IEEE Transactions on Nanotechnology最新文献_第7页

Amplitude Modulator Design Using Series Graphene Transmission Lines in Terahertz Frequency Band 利用太赫兹频段串联石墨烯传输线设计调幅器

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-04-05 DOI: 10.1109/TNANO.2024.3385507

Saughar Jarchi

{"title":"Amplitude Modulator Design Using Series Graphene Transmission Lines in Terahertz Frequency Band","authors":"Saughar Jarchi","doi":"10.1109/TNANO.2024.3385507","DOIUrl":"10.1109/TNANO.2024.3385507","url":null,"abstract":"In this paper, a layered transmission line based on graphene is designed and investigated to provide amplitude modulation in the low terahertz frequency band. The proposed primary structure is composed of a graphene transmission line on a dielectric layer, as substrate, loaded by a transverse graphene strip and backed by a continuous graphene sheet, as ground plane. The intermediate graphene strip is electrically isolated from the input and output ports. The structure is first investigated by full-wave simulation method, with various chemical potentials of graphenes, and the ABCD matrices are extracted. Then, applying the analytical method based on the ABCD matrices, the scattering parameters of the cascade of several segments of the proposed primary transmission line are investigated, and the promising configuration for the amplitude modulator is derived. It is shown that, variations of signal transmission required by amplitude modulation performance are achieved by cascading six segments of the proposed transmission line and changing the chemical potential of graphene parts. The designed amplitude modulator is investigated, and high modulation depth of nearly 100% and flat response in 3.4–3.8 THz frequency band is achieved.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"323-328"},"PeriodicalIF":2.4,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications 用于模拟/射频应用的铁电负电容 MFMIS 和 MFIS 晶体管的比较评估

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-04-04 DOI: 10.1109/TNANO.2024.3384968

Tian-Tong Cheng;Qiang Li;Yu-Xi Yang;Zhi-Wei Zheng

{"title":"Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications","authors":"Tian-Tong Cheng;Qiang Li;Yu-Xi Yang;Zhi-Wei Zheng","doi":"10.1109/TNANO.2024.3384968","DOIUrl":"10.1109/TNANO.2024.3384968","url":null,"abstract":"As the negative capacitance field-effect transistors (NCFETs) have extensive application prospects and advanced technological support in the analog/radio-frequency (RF) domains, it is important to investigate the theoretical performances of the NCFETs with various feasible structures. In this article, utilizing the TCAD simulation tool and an experimentally calibrated ferroelectric model, we perform a comparative evaluation of MFMIS and MFIS, two prominent NCFET configurations, with regard to their DC/static characteristics and analog/RF performances. Through simulations involving varying ferroelectric thicknesses, it is seen that in comparison with the MFIS device, the MFMIS device demonstrates superior static performances in on-state current (\u0000<italic>I\u0000ON\u0000), off-state current (\u0000<italic>I\u0000OFF\u0000) and subthreshold swing (\u0000<italic>SS\u0000), and the underlying physical effects of these results have also been uncovered. Furthermore, we extracted the device-level analog/RF figures of merits (FoMs) like transconductance (\u0000<italic>g\u0000m\u0000), gate capacitance (\u0000<italic>C\u0000gg\u0000), output conductance (\u0000<italic>g\u0000d\u0000), cutoff frequency (\u0000<italic>f\u0000T\u0000), transconductance generation factor (\u0000<italic>TGF\u0000), transconductance frequency product (\u0000<italic>TFP\u0000), etc from the two structures. It is found that the MFMIS device still possesses advantages in these parameters, and as the thickness of ferroelectric layer increases, the advantages compared to the MFIS device become more pronounced. The investigations in this article indicate that the MFMIS NCFET exhibits superior adaptability and performances in enhancing the analog/RF capabilities of conventional devices as compared with the MFIS device.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"317-322"},"PeriodicalIF":2.4,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140603422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene Oxide Paper as a Lightweight, Thin, and Controllable Microwave Absorber for Millimeter-Wave Applications 石墨烯氧化物纸作为毫米波应用中的轻质、薄型和可控微波吸收器

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-04-04 DOI: 10.1109/TNANO.2024.3385092

Agata Romanowska;Stefan Marynowicz;Tomasz Strachowski;Konrad Godziszewski;Yevhen Yashchyshyn;Adrian Racki;Magdalena Baran;Tymoteusz Ciuk;Adrian Chlanda

