IEEE Transactions on Nanotechnology最新文献_第8页

Biosensor Chip for Point-of-Care Diagnostics: Carbon Nanotube Sensing Platform for Bacterial Detection and Identification 用于床旁诊断的生物传感器芯片：用于细菌检测和鉴定的碳纳米管传感平台

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-22 DOI: 10.1109/TNANO.2024.3380997

Rebecca Ho;Samuel Fuller;Hae-Seung Lee;Max M. Shulaker

引用次数: 0

A High-Accuracy and Low-Power Emerging Technology-Based Associative Memory 基于新兴技术的高精度、低功耗联想存储器

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-21 DOI: 10.1109/TNANO.2024.3380368

Mahan Rezaei;Abdolah Amirany;Mohammad Hossein Moaiyeri;Kian Jafari

{"title":"A High-Accuracy and Low-Power Emerging Technology-Based Associative Memory","authors":"Mahan Rezaei;Abdolah Amirany;Mohammad Hossein Moaiyeri;Kian Jafari","doi":"10.1109/TNANO.2024.3380368","DOIUrl":"10.1109/TNANO.2024.3380368","url":null,"abstract":"Associative memory (AM) is a subcategory of neural networks (NNs) inspired by human memory. Over time, the need to process complex tasks has increased, leading to the development of intelligent processors. Most NN circuits have been implemented using complementary metal-oxide-semiconductor (CMOS) technologies. However, some adverse effects have become more apparent with the scaling of transistors. Several emerging technologies, such as magnetic tunnel junctions (MTJ) and carbon nanotube field-effect transistors (CNTFET), have been introduced to address these issues. This paper proposes a novel, robust AM design based on CNTFETs and MTJs. The use of MTJs in the proposed design is motivated by their reliable reconfigurability and nonvolatility. Moreover, CNTFETs overcome the limitations of conventional CMOS technology. The main goal of the proposed method is to increase the voltage swing of the synapse output, reducing the impact of process variations and increasing accuracy. Simulation results indicate that the proposed design offers up to 50% fewer recall attempts and at least 15% and 9% lower average and static energy consumption than the state-of-the-art counterparts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"293-298"},"PeriodicalIF":2.4,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140203681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unveiling the Effect of CZTSSe Quantum Superlattice on the Interfacial and Optical Properties of CZTS Kesterite Solar Cell 揭示 CZTSSe 量子超晶格对 CZTS Kesterite 太阳能电池界面和光学特性的影响

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-21 DOI: 10.1109/TNANO.2024.3380361

G. S. Sahoo;M. Verma;S. Routray;G. P. Mishra

{"title":"Unveiling the Effect of CZTSSe Quantum Superlattice on the Interfacial and Optical Properties of CZTS Kesterite Solar Cell","authors":"G. S. Sahoo;M. Verma;S. Routray;G. P. Mishra","doi":"10.1109/TNANO.2024.3380361","DOIUrl":"10.1109/TNANO.2024.3380361","url":null,"abstract":"Research on Cu\u00002\u0000ZnSnS\u0000x\u0000Se\u00004–x\u0000 (CZTSSe) Kesterite solar cells has reached a critical point, despite a significant improvement in understanding of the limitations associated with these materials. However, the conversion efficiency of CZTSSe solar cells has yet to exceed 20%, primarily due to a relatively high voltage deficit compared to other well-established chalcogenide technologies. The primary limitation for open-circuit voltage (V\u0000oc\u0000) in CZTSSe solar cells is associated with the defect structure, including intrinsic defects and defect clusters within the bulk absorber film. Specifically, the unfavorable band structure and poor defect environment contribute to increased carrier recombination at the front interface, which is a major challenge. To mitigate the issues related to interface recombination and reduce the V\u0000oc\u0000 deficit, a promising and practical approach known as quantum superlattices (QSs) has been proposed. It demonstrates CZTSSe QSs in the CZTS absorber layer. In ideal case it provides an efficiency of 37.8% with a V\u0000oc\u0000 of 1.06V, which is far better as compared to previously existing chalcogeneide technologies. Also in this study a deep inside into the different types of defect engineering is provided in detail with the help of numerical simulation tool.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"286-292"},"PeriodicalIF":2.4,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140203559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anti-Parity-Time Symmetry and Non-Reciprocal Transmission in Photonic Dimer 光子二聚体中的反极性-时间对称性和非互惠传输

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-18 DOI: 10.1109/TNANO.2024.3375848

Bo Lu;Yong-Pan Gao;Lu Liu;Chuan Wang

引用次数: 0

Biosynthesized AgNP Modified Glassy Carbon Electrode as a Bacteria Sensor Based on Amperometry and Impedance-Based Detection 生物合成的 AgNP 修饰玻璃碳电极作为基于安培计和阻抗检测的细菌传感器

