sETNM: Soft-Error-Tolerant Nonvolatile MRAM for Space Applications

Abstract

Static random access memory (SRAM) is widely used for its infinite configurability and high performance. However, magnetic RAM (MRAM) is gaining importance in the industry due to its zero leakage, non-volatility, and high radiation reliability. SRAM is susceptible to radiation-induced soft errors, a problem that MRAM mitigates due to its inherent resistance to such errors. Previously, MRAM has been used in various applications, including data storage, but challenges remained in optimizing its design for radiation resilience. In this paper, we have proposed MRAM structure for radiation applications featuring an advanced sense amplifier and precharge circuit. This new MRAM structure provides enhanced radiation hardening with better performance, making it suitable for critical applications in space and other radiation-prone environments.