{"title":"sETNM: Soft-Error-Tolerant Nonvolatile MRAM for Space Applications","authors":"Govind Prasad;Sankalp Tattwadarshi Swain","doi":"10.1109/TNANO.2025.3617228","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3617228","url":null,"abstract":"Static random access memory (SRAM) is widely used for its infinite configurability and high performance. However, magnetic RAM (MRAM) is gaining importance in the industry due to its zero leakage, non-volatility, and high radiation reliability. SRAM is susceptible to radiation-induced soft errors, a problem that MRAM mitigates due to its inherent resistance to such errors. Previously, MRAM has been used in various applications, including data storage, but challenges remained in optimizing its design for radiation resilience. In this paper, we have proposed MRAM structure for radiation applications featuring an advanced sense amplifier and precharge circuit. This new MRAM structure provides enhanced radiation hardening with better performance, making it suitable for critical applications in space and other radiation-prone environments.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"495-499"},"PeriodicalIF":2.1,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11189872","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145352060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Oblique Angle Deposition of Slanted TiO2 Columnar for UV Photodetector Application","authors":"Salam Surjit Singh;Naorem Khelchand Singh;Sapam Bikesh;Biraj Shougaijam","doi":"10.1109/TNANO.2025.3616005","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3616005","url":null,"abstract":"With the advancement of optoelectronic technology, a new evaluation of photodetectors’ (PDs’) performance is necessary for next-generation sensing applications. This study uses the e-beam evaporation approach to produce slanted titanium dioxide columnar (TiO<sub>2</sub>-COL) on the Si substrate, with a constant deposition angle of ∼ 61°. The morphology, structural, and optical properties of the fabricated TiO<sub>2</sub>-COL samples were examined. Successful growth of the slanted TiO<sub>2</sub>-COL structure is demonstrated by field emission scanning electron microscopy (FE-SEM). Furthermore, XRD analyses reveal that TiO<sub>2</sub>-COL has an amorphous nature. Optical characterization reveals that the fabricated sample exhibits high absorption intensity in the UV region, for demonstrating a potential UV photodetector application. The TiO<sub>2</sub>-COL based PD that was deposited obliquely displayed I-V curves that demonstrated a distinct photovoltaic mode and an extremely low dark current of a few nanoamperes. Moreover, at ∼ 320 nm, the device exhibits a self-powered UV light response with a responsivity value of around ∼ 1.3 mA/W. In addition, this TiO<sub>2</sub>-COL based photodetector device demonstrates a remarkable detectivity and noise-equivalent-power (NEP) and rise time/fall time of ∼ 4.63 × 10<sup>10</sup> Jones, ∼ 6.06 × 10<sup>−11</sup> W and ∼ 0.305/0.184 sec, respectively, at −0.1 V. Therefore, this novel idea of a slanted TiO<sub>2</sub>-COL structure promotes effective light management and offers a reliable route for creating Low-powered UV PDs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"489-494"},"PeriodicalIF":2.1,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145255873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing","authors":"Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang","doi":"10.1109/TNANO.2025.3614198","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3614198","url":null,"abstract":"In industrial IoT and distributed computing environments, edge computing devices empowered by AI have seen increasing deployment in large-scale scenarios, thereby accelerating the demand for time-series data processing. The gated recurrent unit (GRU) outperforms conventional artificial neural networks (ANNs) in tasks such as natural language processing, speech recognition, and machine translation, due to its superior capability in modeling long-range dependencies in sequential data. However, the GRU model is limited by its large parameter count and structural complexity, which presents a bottleneck in hardware circuit implementation. To this end, a memristor-based hybrid gated recurrent unit (HGRU) is proposed, which reduces the parameter count to 67% of the original GRU and shortens the single-step computation latency by 50%, while maintaining complete circuit functionality. Finally, the proposed memristor-based HGRU circuit model is evaluated on the MNIST digit recognition and IMDB sentiment analysis tasks, achieving recognition accuracies of 97% and 86.2%, respectively. Under equivalent parameter settings, it achieves runtime reductions of 37% and 52% compared to the standard GRU, thereby significantly enhancing computational efficiency.