Numerical Modeling and Analysis of Photoresponse in Graphene-Based PIN Junction Devices

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2025-09-16 DOI:10.1109/TNANO.2025.3610119

Vinod Sharma;Jinal Kiran Tapar;Oves Badami;Naresh Kumar Emani

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Abstract

This work presents a comprehensive numerical framework for modeling the photoresponse of monolayer graphene-based photodetectors, by solving Poisson’s and current continuity equations self-consistently. The framework accurately captures both electrostatic potential and carrier transport phenomena in graphene-metal junctions and is validated against experimental data. By implementing a PIN junction architecture, a “staircase” potential profile is formed in the device leading to local electric fields on the order of 10⁵ V/cm, significantly enhancing carrier separation and drift current. Our simulation results indicate that the PIN junction yields a 40x increase in responsivity compared to conventional sheet-based graphene devices. This highlights the potential of the PIN junction-based approach for developing advanced, tunable, broadband graphene photodetectors. The developed numerical framework offers a powerful tool for photodetector optimization, enabling systematic exploration of structural parameters and operating conditions.

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基于石墨烯的PIN结器件光响应的数值模拟与分析

本工作通过自一致地求解泊松方程和电流连续性方程，提出了一个全面的数值框架来模拟单层石墨烯基光电探测器的光响应。该框架准确地捕获了石墨烯-金属结中的静电势和载流子输运现象，并通过实验数据进行了验证。通过实现PIN结结构，在器件中形成“阶梯”电位分布，导致105v /cm量级的局部电场，显著增强载流子分离和漂移电流。我们的模拟结果表明，与传统的基于薄片的石墨烯器件相比，PIN结的响应率提高了40倍。这突出了基于PIN结的方法在开发先进的、可调谐的宽带石墨烯光电探测器方面的潜力。开发的数值框架为光电探测器优化提供了一个强大的工具，可以系统地探索结构参数和操作条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.