IEEE Transactions on Nanotechnology最新文献

2024 Index IEEE Transactions on Nanotechnology Vol. 23

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-03 DOI: 10.1109/TNANO.2025.3537416

引用次数: 0

On the Dependability of Bidirectional Encoder Representations from Transformers (BERT) to Soft Errors

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-01-20 DOI: 10.1109/TNANO.2025.3531721

Zhen Gao;Ziye Yin;Jingyan Wang;Rui Su;Jie Deng;Qiang Liu;Pedro Reviriego;Shanshan Liu;Fabrizio Lombardi

{"title":"On the Dependability of Bidirectional Encoder Representations from Transformers (BERT) to Soft Errors","authors":"Zhen Gao;Ziye Yin;Jingyan Wang;Rui Su;Jie Deng;Qiang Liu;Pedro Reviriego;Shanshan Liu;Fabrizio Lombardi","doi":"10.1109/TNANO.2025.3531721","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3531721","url":null,"abstract":"Transformers are widely used in natural language processing and computer vision, and Bidirectional Encoder Representations from Transformers (BERT) is one of the most popular pre-trained transformer models for many applications. This paper studies the dependability and impact of soft errors on BERT implemented with different floating-point formats using two case studies: sentence emotion classification and question answering. Simulation by error injection is conducted to assess the impact of errors on different parts of the BERT model and different bits of the parameters. The analysis of the results leads to the following findings: 1) in both single and half precision, there is a Critical Bit (CB) on which errors significantly affect the performance of the model; 2) in single precision, errors on the CB may cause overflow in many cases, which leads to a fixed result regardless of the input; 3) in half precision, the errors do not cause overflow but they may still introduce a large accuracy loss. In general, the impact of errors is significantly larger in single-precision than half-precision parameters. Error propagation analysis is also considered to further study the effects of errors on different types of parameters and reveal the mitigation effects of the activation function and the intrinsic redundancy of BERT.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"73-87"},"PeriodicalIF":2.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Implications of Dielectric Phases in Ferroelectric HfO$_{2}$ Films on the Performance of Negative Capacitance FETs

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-01-17 DOI: 10.1109/TNANO.2025.3531552

Mayuri Sritharan;Hyunjae Lee;Michael Spinazze;Youngki Yoon

{"title":"Implications of Dielectric Phases in Ferroelectric HfO$_{2}$ Films on the Performance of Negative Capacitance FETs","authors":"Mayuri Sritharan;Hyunjae Lee;Michael Spinazze;Youngki Yoon","doi":"10.1109/TNANO.2025.3531552","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3531552","url":null,"abstract":"Non-homogeneous orthorhombic phase in doped ferroelectric (FE) HfO<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> film presents challenges towards the optimization and performance predictability of negative capacitance (NC) field-effect transistor (FET) performance. We set out to understand the consequences of these dielectric (DE) phases in doped FE-HfO<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> on steep-switching device performance through self-consistent quantum transport simulations. Firstly, we consider a fixed DE phase study to understand how the position, percentage, and number of phase components alter the switching characteristics. Then, to predict device performance variation, we conduct a statistical analysis using a large number of randomly distributed DE phase profiles. We find that DE phases positioned near the center of the potential barrier exert the most significant impact on device performance by lowering the top-of-the-barrier, while those closer to the drain have minimal influence on carrier transport and current. While DE phases in the FE layer degrade the subthreshold swing, they also favorably narrow the hysteretic window, which presents opportunities for optimization in logic devices. Through dimensional scaling and statistical analysis, we demonstrate how optimized performance can be achieved even with large variations in device performance.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"67-72"},"PeriodicalIF":2.1,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improvement of Surface Roughness in SiO2 Thin Films via Deuterium Annealing at 300 °C 300℃氘退火改善SiO2薄膜表面粗糙度的研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-31 DOI: 10.1109/TNANO.2024.3524567

Ju-Won Yeon;Hyo-Jun Park;Eui-Cheol Yun;Moon-Kwon Lee;Tae-Hyun Kil;Yong-Sik Kim;Jun-Young Park

引用次数: 0

On the Importance of the Metal Catalyst Layer to the Performance of CNT-Based Supercapacitor Electrodes 金属催化剂层对碳纳米管超级电容器电极性能的重要性

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-26 DOI: 10.1109/TNANO.2024.3523412

Kingshuk Chatterjee;Vinay Kumar;Prabhat Kumar Agnihotri;Sumit Basu;Nandini Gupta

{"title":"On the Importance of the Metal Catalyst Layer to the Performance of CNT-Based Supercapacitor Electrodes","authors":"Kingshuk Chatterjee;Vinay Kumar;Prabhat Kumar Agnihotri;Sumit Basu;Nandini Gupta","doi":"10.1109/TNANO.2024.3523412","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3523412","url":null,"abstract":"The power and energy densities of a Supercapacitor (SC) is largely dictated by the accessibility of the nano-porous area of the electrode to the electrolyte ions. Carbon nanotubes (CNT) have high electrical conductivity, and more importantly, may be grown into architectures with high surface area. However, this is not easy to achieve in practice. CNT electrodes are fabricated by chemical vapor deposition (CVD), after a metal catalyst layer is coated on a current collector. In this work, the control of the metal catalyst layer, by varying the dip-coating time and CVD process parameters, is shown to be crucial to pore morphology and consequent SC performance. The dip-coating time is adjusted to obtain thin and uniform coating. Further, optimum reduction of the nickel layer with hydrogen is required to produce thin CNTs with adequate inter-tube separation that facilitate ion accessibility within the pores. The height of the CNT forest is also optimized to prevent decrease in specific capacitance due to reduced accessibility. Proper optimization of the process parameters results in a pore morphology conductive to ion diffusion, and simultaneous improvement in energy and power density.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"48-53"},"PeriodicalIF":2.1,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improvement of the Enhancement-Mode GaN MIS-HEMTs by Fluorine Doping in the Dielectric Gate Stack 介质栅层中氟掺杂对增强模式GaN mishemt的改进

