IEEE Transactions on Nanotechnology最新文献_第6页

Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor 基于铁电隧道场效应晶体管的信号处理应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-07-01 DOI: 10.1109/TNANO.2024.3421263

Been Kwak;Daewoong Kwon;Hyunwoo Kim

{"title":"Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor","authors":"Been Kwak;Daewoong Kwon;Hyunwoo Kim","doi":"10.1109/TNANO.2024.3421263","DOIUrl":"10.1109/TNANO.2024.3421263","url":null,"abstract":"This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage (\u0000<italic>V\u0000TH\u0000). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current \u0000<italic>(I\u0000SC\u0000), 2) channel-to-drain currents (\u0000<italic>I\u0000CD\u0000), and 3) \u0000<italic>I\u0000SC\u0000 and \u0000<italic>I\u0000CD\u0000. Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"562-566"},"PeriodicalIF":2.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Core Reversal in Vertically Coupled Vortices: Simulation and Experimental Study 垂直耦合涡流中的核心逆转：模拟与实验研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-28 DOI: 10.1109/TNANO.2024.3420249

Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro

{"title":"Core Reversal in Vertically Coupled Vortices: Simulation and Experimental Study","authors":"Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro","doi":"10.1109/TNANO.2024.3420249","DOIUrl":"10.1109/TNANO.2024.3420249","url":null,"abstract":"This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"549-553"},"PeriodicalIF":2.1,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System 采用氮化镓纳米线 ni-i-n 二极管的高性能紫外机器视觉系统

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-19 DOI: 10.1109/TNANO.2024.3416509

Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou

{"title":"GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System","authors":"Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou","doi":"10.1109/TNANO.2024.3416509","DOIUrl":"10.1109/TNANO.2024.3416509","url":null,"abstract":"Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"529-534"},"PeriodicalIF":2.1,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Technology-Aware Simulation for Prototyping Molecular Field-Coupled Nanocomputing 面向分子场耦合纳米计算原型的技术感知仿真

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-18 DOI: 10.1109/TNANO.2024.3415790

Federico Ravera;Yuri Ardesi;Gianluca Piccinini;Mariagrazia Graziano

引用次数: 0

Memristor Crossbar Array Simulation for Deep Learning Applications 用于深度学习应用的晶体管交叉阵列仿真

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-17 DOI: 10.1109/TNANO.2024.3415382

Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell

引用次数: 0

Single-Event Upset in Molecular Quantum Cellular Automata 分子量子蜂窝自动机中的单事件颠倒

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-17 DOI: 10.1109/TNANO.2024.3415396

Ehsan Rahimi

引用次数: 0

High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application 微波退火条件下的高稳定性 IWO 薄膜晶体管，适用于低热预算应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413794

Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Hui-Hsuan Li;Meng-Chien Lee;Yu-Hsien Lin;Chao-Hsin Chien

引用次数: 0

Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures 多肽调控自组装 In2O3/ZnO 纳米立方体，在低工作温度下增强 H2 气体传感能力

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413719

Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng

{"title":"Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures","authors":"Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2024.3413719","DOIUrl":"10.1109/TNANO.2024.3413719","url":null,"abstract":"In this study, hydrogen sensors based on In\u00002\u0000O\u00003\u0000/ZnO nanocubes are fabricated by single step hydrothermal route, and polypeptide is utilized to guide the morphology of the composites to heighten the responsiveness of the sensors to hydrogen at low operating temperatures. A series of analyses and validations are carried out by characterization techniques. Gas sensitivity test results display that the optimal operating temperature of the modified sensing element is reduced by 60 °C compared to the initial element, accompanied by a doubling of the response value (22.12). At the same time, the response time to 100 ppm H\u00002\u0000 is 2.5 s. Even more strikingly, the modified gas sensing element has evidently improved the response speed to low-ppm levels hydrogen. Moreover, the sensor components exhibit favorable repeatability, stability and excellent selectivity. By analyzing the characterization data and gas-sensitive test results, the improved responsiveness of the sensing elements is mainly attributed to the synergistic effect of the dilatation in the specific surface area of the gas-sensitive materials and the increase in intergranular contacts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"500-511"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions 理解自整流晶闸管在误差校正物理不可克隆函数中的随机行为

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413888

Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du

{"title":"Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions","authors":"Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du","doi":"10.1109/TNANO.2024.3413888","DOIUrl":"10.1109/TNANO.2024.3413888","url":null,"abstract":"Physical Unclonable Functions (PUFs) have gained widespread attention for their secure key storage, authentication, and anti-counterfeiting applications. While traditional PUFs based on Complementary Metal-Oxide-Semiconductor (CMOS) have been extensively studied, the emergence of memristors offers new opportunities due to their inherent device variations and distinctive resistive switching behaviors. This study explores the construction of reliable PUFs using self-rectifying analog BiFeO\u0000<inline-formula><tex-math>$_{3}$</tex-math></inline-formula>\u0000 (BFO) memristors. We assess the raw bit error rate (rBER) of the BFO-based PUF under varying voltage challenges and classify the switching behavior into stochastic, transition, and deterministic regions. As the primary objective of this study, we identify the sources of stochastic behavior in the three distinct regions while investigating the physical switching mechanism in BFO cells. Additionally, we propose a key storage method based on memristor variability, including an error correction scheme to enhance the reliability of PUF. This research contributes to a comprehensive understanding of PUF reliability and the underlying sources of intrinsic stochastic behavior in memristive technology.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"490-499"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications 通过新型光化学合成方法表征吸附在一维氧化锌纳米材料上的金纳米颗粒在场致发射器中的应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-12 DOI: 10.1109/TNANO.2024.3409631

Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu

{"title":"Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications","authors":"Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu","doi":"10.1109/TNANO.2024.3409631","DOIUrl":"10.1109/TNANO.2024.3409631","url":null,"abstract":"This work explores the growth of vertically aligned zinc oxide nanorod (ZnO NR) arrays on a conductive indium-tin-oxide (ITO) substrate by using a simple hydrothermal solution route method at 95 °C for 3 h. Additionally, the gold nanoparticles (Au NPs) were victoriously adsorbed on the NR surface through a low-cost photochemical method under ultraviolet (UV) light at room temperature for field-emission (FE) emitters. To explore one-dimensional (1-D) nanostructures, high-resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), and field-emission scanning electron microscope (FE-SEM) measurement were conducted. It was found that the NRs were almost perpendicular to the substrate with c-axis direction. The Au concentration of the 1-D NR array was 0.75 at% in energy-dispersive X-ray (EDX) result. ZnO nanomaterials with and without Au NPs were labelled 1-D Z@Au-3 and Z@Au-0 NRs, respectively. The turn-on electric field and effective field enhancement factor (β) of the Z@Au-0 NR devices were 4.56 V/μm and 4902, and those of the Z@Au-3 NR devices were 3.25 V/μm and 12955, respectively. Meanwhile, the slope value of the Z@Au-3 sample (6.43) was also lower than that of the Z@Au-0 NR sample (17.01). It can be seen that the Au NPs enhanced the FE property of the emitter. As a result, the designed 1-D ZnO samples with noble Au NPs are an encouraging candidate in future FE-based device applications, which can use in various electronic applications such as FE display panels, X-ray sources, light sources, and parallel electron beam microscopes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"478-481"},"PeriodicalIF":2.1,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0