IEEE Transactions on Nanotechnology最新文献

sETNM: Soft-Error-Tolerant Nonvolatile MRAM for Space Applications 用于空间应用的软容错非易失性MRAM

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-10-02 DOI: 10.1109/TNANO.2025.3617228

Govind Prasad;Sankalp Tattwadarshi Swain

引用次数: 0

Oblique Angle Deposition of Slanted TiO2 Columnar for UV Photodetector Application 倾斜TiO2柱状物的斜角度沉积在紫外光电探测器中的应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-10-01 DOI: 10.1109/TNANO.2025.3616005

Salam Surjit Singh;Naorem Khelchand Singh;Sapam Bikesh;Biraj Shougaijam

{"title":"Oblique Angle Deposition of Slanted TiO2 Columnar for UV Photodetector Application","authors":"Salam Surjit Singh;Naorem Khelchand Singh;Sapam Bikesh;Biraj Shougaijam","doi":"10.1109/TNANO.2025.3616005","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3616005","url":null,"abstract":"With the advancement of optoelectronic technology, a new evaluation of photodetectors’ (PDs’) performance is necessary for next-generation sensing applications. This study uses the e-beam evaporation approach to produce slanted titanium dioxide columnar (TiO2-COL) on the Si substrate, with a constant deposition angle of ∼ 61°. The morphology, structural, and optical properties of the fabricated TiO2-COL samples were examined. Successful growth of the slanted TiO2-COL structure is demonstrated by field emission scanning electron microscopy (FE-SEM). Furthermore, XRD analyses reveal that TiO2-COL has an amorphous nature. Optical characterization reveals that the fabricated sample exhibits high absorption intensity in the UV region, for demonstrating a potential UV photodetector application. The TiO2-COL based PD that was deposited obliquely displayed I-V curves that demonstrated a distinct photovoltaic mode and an extremely low dark current of a few nanoamperes. Moreover, at ∼ 320 nm, the device exhibits a self-powered UV light response with a responsivity value of around ∼ 1.3 mA/W. In addition, this TiO2-COL based photodetector device demonstrates a remarkable detectivity and noise-equivalent-power (NEP) and rise time/fall time of ∼ 4.63 × 1010 Jones, ∼ 6.06 × 10−11 W and ∼ 0.305/0.184 sec, respectively, at −0.1 V. Therefore, this novel idea of a slanted TiO2-COL structure promotes effective light management and offers a reliable route for creating Low-powered UV PDs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"489-494"},"PeriodicalIF":2.1,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145255873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing 边缘计算混合门控循环单元的忆阻电路演示

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-25 DOI: 10.1109/TNANO.2025.3614198

Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang

{"title":"Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing","authors":"Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang","doi":"10.1109/TNANO.2025.3614198","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3614198","url":null,"abstract":"In industrial IoT and distributed computing environments, edge computing devices empowered by AI have seen increasing deployment in large-scale scenarios, thereby accelerating the demand for time-series data processing. The gated recurrent unit (GRU) outperforms conventional artificial neural networks (ANNs) in tasks such as natural language processing, speech recognition, and machine translation, due to its superior capability in modeling long-range dependencies in sequential data. However, the GRU model is limited by its large parameter count and structural complexity, which presents a bottleneck in hardware circuit implementation. To this end, a memristor-based hybrid gated recurrent unit (HGRU) is proposed, which reduces the parameter count to 67% of the original GRU and shortens the single-step computation latency by 50%, while maintaining complete circuit functionality. Finally, the proposed memristor-based HGRU circuit model is evaluated on the MNIST digit recognition and IMDB sentiment analysis tasks, achieving recognition accuracies of 97% and 86.2%, respectively. Under equivalent parameter settings, it achieves runtime reductions of 37% and 52% compared to the standard GRU, thereby significantly enhancing computational efficiency.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"481-488"},"PeriodicalIF":2.1,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical Modeling and Analysis of Photoresponse in Graphene-Based PIN Junction Devices 基于石墨烯的PIN结器件光响应的数值模拟与分析

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-16 DOI: 10.1109/TNANO.2025.3610119

Vinod Sharma;Jinal Kiran Tapar;Oves Badami;Naresh Kumar Emani

引用次数: 0

Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors 利用氧化半导体薄膜晶体管的光电突触门可调谐保持

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-25 DOI: 10.1109/TNANO.2025.3602073

Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair

{"title":"Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors","authors":"Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair","doi":"10.1109/TNANO.2025.3602073","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3602073","url":null,"abstract":"In this work we propose a biasing scheme to modulate the retention behavior of oxide semiconductor based optoelectronic synapses. The method has been demonstrated using a zinc oxide thin film transistor, which exhibits persistent photoconductivity to UV light. The application of a negative gate bias prevents the recombination of photo-generated carriers, leading to a negligible decay in the post synaptic current and consequently, the retention time could extend beyond <inline-formula><tex-math>$10^{5}$</tex-math></inline-formula>s. The improvement in memory retention is observed in various synaptic functions such as short-term memory, long-term memory, duration-time-dependent plasticity and paired pulse facilitation. A five fold improvement in the % decay of post synaptic current was observed at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V, when compared to <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V. Furthermore, we have assessed the impact of these improved retention properties on the performance of an artificial neural network, designed for pattern recognition of MNIST handwritten digits. The accuracy decayed drastically with time from 96% to nearly 40% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V whereas it drops to only 94% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"434-438"},"PeriodicalIF":2.1,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Towards Design-Technology Co-Optimization for Nanosheet Transistors With Backside Contact 面向后接触纳米片晶体管的设计与工艺协同优化

