An Analytical Model Accounting for the Pertinence of Hybrid Tunneling in Bio-TFETs

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-09-17 DOI:10.1109/TNANO.2024.3462605

Joy Chowdhury;Kamalakanta Mahapatra;Angsuman Sarkar;J. K. Das

{"title":"An Analytical Model Accounting for the Pertinence of Hybrid Tunneling in Bio-TFETs","authors":"Joy Chowdhury;Kamalakanta Mahapatra;Angsuman Sarkar;J. K. Das","doi":"10.1109/TNANO.2024.3462605","DOIUrl":null,"url":null,"abstract":"TFETs are being widely considered for next generation computing and sensing applications. They surpass conventional bulk MOSFETs in terms of subthreshold slope, leakage current and short channel effects. This paper presents a semi-analytical model accounting for both point tunneling and line tunneling schemes in a modified split-channel gate overlap source TFET(SC-GOSTFET) architecture. Considering both the tunneling schemes simultaneously along with the added line component enhances the ON-state current thus making the TFETs a better candidate for nano bio-sensors. The increase in length of the tunneling path is the major advantage of this hybrid model. This also helps to ameliorate the effect of quantum confinement in the band edges during band bending. The proposed biosensor shows reasonable agreement with the simulation data obtained from TCAD and 44.21% and 75.62% higher sensitivity over conventional biosensors. Further, the improved ambipolar characteristics can be exploited to influence the detection of a certain category of biomolecules thus increasing the detection range of this hybrid tunneling-based biosensor\n<italic>.</i>","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"658-664"},"PeriodicalIF":2.1000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10681317/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

TFETs are being widely considered for next generation computing and sensing applications. They surpass conventional bulk MOSFETs in terms of subthreshold slope, leakage current and short channel effects. This paper presents a semi-analytical model accounting for both point tunneling and line tunneling schemes in a modified split-channel gate overlap source TFET(SC-GOSTFET) architecture. Considering both the tunneling schemes simultaneously along with the added line component enhances the ON-state current thus making the TFETs a better candidate for nano bio-sensors. The increase in length of the tunneling path is the major advantage of this hybrid model. This also helps to ameliorate the effect of quantum confinement in the band edges during band bending. The proposed biosensor shows reasonable agreement with the simulation data obtained from TCAD and 44.21% and 75.62% higher sensitivity over conventional biosensors. Further, the improved ambipolar characteristics can be exploited to influence the detection of a certain category of biomolecules thus increasing the detection range of this hybrid tunneling-based biosensor .

查看原文本刊更多论文

解释生物场效应晶体管中混合隧道效应重要性的分析模型

TFET 正被广泛考虑用于下一代计算和传感应用。就亚阈值斜率、漏电流和短沟道效应而言，它们超越了传统的体 MOSFET。本文提出了一个半分析模型，该模型考虑了改进型分裂沟道栅重叠源 TFET（SC-GOSTFET）结构中的点隧道和线隧道方案。同时考虑这两种隧道方案以及增加的线分量会增强导通态电流，从而使 TFET 成为纳米生物传感器的更佳候选器件。隧道路径长度的增加是这种混合模型的主要优势。这也有助于在带弯曲过程中改善带边缘的量子约束效应。所提出的生物传感器与 TCAD 获得的模拟数据显示出合理的一致性，灵敏度比传统生物传感器分别高出 44.21% 和 75.62%。此外，改进的伏极特性可用于影响某类生物分子的检测，从而扩大这种基于混合隧道技术的生物传感器的检测范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.