{"title":"Graphene Oxide Paper as a Lightweight, Thin, and Controllable Microwave Absorber for Millimeter-Wave Applications","authors":"Agata Romanowska;Stefan Marynowicz;Tomasz Strachowski;Konrad Godziszewski;Yevhen Yashchyshyn;Adrian Racki;Magdalena Baran;Tymoteusz Ciuk;Adrian Chlanda","doi":"10.1109/TNANO.2024.3385092","DOIUrl":"10.1109/TNANO.2024.3385092","url":null,"abstract":"The production and verification of microwave absorbers are a subject of high priority. These are due to the fast development of telecommunication technologies and the need to reduce electromagnetic pollution. Such materials are implementable in multiple industries, including military, medical, and laboratory equipment. One should remember that the desired material should exhibit a high total shielding effectiveness \u0000<italic>SE <inline-formula><tex-math>$_{T}$</tex-math></inline-formula>\u0000 and controllable performance properties. In this work, an ultrathin graphene oxide paper is fabricated and verified as a wide-range, controllable microwave absorber. Stepwise (100 \u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000 C – 200 \u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C – 300 \u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C) thermally reduced G-Flake graphene oxide paper of 4.95 μm thickness revealed the conductivity of 1.86 S/cm. A mild level of reduction was proven with combustion elemental analysis, resulting in a 22.4 oxygen percentage (50.9 % before the reduction). Raman spectroscopy suggested the limitation of Stone-Wales defects after heat treatment. Microwave absorption was measured in the W-band frequency region, and the \u0000<italic>SE<inline-formula><tex-math>$_{T}$</tex-math></inline-formula>/t\u0000 parameter reached 606 dB/mm for a c.a. 5-μm-thick individual reduced paper sheet. The controlled increase in conductivity resulted in conduction losses, and the occurrence of pores enabled scattering, while the absorption remained the primary shielding mechanism.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"329-337"},"PeriodicalIF":2.4,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Non-enzymatic Glucose Sensors of ZnO Nanorods by Adsorb Pt Nanoparticles 通过吸附铂纳米颗粒改进氧化锌纳米棒的非酶葡萄糖传感器

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-04-01 DOI: 10.1109/TNANO.2024.3382635

Yi-Hsing Liu;Sheng-Joue Young;Cheng-Yen Hsien;Yen-Lin Chu;Zi-Hao Wang;Shoou-Jinn Chang

引用次数: 0

BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance 与 BEOL 兼容的 5 nm 超薄 HZO 铁电电容器，具有高剩磁极化和出色的耐久性

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-31 DOI: 10.1109/TNANO.2024.3407817

Li-Cheng Teng;Yu-Che Huang;Shu-Jui Chang;Shin-Yuan Wang;Yu-Hsien Lin;Chao-Hsin Chien

引用次数: 0

Preparation of Dye-Sensitized Solar Cell With Modification of Photoanode by g-C3N4/NiS/TiO2 Nanofibers and Its Performance Under Outdoor and Indoor Illumination 用 g-C3N4/NiS/TiO2 纳米纤维改性光阳极制备染料敏化太阳能电池及其在室外和室内光照下的性能

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-30 DOI: 10.1109/TNANO.2024.3407375

Yu-Hsun Nien;Shang-Wen Zhuang;Jung-Chuan Chou;Chih-Hsien Lai;Po-Hui Yang;Po-Yu Kuo;Po-Feng Chen;Yu-Han Huang

{"title":"Preparation of Dye-Sensitized Solar Cell With Modification of Photoanode by g-C3N4/NiS/TiO2 Nanofibers and Its Performance Under Outdoor and Indoor Illumination","authors":"Yu-Hsun Nien;Shang-Wen Zhuang;Jung-Chuan Chou;Chih-Hsien Lai;Po-Hui Yang;Po-Yu Kuo;Po-Feng Chen;Yu-Han Huang","doi":"10.1109/TNANO.2024.3407375","DOIUrl":"10.1109/TNANO.2024.3407375","url":null,"abstract":"In this study, a novel composite material, g-C\u00003\u0000N\u00004\u0000 - NiS (CN-NiS), was synthesized by the hydrothermal method through the combination of graphitic carbon nitride (g-C\u00003\u0000N\u00004\u0000) and nickel sulfide (NiS). Furthermore, an electrospinning technique was employed to incorporate CN-NiS into titanium dioxide (TiO\u00002\u0000) nanofibers, resulting in the formation of a new type of composite nanofibers (CN-NiS/TiO\u00002\u0000 NFs) to be used as a photoanode in dye-sensitized solar cells (DSSCs). The nanomaterial was characterized, and the charge recombination and performance of the device after modifying the photoanode were evaluated. Firstly, the photovoltaic performance of the modified DSSCs under outdoor illumination (AM 1.5G) was examined. The photoanode with CN-NiS/TiO\u00002\u0000 NFs achieved an 6.65% photoelectric conversion efficiency (PCE), demonstrating significant improvement compared to the unmodified DSSCs. Additionally, the PCE of CN-NiS/TiO\u00002\u0000 NFs photoanode under indoor illumination (T5 fluorescent lamp) reached a maximum of 25.10%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"427-434"},"PeriodicalIF":2.4,"publicationDate":"2024-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141196633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TFET Circuit Configurations Operating Below 60 mV/dec 工作电压低于 60 mV/dec 的 TFET 电路配置