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-18 DOI: 10.1109/TNANO.2025.3599842

Shuying Wang;Pengpeng Ren;Yewei Zhang;Mingzhao Yang;Runsheng Wang;Zhigang Ji

引用次数: 0

Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device 用于低功耗突触器件的铁电隧道场效应晶体管的演示

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-04 DOI: 10.1109/TNANO.2025.3595532

Seungwon Go;Sunwoo Lee;Jaekyun Son;Dong Keun Lee;Hyungju Noh;Jae Yeon Park;Seonggeun Kim;Hyunho Ahn;Sihyun Kim;Sangwan Kim

引用次数: 0

Spectral Shift From Near to Far-Field Radiation in Metallic Nanoparticles 金属纳米粒子近场到远场辐射的光谱位移

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-07-25 DOI: 10.1109/TNANO.2025.3592825

Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam

{"title":"Spectral Shift From Near to Far-Field Radiation in Metallic Nanoparticles","authors":"Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam","doi":"10.1109/TNANO.2025.3592825","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3592825","url":null,"abstract":"The interaction between light and metallic nanoparticles, driven by potential applications, requires a comprehensive understanding of the intensity and spectral shift from near-field to far-field radiation. The far-field spectra have received extensive attention, yet significant peak shifts in the near-field are often overlooked by Mie solutions, necessitating full-wave numerical solvers for accurate analysis and thus limiting a deeper understanding of near-field behavior. This work proposes an impedance-based compact solution that harnesses the fundamental relationship of voltage-current and the analogy between a series resonant circuit and the near-field to develop compact models uniquely identifying the fundamental mode near and far-field spectral shifts. The results align closely with Mie solutions in the far-field and full-wave solvers in the near-field, demonstrating a strong agreement highlighting the distance-dependent spectral shift dominating the overall response. The compact, parameter-dependent model offers valuable insights, enabling the exploitation of the distinctive near-field interactions of nanoparticles to design and develop extraordinary solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"407-412"},"PeriodicalIF":2.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hybrid Multi-Level Cell Spin-Orbit Torque Memory for Fast and Robust Memory Operations 用于快速和稳健存储操作的混合多级单元自旋轨道扭矩存储器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-07-02 DOI: 10.1109/TNANO.2025.3585167

Kon-Woo Kwon;Yeongkyo Seo

引用次数: 0

Preparation of Nanofibrous Membranes Containing Carbon Dots Composited With TiO2 Photocatalyst and Their Removal Rate of Methylene Blue Under Visible Light TiO2光催化剂复合碳点纳米纤维膜的制备及可见光下对亚甲基蓝的去除率

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-07-02 DOI: 10.1109/TNANO.2025.3584828

Yu-Hsun Nien;Yu-Ping Wang

{"title":"Preparation of Nanofibrous Membranes Containing Carbon Dots Composited With TiO2 Photocatalyst and Their Removal Rate of Methylene Blue Under Visible Light","authors":"Yu-Hsun Nien;Yu-Ping Wang","doi":"10.1109/TNANO.2025.3584828","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584828","url":null,"abstract":"As the industrialization is improving by way of science and technology in society, water pollution has become increasingly serious. Non-degradable organic matter exists in wastewater, which causes environmental deterioration. In order to solve this problem, we select titanium dioxide (TiO2) as the photocatalyst material with high activity, chemical stability and low cost. However, pure TiO2 has a large band gap (3.2 eV) and can only be activated under ultraviolet (UV) light. Therefore, TiO2 has to be modified to fit our requirement. Carbon dots (CDs) have up-conversion and down-conversion photoluminescence and inhibit the recombination of electron-hole pairs, Adding CDs can reduce the band gap width of TiO2, and increase the absorption of visible light significantly, thereby improving photocatalytic efficiency. We use citric acid as the carbon source and urea as the nitrogen source to prepare CDs by using the hydrothermal method, and prepare the CDs/TiO2 composite photocatalyst through the sol-gel method. The CDs/TiO2 composite photocatalyst shows stable and efficient photocatalytic performance for removal of methylene blue (MB), with a removal rate of 95.34%. In order to reuse the CDs/TiO2 composite photocatalyst powder, we use electrospinning technology to combine CDs/TiO2 composite photocatalyst with nylon 6,6 nanofibrous membranes. After three cycle tests, we confirm that it is recyclable and practical, and its removal rate is also increased to 99.39%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"338-346"},"PeriodicalIF":2.1,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0