IEEE Transactions on Nanotechnology最新文献

Transistors With MoS$_{2}$ Subnanometer Channels Embedded in 2D WSe$_{2}$

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-11 DOI: 10.1109/TNANO.2025.3549522

T. Cusati;D. Marian;A. Toral-Lopez;E. G. Marin;G. Iannaccone;G. Fiori

引用次数: 0

Polynomial Formal Verification of a RISC-V Processor

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-05 DOI: 10.1109/TNANO.2025.3548265

Lennart Weingarten;Kamalika Datta;Rolf Drechsler

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Effects of 3D Channel Shape on the Performance of Nanoscale Gate-All-Around FETs 三维沟道形状对纳米级全栅极场效应晶体管性能的影响

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-03-03 DOI: 10.1109/TNANO.2025.3546872

Min Kyun Sohn;Sang-Hoon Kim;Seong Hyun Lee;Jeong Woo Park;Dongwoo Suh

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Influence of Temperature, Strain Rate, and Vacancies on the Mechanical Properties of Aluminum-Doped Bilayer Silicene

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-28 DOI: 10.1109/TNANO.2025.3546749

Alexandre Melhorance Barboza;Luis César Rodríguez Aliaga;Daiara Fernandes de Faria;Ivan Napoleão Bastos

{"title":"Influence of Temperature, Strain Rate, and Vacancies on the Mechanical Properties of Aluminum-Doped Bilayer Silicene","authors":"Alexandre Melhorance Barboza;Luis César Rodríguez Aliaga;Daiara Fernandes de Faria;Ivan Napoleão Bastos","doi":"10.1109/TNANO.2025.3546749","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3546749","url":null,"abstract":"Silicene, a two-dimensional material with promising potential for future technological applications, has attracted considerable attention over the past decade. Recent research has focused on modifying silicene's electronic and magnetic properties by means of adsorption or substitutional doping. While the magnetic, electronic, and optical properties of doped silicene have been extensively studied, there is a noticeable gap in the literature regarding its mechanical properties. To address this issue, this study explores the mechanical characteristics of bilayer silicene doped with aluminum under various conditions. By employing molecular dynamics simulations, we investigate the influence of aluminum concentration, defects, temperature, and strain rate on the material's mechanical response. The findings reveal a monotonically decreasing strength with Al concentration in both the zigzag and armchair straining directions. Additionally, the material exhibits high sensitivity to defects, with even a small percentage significantly impairing its mechanical properties. Directional dependence is also observed, with the zigzag direction showing greater sensitivity than the armchair. As strain progresses, initial mono-vacancies evolve into more complex defects, hindering predictions of the mechanical response in certain cases. Lastly, strain rate sensitivity is evaluated, yielding values of 0.0485 and 0.0365 for the zigzag and armchair directions, respectively.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"134-139"},"PeriodicalIF":2.1,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908092","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143621888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-24 DOI: 10.1109/TNANO.2025.3545251

Yongmin Wang;Kristoffer Schnieders;Vasileios Ntinas;Alon Ascoli;Felix Cüppers;Susanne Hoffmann-Eifert;Stefan Wiefels;Ronald Tetzlaff;Vikas Rana;Stephan Menzel

{"title":"Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks","authors":"Yongmin Wang;Kristoffer Schnieders;Vasileios Ntinas;Alon Ascoli;Felix Cüppers;Susanne Hoffmann-Eifert;Stefan Wiefels;Ronald Tetzlaff;Vikas Rana;Stephan Menzel","doi":"10.1109/TNANO.2025.3545251","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3545251","url":null,"abstract":"Cellular Nonlinear Networks (CNNs) are a well established computing approach in the domain of analog computing, known for massive parallelism and data processing locality that enable efficient hardware implementations. Combining CNN with non-volatile memristive devices holds the promise to overcome technological hurdles, like scalability issues, and high energy consumption, while also introducing richer dynamics into the field of CNN. Memristive devices based on the valence change mechanism (VCM) show great properties, like bipolar switching, tuneable resistance and non-volatility that are essential for the design of memristive CNN (M-CNN). In this study we design and investigate an uncoupled M-CNN cell implementing the EDGE detection task. This is the first paper investigating the resilience of M-CNN against device-to-device variability. To this end the first experimentally acquired Dynamic Route Map (DRM) of the M-CNN cell is employed. The comparison with simulations results allows for investigating the effect of mechanisms in the VCM device on the performance of the cell. The result of the computation is stored in the VCM device despite the unavoidable variability in the electrical behaviors of different device samples. Furthermore, the theoretically predicted richer dynamics of M-CNNs over traditional CNNs is demonstrated. This work provides crucial insights into design considerations of M-CNNs, especially as here first steps towards the comprehensive analysis on the effect of imperfections and variability of the memristor on M-CNN cell are taken.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"121-128"},"PeriodicalIF":2.1,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10902144","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143621924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ti-Doped ZnO Nanowires: A Breakthrough in Non-Volatile Resistive Memory Application

