm HZO deposited by thermally enhanced ALD followed by a 3 nm HZO deposited by plasma enhanced ALD. The fabricated sample demonstrated a 2Pr value of 38.5 μC/cm\u0000²\u0000 at an operating voltage of 2 V. Furthermore, in endurance testing, the sample maintained a 2Pr value of 36.9 μC/cm\u0000²\u0000 even after 10\u0000¹⁰\u0000 cycles (△2Pr/2Pr\u0000_pristine\u0000 ≈ 7% from pristine to 10\u0000¹⁰\u0000 cycles). With a maximum process temperature of 400 °C, our approach thereby meets the stringent requirement of Back-End-of-Line (BEOL) integration.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"474-477"},"PeriodicalIF":2.1,"publicationDate":"2024-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141196645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of Dye-Sensitized Solar Cell With Modification of Photoanode by g-C3N4/NiS/TiO2 Nanofibers and Its Performance Under Outdoor and Indoor Illumination","authors":"Yu-Hsun Nien;Shang-Wen Zhuang;Jung-Chuan Chou;Chih-Hsien Lai;Po-Hui Yang;Po-Yu Kuo;Po-Feng Chen;Yu-Han Huang","doi":"10.1109/TNANO.2024.3407375","DOIUrl":"10.1109/TNANO.2024.3407375","url":null,"abstract":"In this study, a novel composite material, g-C\u0000₃\u0000N\u0000₄\u0000 - NiS (CN-NiS), was synthesized by the hydrothermal method through the combination of graphitic carbon nitride (g-C\u0000₃\u0000N\u0000₄\u0000) and nickel sulfide (NiS). Furthermore, an electrospinning technique was employed to incorporate CN-NiS into titanium dioxide (TiO\u0000₂\u0000) nanofibers, resulting in the formation of a new type of composite nanofibers (CN-NiS/TiO\u0000₂\u0000 NFs) to be used as a photoanode in dye-sensitized solar cells (DSSCs). The nanomaterial was characterized, and the charge recombination and performance of the device after modifying the photoanode were evaluated. Firstly, the photovoltaic performance of the modified DSSCs under outdoor illumination (AM 1.5G) was examined. The photoanode with CN-NiS/TiO\u0000₂\u0000 NFs achieved an 6.65% photoelectric conversion efficiency (PCE), demonstrating significant improvement compared to the unmodified DSSCs. Additionally, the PCE of CN-NiS/TiO\u0000₂\u0000 NFs photoanode under indoor illumination (T5 fluorescent lamp) reached a maximum of 25.10%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"427-434"},"PeriodicalIF":2.4,"publicationDate":"2024-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141196633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}