IEEE Transactions on Nanotechnology最新文献_第9页

Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness 模拟硅悬键逻辑系统中的带电缺陷以评估逻辑稳健性

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-05 DOI: 10.1109/TNANO.2024.3372946

Samuel S. H. Ng;Jeremiah Croshaw;Marcel Walter;Robert Wille;Robert Wolkow;Konrad Walus

{"title":"Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness","authors":"Samuel S. H. Ng;Jeremiah Croshaw;Marcel Walter;Robert Wille;Robert Wolkow;Konrad Walus","doi":"10.1109/TNANO.2024.3372946","DOIUrl":"10.1109/TNANO.2024.3372946","url":null,"abstract":"Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of \u0000<inline-formula><tex-math>$mathbf {32times 10^{3}}, {mathbf{nm}}^mathbf {2}$</tex-math></inline-formula>\u0000—orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the \u0000<inline-formula><tex-math>$mathbf {10}, {mathbf{nm}}$</tex-math></inline-formula>\u0000 scale and beyond. The formulation is validated by implementing it into SiQAD's simulation engine and computationally reproducing experiments on multiple defect types, revealing a high level of accuracy. The new capability is applied towards studying the tolerance of several established logic gates against the introduction of a single nearby defect to establish the corresponding minimum required clearance. These findings are compared against existing metrics to form a foundation for logic robustness studies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"231-237"},"PeriodicalIF":2.4,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimentally Verified Effective Doping Model for Lactate and Troponin OFET Biosensors Using Machine Learning Algorithm 利用机器学习算法对乳酸盐和肌钙蛋白 OFET 生物传感器的有效掺杂模型进行实验验证。

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-03 DOI: 10.1109/TNANO.2024.3396505

Sameh O. Abdellatif;Hana Mosalam;Salma A. Hussien

{"title":"Experimentally Verified Effective Doping Model for Lactate and Troponin OFET Biosensors Using Machine Learning Algorithm","authors":"Sameh O. Abdellatif;Hana Mosalam;Salma A. Hussien","doi":"10.1109/TNANO.2024.3396505","DOIUrl":"10.1109/TNANO.2024.3396505","url":null,"abstract":"As the interest in human health and customized medicine has grown recently, many researchers' investigations have concentrated on biosensors to develop a cost-effective device for sensing different medical parameters. Among the wide range of organic electronic devices, organic field effect transistor (OFET) has been used in manufacturing flexible biosensors due to their light weight, flexibility, and lower energy usage. In this study, a carrier transport electronic model, verified with experimental data, simulates the biosensing process in two different biosensors: lactate and troponin. Initially, a random forest machine learning model was used to optimize the OFET device with a new figure of merit. Consequently, the sensor's sensitivity and limit of detection were calculated. Two active layers were investigated: polyaniline and pentacene, where the polyaniline showed better sensitivity for lactate biosensor 220 (nM)\u0000-1\u0000 and troponin 484 (g/ml)\u0000-1\u0000. Moreover, the polyaniline recorded nearly ten times lower power consumption because of its extremely low threshold voltage of -170 mV.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"415-421"},"PeriodicalIF":2.4,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140834681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors 调整 IWO 薄膜晶体管上 HfAlOx 的顺序和浓度对电气性能和可靠性的影响

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-03 DOI: 10.1109/TNANO.2024.3396502

Yi-Xuan Chen;Fu-Jyuan Li;Yi-Lin Wang;Meng-Chien Lee;Hui-Hsuan Li;Yu-Hsien Lin;Chao-Hsin Chien

{"title":"Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors","authors":"Yi-Xuan Chen;Fu-Jyuan Li;Yi-Lin Wang;Meng-Chien Lee;Hui-Hsuan Li;Yu-Hsien Lin;Chao-Hsin Chien","doi":"10.1109/TNANO.2024.3396502","DOIUrl":"10.1109/TNANO.2024.3396502","url":null,"abstract":"We investigated the electrical and material characteristics of atomic layer deposition (ALD) deposition with different sequences and concentrations of HfAlO\u0000x\u0000 in Indium-Tungsten-Oxide thin film transistors (IWO-TFTs). Under the 1A10H case, we observed the best electrical properties, with threshold voltage (Vt) closest to 0 V, Ion/Ioff value of approximately 6.7 × 107, subthreshold swing (SS) of 95 mV/dec, smaller interface trap density (Nit) of 5.7 × 1012 cm\u0000−2\u0000, and superior immunity to stress-induced degradation. The X-ray photoelectron spectroscopy (XPS) results provided insights into the stability of the interface between the gate dielectric layer and the channel layer. Specifically, the 1A10H conditions exhibited a more stable interface with fewer defects. Furthermore, the choice of HfO\u00002\u0000 as the interface layer material between HfAlO\u0000x\u0000 and IWO, compared to Al\u00002\u0000O\u00003\u0000, demonstrated superior performance for different Hf/Al sequence combinations. These findings offer promising directions for enhancing the stability of IWO-TFTs through improvements in the interface between the channel layer and the gate dielectric layer.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"422-426"},"PeriodicalIF":2.4,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140834766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors 二维单元素 (X-enes) 扶手纳米带肖特基势垒场效应晶体管的性能比较