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-11 DOI: 10.1109/TNANO.2024.3375364

Rhea Patel;Naresh Mandal;Bidhan Pramanick

{"title":"Biosynthesized AgNP Modified Glassy Carbon Electrode as a Bacteria Sensor Based on Amperometry and Impedance-Based Detection","authors":"Rhea Patel;Naresh Mandal;Bidhan Pramanick","doi":"10.1109/TNANO.2024.3375364","DOIUrl":"10.1109/TNANO.2024.3375364","url":null,"abstract":"The most effective methods for detecting bacterial cells at different phases of development take a lot of time, require expert labor, and call for state-of-the-art lab setups, including complex equipment and surroundings. Here, using amperometry and non-faradaic electrochemical impedance spectroscopy (nf-EIS) measurements, we have developed a glassy carbon electrode (GCE) derived from carbon-microelectromechanical systems (C-MEMS) that has been bio-modified to detect the impact of biologically synthesized silver nanoparticles on bacterial cells. The measurement method is more straightforward and accurate because no labeling molecules or redox markers are used. Using a standard bioassay method, the antibacterial properties of the synthesized nanoparticles were established. Amperometry and impedance readings were then used to determine when the concentration of the cells had decreased. The electroanalytical analysis was performed using the chronoamperometry method under optimal conditions. Rapid antibacterial testing at the point-of-need, a significant problem in water quality management, is made possible thanks to these findings.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"257-264"},"PeriodicalIF":2.4,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140105445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Variability-Aware Memristive Crossbars With ImageSplit Neural Architecture 采用图像分割神经架构的可变性感知记忆十字杆

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-08 DOI: 10.1109/TNANO.2024.3375125

Aswani Radhakrishnan;Anitha Gopi;Chithra Reghuvaran;Alex James

{"title":"Variability-Aware Memristive Crossbars With ImageSplit Neural Architecture","authors":"Aswani Radhakrishnan;Anitha Gopi;Chithra Reghuvaran;Alex James","doi":"10.1109/TNANO.2024.3375125","DOIUrl":"10.1109/TNANO.2024.3375125","url":null,"abstract":"The errors in the memristive crossbar arrays due to device variations will impact the overall accuracy of neural networks or in-memory systems developed. For ensuring reliable use of memristive crossbar arrays, variability compensation techniques are essential to be part of the neural network design. In this paper, we present an input regulated variability compensation technique for memristive crossbar arrays. In the proposed method, the input image is split into non-overlapping blocks to be processed individually by small sized neural network blocks, which is referred to as imageSplit architecture. The memristive crossbar based Artificial Neural Network (ANN) blocks are used for building the proposed imageSplit. Circuit level analysis and integration is carried out to validate the proposed architecture. We test this approach on different datasets using various deep neural network architectures. The paper considers various device variations including \u0000<inline-formula><tex-math>$R_{OFF}/R_{ON}$</tex-math></inline-formula>\u0000 variations and aging using imageSplit. Along with hardware compensation techniques, algorithmic modifications like pruning and dropouts are also considered for analysis. The results show that splitting the input and independently training the smaller neural networks performs better in terms of output probabilistic values even with the presence of the significant amount of hardware variability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"274-280"},"PeriodicalIF":2.4,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10463155","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140070099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Towards Atomic Scale Quantum Dots in Silicon: An Ultra-Efficient and Robust Subtractor Using Proposed P-Shaped Pattern 在硅中实现原子级量子点：使用 P 形图案的超高效稳健减法器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-08 DOI: 10.1109/TNANO.2024.3398560

Hadi Rasmi;Mohammad Mosleh;Nima Jafari Navimipour;Mohammad Kheyrandish

{"title":"Towards Atomic Scale Quantum Dots in Silicon: An Ultra-Efficient and Robust Subtractor Using Proposed P-Shaped Pattern","authors":"Hadi Rasmi;Mohammad Mosleh;Nima Jafari Navimipour;Mohammad Kheyrandish","doi":"10.1109/TNANO.2024.3398560","DOIUrl":"10.1109/TNANO.2024.3398560","url":null,"abstract":"Today, Complementary Metal-Oxide-Semiconductor (CMOS) technology faces critical challenges, such as power consumption and current leakage at the nanoscale. Therefore, Atomic Silicon Dangling Bond (ASDB) technology has been proposed as one of the best candidates to replace CMOS technology; due to its high-speed switching and low power consumption. Among the most important issues in ASDB nanotechnology, output stability and robustness against possible faults may be focused. This paper first introduces a novel P-shaped pattern in ASDB, for designing stable and robust primitive logic gates, including AND, NAND, OR, NOR and XOR. Then, two combinational circuits, half-subtractor and full-subtractor, are proposed by the proposed ASDB gates. The simulation results show high output stability as well as adequate robustness, against various defects obtained by the proposed designs; on average, they have improvements of more than 56% and 62%, against DB omission defects and extra cell deposition defects; respectively. Also, the results of the investigations show that the proposed circuits have been improved by 65%, 21% and 2%, in terms of occupied area, energy and occurrence, respectively; compared to the previous works.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"482-489"},"PeriodicalIF":2.1,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140929837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