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"481-488"},"PeriodicalIF":2.1,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Numerical Modeling and Analysis of Photoresponse in Graphene-Based PIN Junction Devices","authors":"Vinod Sharma;Jinal Kiran Tapar;Oves Badami;Naresh Kumar Emani","doi":"10.1109/TNANO.2025.3610119","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3610119","url":null,"abstract":"This work presents a comprehensive numerical framework for modeling the photoresponse of monolayer graphene-based photodetectors, by solving Poisson’s and current continuity equations self-consistently. The framework accurately captures both electrostatic potential and carrier transport phenomena in graphene-metal junctions and is validated against experimental data. By implementing a PIN junction architecture, a “staircase” potential profile is formed in the device leading to local electric fields on the order of 10<sup>5</sup> V/cm, significantly enhancing carrier separation and drift current. Our simulation results indicate that the PIN junction yields a 40x increase in responsivity compared to conventional sheet-based graphene devices. This highlights the potential of the PIN junction-based approach for developing advanced, tunable, broadband graphene photodetectors. The developed numerical framework offers a powerful tool for photodetector optimization, enabling systematic exploration of structural parameters and operating conditions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"504-509"},"PeriodicalIF":2.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145351920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair
{"title":"Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors","authors":"Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair","doi":"10.1109/TNANO.2025.3602073","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3602073","url":null,"abstract":"In this work we propose a biasing scheme to modulate the retention behavior of oxide semiconductor based optoelectronic synapses. The method has been demonstrated using a zinc oxide thin film transistor, which exhibits persistent photoconductivity to UV light. The application of a negative gate bias prevents the recombination of photo-generated carriers, leading to a negligible decay in the post synaptic current and consequently, the retention time could extend beyond <inline-formula><tex-math>$10^{5}$</tex-math></inline-formula>s. The improvement in memory retention is observed in various synaptic functions such as short-term memory, long-term memory, duration-time-dependent plasticity and paired pulse facilitation. A five fold improvement in the % decay of post synaptic current was observed at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V, when compared to <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V. Furthermore, we have assessed the impact of these improved retention properties on the performance of an artificial neural network, designed for pattern recognition of MNIST handwritten digits. The accuracy decayed drastically with time from 96% to nearly 40% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V whereas it drops to only 94% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"434-438"},"PeriodicalIF":2.1,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuying Wang;Pengpeng Ren;Yewei Zhang;Mingzhao Yang;Runsheng Wang;Zhigang Ji
{"title":"Towards Design-Technology Co-Optimization for Nanosheet Transistors With Backside Contact","authors":"Shuying Wang;Pengpeng Ren;Yewei Zhang;Mingzhao Yang;Runsheng Wang;Zhigang Ji","doi":"10.1109/TNANO.2025.3599842","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3599842","url":null,"abstract":"Nanosheet transistors has emerged as a potential structure of semiconductor technology. The introduction of Wrapped-Around Contact (WAC) and Backside Power Delivery Network, particularly the Backside Contact (BSC) in nanosheet transistors, has effectively promotes further scaling. This work contributes to design technology co-optimization (DTCO) for BSC technology by comprehensively exploring the impact of structural innovation, process parameters and dimension parameters. Through electro-thermal coupling simulations, we reveal the significant advantages of Backside Contact with WAC structure in terms of electrothermal properties compared to conventional structures. We also investigate the impact of contact resistivity, contact thermal resistivity, sheet width and number on device and circuit performance. This work provides an inspiration to optimize electro-thermal performance under advanced nodes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"439-444"},"PeriodicalIF":2.1,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145036786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device","authors":"Seungwon Go;Sunwoo Lee;Jaekyun Son;Dong Keun Lee;Hyungju Noh;Jae Yeon Park;Seonggeun Kim;Hyunho Ahn;Sihyun Kim;Sangwan Kim","doi":"10.1109/TNANO.2025.3595532","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3595532","url":null,"abstract":"In this paper, a ferroelectric tunnel field-effect transistor (FeTFET) is demonstrated as a synapse device. The experimental results clearly show that there are several merits in FeTFET as a synapse device comparing with the FeFET. First, the FeTFET shows the ∼3 orders lower drain current than the FeFET thanks to the different carrier injection mechanism (i.e., band-to-band tunneling). Second, the memory window of FeTFET (1.48 V) is ∼1.5 times larger than the FeFET (0.95 V) due to an enhanced erase efficiency. As a result, the FeTFET shows the better training accuracy (∼91.5% ) even with the ∼25 times lower energy consumption (∼0.16 mJ) comparing with the FeFET (∼90.4% accuracy with 4.06 mJ energy consumption). Lastly, the FeTFET shows a good retention property (> 10 years) with a ∼10<sup>7</sup> endurance characteristic. In short, the FeTFET can be a promising candidate for a low-power synapse device.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"413-416"},"PeriodicalIF":2.1,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam
