IEEE Transactions on Nanotechnology最新文献

Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing 边缘计算混合门控循环单元的忆阻电路演示

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-25 DOI: 10.1109/TNANO.2025.3614198

Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang

{"title":"Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing","authors":"Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang","doi":"10.1109/TNANO.2025.3614198","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3614198","url":null,"abstract":"In industrial IoT and distributed computing environments, edge computing devices empowered by AI have seen increasing deployment in large-scale scenarios, thereby accelerating the demand for time-series data processing. The gated recurrent unit (GRU) outperforms conventional artificial neural networks (ANNs) in tasks such as natural language processing, speech recognition, and machine translation, due to its superior capability in modeling long-range dependencies in sequential data. However, the GRU model is limited by its large parameter count and structural complexity, which presents a bottleneck in hardware circuit implementation. To this end, a memristor-based hybrid gated recurrent unit (HGRU) is proposed, which reduces the parameter count to 67% of the original GRU and shortens the single-step computation latency by 50%, while maintaining complete circuit functionality. Finally, the proposed memristor-based HGRU circuit model is evaluated on the MNIST digit recognition and IMDB sentiment analysis tasks, achieving recognition accuracies of 97% and 86.2%, respectively. Under equivalent parameter settings, it achieves runtime reductions of 37% and 52% compared to the standard GRU, thereby significantly enhancing computational efficiency.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"481-488"},"PeriodicalIF":2.1,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Ultra-Low Power 1.2 pJ/Spike Fully CMOS Spiking Neuron and Its Application 超低功耗1.2 pJ/Spike全CMOS Spike神经元及其应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-23 DOI: 10.1109/TNANO.2025.3613362

Prashant Kumar;Rajeev Kumar Ranjan;Sung-Mo Kang

引用次数: 0

Linear, Non-Linear, and Ferroelectric Behavior in 0–3 Nanoparticle-Polymer Dielectrics of Ba(Ti, MV)O3 (M = Nb, Ta) 0-3纳米粒子- Ba(Ti， MV)O3 （M = Nb, Ta）聚合物介电体的线性、非线性和铁电行为

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-05 DOI: 10.1109/TNANO.2025.3606832

Julien Lombardi;Fariha Reza;Nasim Farahmand;Rajinder Deol;Nitika Batra;Jonathan E. Spanier;Christine K. McGinn;Ioannis Kymissis;Stephen O’Brien

{"title":"Linear, Non-Linear, and Ferroelectric Behavior in 0–3 Nanoparticle-Polymer Dielectrics of Ba(Ti, MV)O3 (M = Nb, Ta)","authors":"Julien Lombardi;Fariha Reza;Nasim Farahmand;Rajinder Deol;Nitika Batra;Jonathan E. Spanier;Christine K. McGinn;Ioannis Kymissis;Stephen O’Brien","doi":"10.1109/TNANO.2025.3606832","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3606832","url":null,"abstract":"Nanodielectrics based upon nanoscale Ba(Ti, MV)O3, where M = Nb or Ta, were prepared and electrically characterized for their potential use as a high permittivity dielectric layer. Nanocrystals of Ba(Ti, Nb)O3 (BTNO) and Ba(Ti, Ta)O3 (BTTO) of average size 20 nm (range 10–50 nm) with a non-centrosymmetric (polarizable) crystal structure were synthesized, dispersed in alcohol solvents and blended with three polymers of known but differing dielectric and electromechanical behavior: Polyvinylpyrrolidone (PVP), Polyfurfuryl alcohol (PFA) and Polyvinylidene fluoride–trifluoroethylene (PVDF-TrFE). 0–3 nanoparticle-polymer pressed pellets, films and metal-insulator-metal devices were prepared for electrical characterization. Analysis of the Ba(Ti, MV)O3-PVP and Ba(Ti, MV)O3 -PFA composites showed a high effective permittivity, low loss, low leakage and voltage tolerance, demonstrating the capability for high energy density capacitance. Effective permittivity, of 52 (BTNO-PFA) and 42 (BTTO-PFA) for pellet nanocomposites and 32 (BTNO-PVP) and 20 (BTNO-PVP) film nanocomposites were observed at 1 MHz respectively. Voltage breakdown strengths of 2133 V/mm (BTNO) and 833 V/mm (BTTO) were demonstrated respectively (threshold 0.1 μA). Linear and non-linear dielectric behavior was studied by polarization-electric field (P-E) hysteresis measurements. Nanocomposites of BTNO-PVDF-TrFE were prepared to assess the viability of making ferroelectric nanocomposites over a range of polymer-nanoparticle volume fractions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"452-461"},"PeriodicalIF":2.1,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxide-Trapped-Charge-Induced Gate-Diagonal Tunneling Suppression of Gate-Normal Tunnel Field-Effect Transistors 栅极-法向隧道场效应晶体管的氧化俘获电荷诱导栅极-对角隧道抑制

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-02 DOI: 10.1109/TNANO.2025.3605557

Kyung Min Koo;Jae Seung Woo;Woo Young Choi

引用次数: 0

Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors 利用氧化半导体薄膜晶体管的光电突触门可调谐保持

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-25 DOI: 10.1109/TNANO.2025.3602073

Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair

{"title":"Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors","authors":"Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair","doi":"10.1109/TNANO.2025.3602073","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3602073","url":null,"abstract":"In this work we propose a biasing scheme to modulate the retention behavior of oxide semiconductor based optoelectronic synapses. The method has been demonstrated using a zinc oxide thin film transistor, which exhibits persistent photoconductivity to UV light. The application of a negative gate bias prevents the recombination of photo-generated carriers, leading to a negligible decay in the post synaptic current and consequently, the retention time could extend beyond <inline-formula><tex-math>$10^{5}$</tex-math></inline-formula>s. The improvement in memory retention is observed in various synaptic functions such as short-term memory, long-term memory, duration-time-dependent plasticity and paired pulse facilitation. A five fold improvement in the % decay of post synaptic current was observed at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V, when compared to <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V. Furthermore, we have assessed the impact of these improved retention properties on the performance of an artificial neural network, designed for pattern recognition of MNIST handwritten digits. The accuracy decayed drastically with time from 96% to nearly 40% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V whereas it drops to only 94% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"434-438"},"PeriodicalIF":2.1,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Towards Design-Technology Co-Optimization for Nanosheet Transistors With Backside Contact 面向后接触纳米片晶体管的设计与工艺协同优化

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-18 DOI: 10.1109/TNANO.2025.3599842

Shuying Wang;Pengpeng Ren;Yewei Zhang;Mingzhao Yang;Runsheng Wang;Zhigang Ji

引用次数: 0

Enhancement of Functionalized 1T-NbS2 Monolayer Properties for the Superior Anode of Na-Ion Batteries 功能化1T-NbS2单层膜性能的增强及其在钠离子电池阳极中的应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-07 DOI: 10.1109/TNANO.2025.3597001

Jasil T K;Ashish Kumar Yadav;Gyanendra Kumar Maurya;Vivek Garg;Sushil Kumar Pandey

{"title":"Enhancement of Functionalized 1T-NbS2 Monolayer Properties for the Superior Anode of Na-Ion Batteries","authors":"Jasil T K;Ashish Kumar Yadav;Gyanendra Kumar Maurya;Vivek Garg;Sushil Kumar Pandey","doi":"10.1109/TNANO.2025.3597001","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3597001","url":null,"abstract":"One of the most important factors influencing the performance of Na-ion batteries (NIBs) is the anode’s quality. Currently, NIB anodes have numerous disadvantages, including low capacity, rapid volume change, temperature variable conductivity and poor thermal/chemical stability. In this work, the electronic and transport properties of undoped, doped and defective 1T-NbS2 monolayers were investigated using density functional theory calculations. The maximum quantum capacitance of 1T-NbS2 with S-vacancy (VS-NbS2) changes from 20.49 to 16.92 μF/cm2 across temperature ranges of 200 K to 1000 K, indicating its suitability as anode with temperature-stable capacity. The 1T-NbS2 monolayers exhibit high electrical conductivity with less than 6% fluctuation across a temperature range of 200 K to 1000 K, indicating thermally stable conductance. The 1T-NbS2 layered structure has substantially larger interlayer spacing of 0.615 nm than the size of Na ion (0.095 nm), as well as a relatively tiny variation (0.05 eV for VS-NbS2) in cohesive energies between sodiated and de-sodiated phases, making it a good choice for anodes. For VS-NbS2, the seebeck coefficient ranges from -5 to -40 μV/K, which is often obtained by the most commonly used Na-metal anode, demonstrating its appropriateness as anode. According to our findings, 1T-NbS2 is a great option for thermally stable NIB electrode applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"421-427"},"PeriodicalIF":2.1,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device 用于低功耗突触器件的铁电隧道场效应晶体管的演示

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-04 DOI: 10.1109/TNANO.2025.3595532

Seungwon Go;Sunwoo Lee;Jaekyun Son;Dong Keun Lee;Hyungju Noh;Jae Yeon Park;Seonggeun Kim;Hyunho Ahn;Sihyun Kim;Sangwan Kim

引用次数: 0

Thermoelectric Modules Using Earth-Abundant Elements: The Case of Zn, Cu, Al, O, and S 利用地球上丰富元素的热电模块：Zn， Cu, Al， O和S的情况

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-01 DOI: 10.1109/TNANO.2025.3595009

Cheng-Lun Hsin;Kei-Cheng Yang;Chun-En Hong

引用次数: 0

Spectral Shift From Near to Far-Field Radiation in Metallic Nanoparticles 金属纳米粒子近场到远场辐射的光谱位移

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-07-25 DOI: 10.1109/TNANO.2025.3592825

Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam

{"title":"Spectral Shift From Near to Far-Field Radiation in Metallic Nanoparticles","authors":"Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam","doi":"10.1109/TNANO.2025.3592825","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3592825","url":null,"abstract":"The interaction between light and metallic nanoparticles, driven by potential applications, requires a comprehensive understanding of the intensity and spectral shift from near-field to far-field radiation. The far-field spectra have received extensive attention, yet significant peak shifts in the near-field are often overlooked by Mie solutions, necessitating full-wave numerical solvers for accurate analysis and thus limiting a deeper understanding of near-field behavior. This work proposes an impedance-based compact solution that harnesses the fundamental relationship of voltage-current and the analogy between a series resonant circuit and the near-field to develop compact models uniquely identifying the fundamental mode near and far-field spectral shifts. The results align closely with Mie solutions in the far-field and full-wave solvers in the near-field, demonstrating a strong agreement highlighting the distance-dependent spectral shift dominating the overall response. The compact, parameter-dependent model offers valuable insights, enabling the exploitation of the distinctive near-field interactions of nanoparticles to design and develop extraordinary solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"407-412"},"PeriodicalIF":2.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0