From Multipliers to Integrators: A Survey of Stochastic Computing Primitives 从乘法器到积分器：随机计算原语概览

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-05 DOI: 10.1109/TNANO.2024.3373499

Shanshan Liu;Josep L. Rosselló;Siting Liu;Xiaochen Tang;Joan Font-Rosselló;Christian F. Frasser;Weikang Qian;Jie Han;Pedro Reviriego;Fabrizio Lombardi

{"title":"From Multipliers to Integrators: A Survey of Stochastic Computing Primitives","authors":"Shanshan Liu;Josep L. Rosselló;Siting Liu;Xiaochen Tang;Joan Font-Rosselló;Christian F. Frasser;Weikang Qian;Jie Han;Pedro Reviriego;Fabrizio Lombardi","doi":"10.1109/TNANO.2024.3373499","DOIUrl":"10.1109/TNANO.2024.3373499","url":null,"abstract":"Stochastic Computing (SC) has the potential to dramatically improve important nanoscale circuit metrics, including area and power dissipation, for implementing complex digital computing systems, such as large neural networks, filters, or decoders, among others. This paper reviews the state-of-the-art design of important SC building blocks covering both arithmetic circuits, including multipliers, adders, and dividers, and finite state machines (FSMs) that are needed for numerical integration, accumulation, and activation functions in neural networks. For arithmetic circuits, we review newly proposed schemes, such as Delta Sigma Modulator-based dividers providing accurate and low latency computation, as well as design considerations by which the degree of correlation/decorrelation can be efficiently handled at the arithmetic circuit level. As for complex sequential circuits, we review classical stochastic FSM schemes as well as new designs using the recently-proposed dynamic SC to reduce the length of a stochastic sequence to obtain computation results. These stochastic circuits are compared to traditional implementations in terms of efficiency and delay for various levels of accuracy to illustrate the ranges of values for which SC provides significant performance benefits.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"238-249"},"PeriodicalIF":2.4,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Magnetic Field Sensing With MAGNC-FinFET: A Current Mode Hall Effect Approach 利用 MAGNC-FinFET 增强磁场感应：电流模式霍尔效应方法

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-05 DOI: 10.1109/TNANO.2024.3373035

Ravindra Kumar Maurya;Radhe Gobinda Debnath;Rajesh Saha;Brinda Bhowmick

{"title":"Enhanced Magnetic Field Sensing With MAGNC-FinFET: A Current Mode Hall Effect Approach","authors":"Ravindra Kumar Maurya;Radhe Gobinda Debnath;Rajesh Saha;Brinda Bhowmick","doi":"10.1109/TNANO.2024.3373035","DOIUrl":"10.1109/TNANO.2024.3373035","url":null,"abstract":"This research paper introduces a novel magnetic sensing device named MAGNC-FinFET, which utilizes the conventional NC-FinFET structure as its foundation. This device is capable of measuring vertical magnetic fields through the incorporation of two contacts positioned on either side of the drain. The operating principle relies on the current mode of the Hall effect, leading to the diversion of drain currents at both contact points. By introducing a magnetic field oriented in the positive y-direction and maintaining a bias of 300 μA in the drain current, magnetic measurements are obtained. Furthermore, the influence of the fin width on the device's characteristics and sensitivity has been thoroughly examined. The investigation reveals a proportional increase in both differential currents and relative sensitivity as the fin width parameter is augmented. The paper also presents an extensive review of relevant prior research, highlighting the remarkable qualities of the MAGNC-FinFET as an exceptional magnetic sensor with significantly enhanced sensitivity. This magnetic sensing device based on NC-FinFET shows significant promise as a leading contender for the forthcoming generation of integrated circuits designed for magnetic sensitivity.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"250-256"},"PeriodicalIF":2.4,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical Analysis of Annular Photonic Crystal Based Reconfigurable and Multifunctional Nanoring Symmetrical Resonator for Optical Networks 用于光网络的基于环形光子晶体的可重构多功能纳米对称谐振器的数值分析

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-05 DOI: 10.1109/TNANO.2024.3373013

Pradeep Doss M;R. K. Jeyachitra

引用次数: 0