IEEE Transactions on Nanotechnology最新文献_第8页

Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors 垂直硅纳米线晶体管制造的最新挑战

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-23 DOI: 10.1109/TNANO.2025.3582023

Cigdem Cakirlar;Jonas Müller;Christoph Beyer;Konstantinos Moustakas;Bruno Neckel Wesling;Giulio Galderisi;Sylvain Pelloquin;Cristell Maneux;Thomas Mikolajick;Guilhem Larrieu;Jens Trommer

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Analytical Modeling and Simulation Investigation of Nanowire Tunnel FET for Potential and Drain Current Evaluation 纳米线隧道场效应管的分析建模与仿真研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-20 DOI: 10.1109/TNANO.2025.3581782

Parveen Kumar;Balwinder Raj;Girish Wadhwa

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Investigation of Size-Dependent Electrical Transport in Single Nanowire La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca and $x$ = 0.5 for A = Sr) Using Nanolithography-Based Device Fabrication 利用纳米光刻技术研究单纳米线La$_{1-x}$A$_{x}$MnO$_{3}$ （A = Ca = $x$ = 0.3 & 0.5, A = Sr = $x$ = 0.5）中尺寸相关的电输运

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-18 DOI: 10.1109/TNANO.2025.3580798

Subarna Datta;Barnali Ghosh;Soumyadipta Pal

{"title":"Investigation of Size-Dependent Electrical Transport in Single Nanowire La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca and $x$ = 0.5 for A = Sr) Using Nanolithography-Based Device Fabrication","authors":"Subarna Datta;Barnali Ghosh;Soumyadipta Pal","doi":"10.1109/TNANO.2025.3580798","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3580798","url":null,"abstract":"This work investigates the integration of single nanowire La<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>A<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>MnO<inline-formula><tex-math>$_{3}$</tex-math></inline-formula> (<inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.3 & 0.5 for A = Ca; <inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.5 for A = Sr) nano-devices via advanced nanolithography techniques for transport measurements. The comparative study of resistivity in bulk and nanowire forms highlights a significant size-dependent enhancement in transport behavior. Notably, the resistivity data for La<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>A<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>MnO<inline-formula><tex-math>$_{3}$</tex-math></inline-formula> (<inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.3 & 0.5 for A = Ca; <inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.5 for A = Sr) nanowires could not be fully explained by conventional models like Mott Variable Range Hopping (VRH) model, Efros-Shklovskii (ES) localization model, adiabatic small polaron hopping (ASPH) model etc. A hybrid model incorporating fluctuation-induced tunneling and disorder-induced localization more accurately captures the resistivity variation across temperature ranges. This refined approach successfully models transport behavior, particularly in the insulating regime, validating its applicability over previous models. The study establishes a robust methodology combining precise lithographic fabrication and improved theoretical modeling, paving the way for accurate transport characterization in complex oxide nanowires.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"593-601"},"PeriodicalIF":2.1,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145886594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Efficient Photodetection via High Aspect Ratio Core-Shell Nanowire Array 高纵横比核壳纳米线阵列的高效光电探测

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-10 DOI: 10.1109/TNANO.2025.3577930

Vishal Kaushik;Swati Rajput;Ashavani Kumar;Mukesh Kumar

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Blue Narrowband Photomultiplication Type Organic Photodetector Using ZnPc as Photon Field Modulation Layer 利用ZnPc作为光子场调制层的蓝色窄带光电倍增型有机光电探测器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-06 DOI: 10.1109/TNANO.2025.3577501

Sampati Rao Sridhar;Medha Joshi;Brijesh Kumar

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Ni-SiO2 Cell-Assisted Thermally Stable Broadband Metamaterial Emitter Ni-SiO2电池辅助热稳定宽带超材料发射极

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-06-03 DOI: 10.1109/TNANO.2025.3576246

Muhammad Saqlain;Muhammad Abuzar Baqir;Pankaj Kumar Choudhury

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An Intelligent 3D-AFM Scanning Process Based on Online Probe Rotation and Adaptive Speed Strategy 基于在线探针旋转和自适应速度策略的3D-AFM智能扫描过程

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565847

Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu

{"title":"An Intelligent 3D-AFM Scanning Process Based on Online Probe Rotation and Adaptive Speed Strategy","authors":"Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu","doi":"10.1109/TNANO.2025.3565847","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565847","url":null,"abstract":"Atomic Force Microscope (AFM) has remained one of the most prominent morphology tools for examining the microscopic world. However, the 3D-AFM has several disadvantages. First, the physical AFM tip occupies space and may sometimes obstruct the scanning process, creating distorted results, especially for vertical sidewalls. Additionally, the traditional AFM scanning scheme results in sparser data density along steep surfaces. In this work, to alleviate distortion, the AFM probe is allowed to rotate. Moreover, the scanning speed along the fast axis in a scan line has to be adaptive according to terrain variation. Therefore, we aim to develop and implement an intelligent AFM scanning process assisted by the proposed probe rotation decision (PRD) and adaptive speed decision (ASD) modules, enabling the AFM probe to achieve online rotation and variable scan speed. Moreover, methods for online coarse compensation and offline fine compensation are also presented to accurately eliminate tip shifts caused by probe rotation. Finally, some comparison results will be provided to demonstrate the effectiveness of the proposed intelligent scanning process.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"264-276"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144100085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach 基于fdsoi的可重构场效应管：铁电方法

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565720

Donghyeok Lee;Suprem R. Das;Jiseok Kwon;Jiwon Chang

引用次数: 0

Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks 记忆电阻细胞非线性网络中的随机模板和噪声动力学

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565887

Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff

{"title":"Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks","authors":"Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff","doi":"10.1109/TNANO.2025.3565887","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565887","url":null,"abstract":"Noise is a pervasive aspect that impacts various systems and environments, from mobile radio channels to biological systems. Within the framework of complex networks, noise poses significant challenges for functionality and performance. In this paper, we investigate the dynamics of a well-known type of locally-coupled computing networks, Memristor Cellular Nonlinear Networks (M-CNNs), in the presence of noise at their interconnection weights, introducing the concept of stochastic weights. In particular, we analyze the effect of noise originating from the synaptic memristors by incorporating both deterministic and stochastic components into synaptic weights, investigating how device-to-device variability and noise affect network performance. Based on the well-established theory of CNNs, we are extending the stability criteria to incorporate synaptic memristor non-idealities and we provide a theoretical framework to analyze their effect on system's performance. In this work, we employ the physics-based Jülich Aachen Resistive Switching Tools (JART) model to study Valence Change Memory (VCM) devices as synapses within our theoretical framework. We investigate the impact of device variability and noise, utilizing statistical properties derived from experimental data reported in the literature. We demonstrate the efficacy of noisy M-CNNs in performing the edge detection task, an example of fundamental image processing applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"282-292"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-29 DOI: 10.1109/TNANO.2025.3565276

Amit Verma;Reza Nekovei;Daryoush Shiri

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