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-30 DOI: 10.1109/TNANO.2024.3407360

Gautham Rangasamy;Zhongyunshen Zhu;Lars Ohlsson Fhager;Lars-Erik Wernersson

引用次数: 0

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors 氧气处理对 IWO 薄膜晶体管电气性能和可靠性的影响

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-25 DOI: 10.1109/TNANO.2024.3381478

Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Shu-Jui Chang;Tsung-En Lee;Chao-Ching Cheng;Meng-Chien Lee;Hui-Hsuan Li;Yu-Hsien Lin;Chao-Hsin Chien

{"title":"Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors","authors":"Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Shu-Jui Chang;Tsung-En Lee;Chao-Ching Cheng;Meng-Chien Lee;Hui-Hsuan Li;Yu-Hsien Lin;Chao-Hsin Chien","doi":"10.1109/TNANO.2024.3381478","DOIUrl":"10.1109/TNANO.2024.3381478","url":null,"abstract":"In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O\u00002\u0000 plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (\u0000<italic>S.S.\u0000) of 122.5 mV/decade, an \u0000<italic>I\u0000on\u0000/\u0000<italic>I\u0000off\u0000 of around 4.7×10\u00008\u0000, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"299-302"},"PeriodicalIF":2.4,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140300280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the Suitability of Stacking Devices in a Vertical Nanowire to Implement a CMOS Inverter 探索在垂直纳米线中堆叠器件以实现 CMOS 逆变器的适用性

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-23 DOI: 10.1109/TNANO.2024.3404615

E. Amat;A. del Moral;J. Bausells;F. Perez-Murano

引用次数: 0

Memristor Based Liquid State Machine With Method for In-Situ Training 基于 Memristor 的液态机器与现场训练方法

IF 2.4 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-03-22 DOI: 10.1109/TNANO.2024.3381008

Alex Henderson;Chris Yakopcic;Cory Merkel;Hananel Hazan;Steven Harbour;Tarek M. Taha

{"title":"Memristor Based Liquid State Machine With Method for In-Situ Training","authors":"Alex Henderson;Chris Yakopcic;Cory Merkel;Hananel Hazan;Steven Harbour;Tarek M. Taha","doi":"10.1109/TNANO.2024.3381008","DOIUrl":"10.1109/TNANO.2024.3381008","url":null,"abstract":"Spiking neural network (SNN) hardware has gained significant interest due to its ability to process complex data in size, weight, and power (SWaP) constrained environments. Memristors, in particular, offer the potential to enhance SNN algorithms by providing analog domain acceleration with exceptional energy and throughput efficiency. Among the current SNN architectures, the Liquid State Machine (LSM), a form of Reservoir Computing (RC), stands out due to its low resource utilization and straightforward training process. In this paper, we present a custom memristor-based LSM circuit design with an online learning methodology. The proposed circuit implementing the LSM is designed using SPICE to ensure precise device level accuracy. Furthermore, we explore liquid connectivity tuning to facilitate a real-time and efficient design process. To assess the performance of our system, we evaluate it on multiple datasets, including MNIST, TI-46 spoken digits, acoustic drone recordings, and musical MIDI files. Our results demonstrate comparable accuracy while achieving significant power and energy savings when compared to existing LSM accelerators. Moreover, our design exhibits resilience in the presence of noise and neuron misfires. These findings highlight the potential of a memristor based LSM architecture to rival purely CMOS-based LSM implementations, offering robust and energy-efficient neuromorphic computing capabilities with memristive SNNs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"376-385"},"PeriodicalIF":2.4,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140203927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0