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-21 DOI: 10.1109/TNANO.2025.3544438

Amitabha Nath;Madhuri Mishra;Subhananda Chakrabarti

引用次数: 0

ANN-Driven Modeling of Gate-All-Around Transistors Incorporating Complete Current Profiles

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-14 DOI: 10.1109/TNANO.2025.3542165

Anant Singhal;Harshit Agarwal

引用次数: 0

Simulation Study on the Impact of Miniaturization in 3 nm Node 3D Junctionless Transistors

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-06 DOI: 10.1109/TNANO.2025.3539457

Luca Scognamiglio;Fabrizio Mo;Chiara Elfi Spano;Marco Vacca;Gianluca Piccinini

{"title":"Simulation Study on the Impact of Miniaturization in 3 nm Node 3D Junctionless Transistors","authors":"Luca Scognamiglio;Fabrizio Mo;Chiara Elfi Spano;Marco Vacca;Gianluca Piccinini","doi":"10.1109/TNANO.2025.3539457","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3539457","url":null,"abstract":"Junctionless Nanosheet gate-all-around Field Effect Transistor (JL-NSGAAFET) is a promising technology characterized by the absence of any junctions between source-channel-drain. This absence allows to further scale down transistors while limiting short-channel effects. In this article, JL-NSGAAFET is explored as a potential candidate for the next 3 nm technology node through 3D TCAD simulations. First, we propose and simulate, through fabrication process simulations, a fabrication strategy for the JL-NSGAAFET compatible with the current manufacturing technology and based on the inversion mode NSGAAFET fabrication process. The high-k gate dielectric (HfO2) and metal-gate technology (TiN) are also adopted in the fabrication process to enhance the electrostatic gate control over the channel for the n-type and p-type transistors. Then, we perform electrical simulations of the device by also including drift-diffusion model and quantum density gradient correction. We characterize the device in terms of electrical performance and compare with the conventional NSGAAFET. Furthermore, to investigate the impact of the device scaling on the unwanted short channel effects, we simulate and analyze the devices while varying the gate length (LG) from 20 nm to 12 nm. Our reported simulation results prove that JL-NSGAAFET exhibits near-ideal subthreshold slope, low drain-induced barrier lowering (DIBL) and high on-to-off current ratio (ION/IOFF) with superior advantages of greater drive currents and a simpler fabrication process because of the absence of junctions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"102-109"},"PeriodicalIF":2.1,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2024 Index IEEE Transactions on Nanotechnology Vol. 23

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-03 DOI: 10.1109/TNANO.2025.3537416

引用次数: 0

Insights Into Temperature Sensitivity Analysis of Polarity Controlled Charge Plasma Based Tunable Arsenide/Antimonide Tunneling Interfaced Junctionless TFET

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-01-21 DOI: 10.1109/TNANO.2025.3532313

S. Sharma;J. Madan;R. Chaujar

{"title":"Insights Into Temperature Sensitivity Analysis of Polarity Controlled Charge Plasma Based Tunable Arsenide/Antimonide Tunneling Interfaced Junctionless TFET","authors":"S. Sharma;J. Madan;R. Chaujar","doi":"10.1109/TNANO.2025.3532313","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3532313","url":null,"abstract":"This research delves into the temperature-dependent performance of a novel polarity-controlled charge plasma-based InAs/AlGaSb tunneling interfaced junctionless TFET (H-JLTFET). The device leverages the benefits of both charge plasma and heterojunction engineering to enhance device performance. Comprehensive simulations were conducted to assess the impact of temperature on device characteristics. Results indicate that while the device exhibits promising ON-state current and high-frequency metrics, with a peak <italic>fT of 417 GHz and an <italic>fmax of 4390 GHz, the subthreshold region is significantly influenced by temperature. The observed increase in OFF-state current and degradation in subthreshold swing highlight the need for careful thermal management and circuit design. Furthermore, the study reveals a moderate impact of temperature on intrinsic delay and a slight increase in ambipolar current. Overall, this work provides valuable insights into the thermal behavior of H-JLTFETs, paving the way for optimized device design and reliable operation in various applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"96-101"},"PeriodicalIF":2.1,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143465613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0