用于空间应用的软容错非易失性MRAM

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2025-10-02 DOI:10.1109/TNANO.2025.3617228

Govind Prasad;Sankalp Tattwadarshi Swain

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引用次数: 0

摘要

静态随机存取存储器（SRAM）以其无限可配置性和高性能得到了广泛的应用。然而，磁性RAM （MRAM）由于其零泄漏、无挥发性和高辐射可靠性而在行业中越来越重要。SRAM容易受到辐射引起的软错误的影响，MRAM由于其固有的对这种错误的抵抗力而减轻了这个问题。此前，MRAM已用于各种应用，包括数据存储，但在优化其辐射弹性设计方面仍然存在挑战。在本文中，我们提出了具有先进感测放大器和预充电电路的辐射应用MRAM结构。这种新型MRAM结构提供了更好的性能增强的辐射硬化，使其适用于空间和其他辐射易发环境中的关键应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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sETNM: Soft-Error-Tolerant Nonvolatile MRAM for Space Applications

Static random access memory (SRAM) is widely used for its infinite configurability and high performance. However, magnetic RAM (MRAM) is gaining importance in the industry due to its zero leakage, non-volatility, and high radiation reliability. SRAM is susceptible to radiation-induced soft errors, a problem that MRAM mitigates due to its inherent resistance to such errors. Previously, MRAM has been used in various applications, including data storage, but challenges remained in optimizing its design for radiation resilience. In this paper, we have proposed MRAM structure for radiation applications featuring an advanced sense amplifier and precharge circuit. This new MRAM structure provides enhanced radiation hardening with better performance, making it suitable for critical applications in space and other radiation-prone environments.

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.