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-01 DOI: 10.1109/TNANO.2024.3395986

Rajesh C. Junghare;Ganesh C. Patil

{"title":"Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors","authors":"Rajesh C. Junghare;Ganesh C. Patil","doi":"10.1109/TNANO.2024.3395986","DOIUrl":"10.1109/TNANO.2024.3395986","url":null,"abstract":"In this work, comprehensive analysis of Schottky barrier (SB) field effect transistors (FETs) having 2D mono-elemental (X-enes) nanoribbon (NR) with width of 10 dimers along the armchair direction as a channel material has been carried out. The multi-scale approach used for simulating the hydrogen passivated X-ene NR SBFETs consists of density functional theory (DFT), Wannier function based tight binding and the non-equilibrium Green's Function formalism (NEGF). The derived bandgaps for X-enes such as graphene, germanene, phosphorene and silicene are 1.27, 0.379, 1.036 and 0.431 eV respectively. To incorporate the effect of band-bending at the metal-X-ene interface the modification in the conventional multi-scale approach has also been proposed. To mimic the effect of band bending at metal-X-ene interface the schemes proposed in the model are, addition of equivalent channel potential energy in the Hamiltonian matrix and the addition of fixed charges in initial charge profile. Further, the impact of SB width, Fermi level pinning and the scattering on the device performance has also been explored. The results show that the on-state drive current-to-off-state leakage current ratio in the case of graphene and phosphorene SBFETs is up-to the order ∼10\u00007\u0000 whereas for silicene and germanene SBFETs it is in the order of ∼10\u00003\u0000.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"408-414"},"PeriodicalIF":2.4,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140834765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reverse Charge Injection Dual-Gate Synaptic Transistors for Effective Weight Update 反向电荷注入双栅突触晶体管实现有效的重量更新

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-02-29 DOI: 10.1109/TNANO.2024.3371582

Donghyun Ryu;Junsu Yu;Woo Young Choi

{"title":"Reverse Charge Injection Dual-Gate Synaptic Transistors for Effective Weight Update","authors":"Donghyun Ryu;Junsu Yu;Woo Young Choi","doi":"10.1109/TNANO.2024.3371582","DOIUrl":"10.1109/TNANO.2024.3371582","url":null,"abstract":"Reverse charge injection (RCI) dual-gate synaptic transistors and their effective weight update method are proposed. First, the structural features of the proposed RCI dual-gate synaptic transistors are discussed in comparison with our previous work. Second, the weight update efficiency of the proposed synaptic transistors is discussed by analyzing the coupling capacitance components, which determine the electric field distribution across the tunneling and blocking oxides. Consequently, the program voltage and pulse width are reduced by 56.4% and 99.0%, respectively. The power consumption for the weight update operation is lowered by 99.6%. In addition, the anti-back-tunneling effect resulting from the low erase voltage is discussed. Third, the weight update conditions of the proposed synaptic transistors are optimized by adjusting the bottom gate length. Fourth, the proposed synaptic transistors implement 16 stable states (32 states with inhibitory synapses) and a fairly linear weight update by using both the increment step pulse program (ISPP) and increment step pulse erase (ISPE). Finally, the PGM/ERS operation of target cell and inhibit operation of surrounding cells are verified in RCI dual-gate synaptic transistor-based 2 × 2 NOR-type array.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"217-222"},"PeriodicalIF":2.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140006214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical Investigation of Nanoresonator Based Ultra Narrow-Band Photonic Filters 基于纳米谐振器的超窄带光子滤波器的数值研究

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-02-27 DOI: 10.1109/TNANO.2024.3370717

R. Rajasekar

引用次数: 0

Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters 通过调整物理参数优化基于互补碳纳米管场效应晶体管的纳米级运算放大器

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-02-27 DOI: 10.1109/TNANO.2024.3370098