{"title":"Spectral Shift From Near to Far-Field Radiation in Metallic Nanoparticles","authors":"Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam","doi":"10.1109/TNANO.2025.3592825","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3592825","url":null,"abstract":"The interaction between light and metallic nanoparticles, driven by potential applications, requires a comprehensive understanding of the intensity and spectral shift from near-field to far-field radiation. The far-field spectra have received extensive attention, yet significant peak shifts in the near-field are often overlooked by Mie solutions, necessitating full-wave numerical solvers for accurate analysis and thus limiting a deeper understanding of near-field behavior. This work proposes an impedance-based compact solution that harnesses the fundamental relationship of voltage-current and the analogy between a series resonant circuit and the near-field to develop compact models uniquely identifying the fundamental mode near and far-field spectral shifts. The results align closely with Mie solutions in the far-field and full-wave solvers in the near-field, demonstrating a strong agreement highlighting the distance-dependent spectral shift dominating the overall response. The compact, parameter-dependent model offers valuable insights, enabling the exploitation of the distinctive near-field interactions of nanoparticles to design and develop extraordinary solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"407-412"},"PeriodicalIF":2.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Hybrid Multi-Level Cell Spin-Orbit Torque Memory for Fast and Robust Memory Operations","authors":"Kon-Woo Kwon;Yeongkyo Seo","doi":"10.1109/TNANO.2025.3585167","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3585167","url":null,"abstract":"This paper proposes a hybrid spintronic multi-level cell (MLC) optimized for fast and reliable memory operations. The proposed MLC employs two magnetic tunnel junctions with distinct magnetization characteristics within a single cell, leveraging their significant differences in critical current requirements to effectively mitigate write-disturb failures. Moreover, the proposed design incorporates a spin-orbit torque-based switching mechanism along with a device multiplexing architecture, which together enable a one-step write operation and an opportunistic one-step read operation. Simulations demonstrate up to a 2× reduction in latency compared to conventional spintronic MLCs, along with a 2× increase in area efficiency over single-level cell designs and a high write-disturb margin of 61<inline-formula><tex-math>$%$</tex-math></inline-formula>.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"363-368"},"PeriodicalIF":2.1,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144634713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Preparation of Nanofibrous Membranes Containing Carbon Dots Composited With TiO2 Photocatalyst and Their Removal Rate of Methylene Blue Under Visible Light","authors":"Yu-Hsun Nien;Yu-Ping Wang","doi":"10.1109/TNANO.2025.3584828","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584828","url":null,"abstract":"As the industrialization is improving by way of science and technology in society, water pollution has become increasingly serious. Non-degradable organic matter exists in wastewater, which causes environmental deterioration. In order to solve this problem, we select titanium dioxide (TiO<sub>2</sub>) as the photocatalyst material with high activity, chemical stability and low cost. However, pure TiO<sub>2</sub> has a large band gap (3.2 eV) and can only be activated under ultraviolet (UV) light. Therefore, TiO<sub>2</sub> has to be modified to fit our requirement. Carbon dots (CDs) have up-conversion and down-conversion photoluminescence and inhibit the recombination of electron-hole pairs, Adding CDs can reduce the band gap width of TiO<sub>2</sub>, and increase the absorption of visible light significantly, thereby improving photocatalytic efficiency. We use citric acid as the carbon source and urea as the nitrogen source to prepare CDs by using the hydrothermal method, and prepare the CDs/TiO<sub>2</sub> composite photocatalyst through the sol-gel method. The CDs/TiO<sub>2</sub> composite photocatalyst shows stable and efficient photocatalytic performance for removal of methylene blue (MB), with a removal rate of 95.34%. In order to reuse the CDs/TiO<sub>2</sub> composite photocatalyst powder, we use electrospinning technology to combine CDs/TiO<sub>2</sub> composite photocatalyst with nylon 6,6 nanofibrous membranes. After three cycle tests, we confirm that it is recyclable and practical, and its removal rate is also increased to 99.39%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"338-346"},"PeriodicalIF":2.1,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}