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-25 DOI: 10.1109/TNANO.2024.3522371

Tsung-Ying Yang;Mei-Yan Kuo;Jui-Sheng Wu;Yan-Kui Liang;Rahul Rai;Shivendra K. Rathaur;Edward Yi Chang

{"title":"Improvement of the Enhancement-Mode GaN MIS-HEMTs by Fluorine Doping in the Dielectric Gate Stack","authors":"Tsung-Ying Yang;Mei-Yan Kuo;Jui-Sheng Wu;Yan-Kui Liang;Rahul Rai;Shivendra K. Rathaur;Edward Yi Chang","doi":"10.1109/TNANO.2024.3522371","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3522371","url":null,"abstract":"This study tested fluorine doping on various regions of the ferroelectric charge trap gate stack (FEG stack). Fluorine doping effectively reduces oxygen vacancies in the dielectric layer, thus reducing leakage current and stabilizing charge in the dielectric layer. Moreover, fluorine doping can passivate the dangling bonds at the interface and increase the ability of trapping carriers in the trap layer. The FEG stack comprises a tunnel oxide layer (TL), a charge trap layer (CTL), and a ferroelectric layer (FE). Four types of devices were fabricated: undoped, doping in TL, doping in CTL, and doping in both TL and CTL, to investigate the impact of fluorine doping on the FEG gate stack. Devices doping in TL and CTL demonstrated superior performance, achieving the highest V\u0000th\u0000 of 5.4 V with a retention time of 70.42% after 10, 000 seconds. The off-state and gate leakage tests revealed impressive breakdown voltages of 735 V and 24.55 V, respectively. Furthermore, the device exhibited a high operation voltage of 14.3 V for a 10-year lifetime prediction, enabling a wide operating range.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"42-47"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Nanotechnology Publication Information IEEE纳米技术出版信息汇刊

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-25 DOI: 10.1109/TNANO.2024.3517997

引用次数: 0

Enhanced Hydrogen Gas Sensing Performance of Gold Nanoparticle Decorated Nitrogen-Doped ZnO Nanomaterials for Improved Sensitivity and Rapid Response 金纳米粒子修饰氮掺杂ZnO纳米材料的氢气传感性能提高灵敏度和快速响应

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-25 DOI: 10.1109/TNANO.2024.3522368

Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T

{"title":"Enhanced Hydrogen Gas Sensing Performance of Gold Nanoparticle Decorated Nitrogen-Doped ZnO Nanomaterials for Improved Sensitivity and Rapid Response","authors":"Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T","doi":"10.1109/TNANO.2024.3522368","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3522368","url":null,"abstract":"This study investigates the enhancement of hydrogen (H\u00002\u0000) gas sensing in nitrogen-doped Zinc Oxide (ZnO) nanomaterials through the decoration of gold (Au) nanoparticles. ZnO nanoparticles were synthesized via a wet chemical method, doped with nitrogen at 0.5%, 1.0%, and 1.5% concentrations, and decorated with Au nanoparticles. Characterization using X-ray diffraction (XRD) revealed that the ZnO structure remained intact, with the addition of a peak corresponding to Au at 38.19°. Transmission electron microscopy (TEM) confirmed the uniform distribution of spherical Au nanoparticles on the ZnO surfaces. UV-Vis spectroscopy showed an enhanced absorption peak at 532 nm due to surface plasmon resonance. Photoluminescence (PL) spectra indicated reduced emission intensity, suggesting effective charge transfer between ZnO and Au. Gas sensing tests revealed that Au-decorated 1.0 wt. % N exhibited a maximum H\u00002\u0000 gas response of 89% at 200 °C, significantly higher than the 46% response of non-decorated 1.0 wt. % N. Additionally, the Au-decorated N sensors demonstrated a rapid response time of 10 sec and a recovery time of 15 sec. These results highlight the potential of Au-decorated N-doped nanomaterials as highly efficient H\u00002\u0000 gas sensors, combining enhanced sensitivity with fast response kinetics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"27-33"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reduction of Joule Losses in Memristive Switching Using Optimal Control 利用最优控制降低忆阻开关的焦耳损耗

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-13 DOI: 10.1109/TNANO.2024.3517161

Valeriy A. Slipko;Yuriy V. Pershin

引用次数: 0

Polarization Insensitive Graphene Based Tunable Metasurface Terahertz Dual-Band Absorber 偏振不敏感石墨烯基可调谐超表面太赫兹双频吸收器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-12-11 DOI: 10.1109/TNANO.2024.3515459

Niten Kumar Panda;Sraddhanjali Mohapatra;Sudhakar Sahu

引用次数: 0