Hao Ding;Lan Chen;Wentao Huang

{"title":"Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters","authors":"Hao Ding;Lan Chen;Wentao Huang","doi":"10.1109/TNANO.2024.3370098","DOIUrl":"10.1109/TNANO.2024.3370098","url":null,"abstract":"Carbon nanotube field-effect transistors (CNFETs) possess high current density and carrier mobility, enabling high intrinsic gains below the 20-nm technology node. Thus, they demonstrate superior performance compared to traditional silicon analog integrated circuits (ICs). Here, the relevant parameters of a CNFET in analog IC designs were analyzed and simulated, elucidating the influence of physical parameters on the CNFET device. All simulations were performed at technology nodes smaller than 22 nm. To evaluate the performance of a CNFET analog circuit, the g\u0000m\u0000/I\u0000d\u0000 method for CNFET was employed, and a nanoscale two-stage operational amplifier was designed using complementary CNFET technology with a channel length of 14 nm. In addition, the impact of CNFET's physical parameters on circuit performance were examined. Our results showcased the advantages of CNFET analog circuits over traditional silicon-based analog circuits, as well as the significant influence of CNFET physical parameters on circuit performance. Consequently, this study provides a reference for productive CNFET technologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"180-187"},"PeriodicalIF":2.4,"publicationDate":"2024-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140006157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient Parallel Stochastic Computing Multiply-Accumulate (MAC) Technique Using Pseudo-Sobol Bit-Streams 使用伪索波尔比特流的高效并行随机计算乘积 (MAC) 技术

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-02-22 DOI: 10.1109/TNANO.2024.3368628

Aokun Hu;Wenjie Li;Dongxu Lyu;Guanghui He

{"title":"Efficient Parallel Stochastic Computing Multiply-Accumulate (MAC) Technique Using Pseudo-Sobol Bit-Streams","authors":"Aokun Hu;Wenjie Li;Dongxu Lyu;Guanghui He","doi":"10.1109/TNANO.2024.3368628","DOIUrl":"10.1109/TNANO.2024.3368628","url":null,"abstract":"Stochastic computing (SC) has emerged as a promising technique for reducing hardware costs in various applications, particularly in multiply-accumulate (MAC) intensive tasks such as neural networks. However, conventional SC still faces challenges in terms of achieving high accuracy and throughput. To enhance the precision, Sobol bit-stream has been widely adopted in SC. On the other hand, the throughput is frequently increased by means of parallel computing architecture. Nevertheless, directly increasing parallelism will incur significant additional hardware costs. In this paper, we propose Pseudo-Sobol bit-streams based on which an efficient parallel stochastic computing architecture for MAC operations is further developed. The proposed design leverages the properties of Pseudo-Sobol bit-streams and integrates the computation and conversion units to improve hardware efficiency. We evaluate the effectiveness of our design in two typical applications, general matrix multiplication (GEMM) and convolution. Experimental results show that our proposed design is capable of increasing energy efficiency by up to 36% and area efficiency by up to 70%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"170-179"},"PeriodicalIF":2.4,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ASIC Design of Nanoscale Artificial Neural Networks for Inference/Training by Floating-Point Arithmetic 利用浮点运算推理/训练纳米级人工神经网络的 ASIC 设计

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-02-20 DOI: 10.1109/TNANO.2024.3367916

Farzad Niknia;Ziheng Wang;Shanshan Liu;Pedro Reviriego;Ahmed Louri;Fabrizio Lombardi

{"title":"ASIC Design of Nanoscale Artificial Neural Networks for Inference/Training by Floating-Point Arithmetic","authors":"Farzad Niknia;Ziheng Wang;Shanshan Liu;Pedro Reviriego;Ahmed Louri;Fabrizio Lombardi","doi":"10.1109/TNANO.2024.3367916","DOIUrl":"10.1109/TNANO.2024.3367916","url":null,"abstract":"Inference and on-chip training of Artificial Neural Networks (ANNs) are challenging computational processes for large datasets; hardware implementations are needed to accelerate this computation, while meeting metrics such as operating frequency, power dissipation and accuracy. In this article, a high-performance ASIC-based design is proposed to implement both forward and backward propagations of multi-layer perceptrons (MLPs) at the nanoscales. To attain a higher accuracy, floating-point arithmetic units for a multiply-and-accumulate (MAC) array are employed in the proposed design; moreover, a hybrid implementation scheme is utilized to achieve flexibility (for networks of different size) and comprehensively low hardware overhead. The proposed design is fully pipelined, and its performance is independent of network size, except for the number of cycles and latency. The efficiency of the proposed nanoscale MLP-based design for inference (as taking place over multiple steps) and training (due to the complex processing in backward propagation by eliminating many redundant calculations) is analyzed. Moreover, the impact of different floating-point precision formats on the final accuracy and hardware metrics under the same design constraints is studied. A comparative evaluation of the proposed MLP design for different datasets and floating-point precision formats is provided. Results show that compared to current schemes found in the technical literatures, the proposed design has the best operating frequency and accuracy with still good latency and energy dissipation.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"208-216"},"PeriodicalIF":2.4,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the γ-Radiation Dosimetry Using a Layered Metamaterial Structure Comprising FTO and Blue Glass 利用由 FTO 和蓝玻璃组成的层状超材料结构进行γ 辐射剂量测定

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-02-09 DOI: 10.1109/TNANO.2024.3364254

E. M. Sheta;Azrul Azlan Hamzah;Umi Zulaikha Mohd Azmi;Ishak Mansor;Pankaj Kumar Choudhury

引用次数: 0