IEEE Transactions on Nanotechnology最新文献_第6页

Directional Spin Transport in Zigzag GeC Nanoribbons via Edge Engineering: A DFT-NEGF Perspective 基于边缘工程的z形GeC纳米带的定向自旋输运：DFT-NEGF视角

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-10-13 DOI: 10.1109/TNANO.2025.3620755

Varun Sharma;Neha Bhardwaj;Pankaj Srivastava;Banti Yadav

{"title":"Directional Spin Transport in Zigzag GeC Nanoribbons via Edge Engineering: A DFT-NEGF Perspective","authors":"Varun Sharma;Neha Bhardwaj;Pankaj Srivastava;Banti Yadav","doi":"10.1109/TNANO.2025.3620755","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3620755","url":null,"abstract":"Density functional theory (DFT) and non-equilibrium Green’s function (NEGF) formalism have been employed to investigate the prospects of zigzag germanium carbide nanoribbons (ZGeCNR) for spin filtering applications. We have considered total four possible configurations; firstly, symmetric edge-terminated configurations (H-ZGeCNR-H, 2H-ZGeCNR-2H) and secondly, asymmetric edge-terminated configurations (2H-ZGeCNR-H, H-ZGeCNR-2H). Based on energy calculation, we have predicted that 2H-GeCNR-H exhibits magnetic ground state with preferred ferromagnetic (FM) coupling <inline-formula><tex-math>$Delta$</tex-math></inline-formula>E = 0.137 meV. Calculated spin-polarized <inline-formula><tex-math>$E-k$</tex-math></inline-formula> diagram and DOS profile calculation for 2H-GeCNR-H configuration implies a unique semi-metallic character for spin-down, whereas spin-up posses a wide bandgap of 2.33eV. This interesting half-metallic (HM) behaviour of compounded group-IV nanomaterials (such as SiC, GeC) are different from group-IV elemental counterparts such as (silicene, germanene), which exhibit bipolar magnetic semiconducting behaviour upon asymmetric termination. To demonstrate the behaviour of 2H-GeCNR-H as a spin-filter, <inline-formula><tex-math>$I-V$</tex-math></inline-formula> calculations using two probe device model was performed with both parallel (P-case) and antiparallel (AP-case) spin orientation of the electrodes. The recorded values of <inline-formula><tex-math>$I-V$</tex-math></inline-formula>, transmission spectra clearly highlight the presence of only spin-down current in the channel for both P and AP cases, indicating almost 100% spin filtering efficiency. These results warrant 2H-ZGeCNR-H applicability for high-efficiency spin filters.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"556-563"},"PeriodicalIF":2.1,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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sETNM: Soft-Error-Tolerant Nonvolatile MRAM for Space Applications 用于空间应用的软容错非易失性MRAM

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-10-02 DOI: 10.1109/TNANO.2025.3617228

Govind Prasad;Sankalp Tattwadarshi Swain

引用次数: 0

Oblique Angle Deposition of Slanted TiO2 Columnar for UV Photodetector Application 倾斜TiO2柱状物的斜角度沉积在紫外光电探测器中的应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-10-01 DOI: 10.1109/TNANO.2025.3616005

Salam Surjit Singh;Naorem Khelchand Singh;Sapam Bikesh;Biraj Shougaijam

{"title":"Oblique Angle Deposition of Slanted TiO2 Columnar for UV Photodetector Application","authors":"Salam Surjit Singh;Naorem Khelchand Singh;Sapam Bikesh;Biraj Shougaijam","doi":"10.1109/TNANO.2025.3616005","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3616005","url":null,"abstract":"With the advancement of optoelectronic technology, a new evaluation of photodetectors’ (PDs’) performance is necessary for next-generation sensing applications. This study uses the e-beam evaporation approach to produce slanted titanium dioxide columnar (TiO2-COL) on the Si substrate, with a constant deposition angle of ∼ 61°. The morphology, structural, and optical properties of the fabricated TiO2-COL samples were examined. Successful growth of the slanted TiO2-COL structure is demonstrated by field emission scanning electron microscopy (FE-SEM). Furthermore, XRD analyses reveal that TiO2-COL has an amorphous nature. Optical characterization reveals that the fabricated sample exhibits high absorption intensity in the UV region, for demonstrating a potential UV photodetector application. The TiO2-COL based PD that was deposited obliquely displayed I-V curves that demonstrated a distinct photovoltaic mode and an extremely low dark current of a few nanoamperes. Moreover, at ∼ 320 nm, the device exhibits a self-powered UV light response with a responsivity value of around ∼ 1.3 mA/W. In addition, this TiO2-COL based photodetector device demonstrates a remarkable detectivity and noise-equivalent-power (NEP) and rise time/fall time of ∼ 4.63 × 1010 Jones, ∼ 6.06 × 10−11 W and ∼ 0.305/0.184 sec, respectively, at −0.1 V. Therefore, this novel idea of a slanted TiO2-COL structure promotes effective light management and offers a reliable route for creating Low-powered UV PDs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"489-494"},"PeriodicalIF":2.1,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145255873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing 边缘计算混合门控循环单元的忆阻电路演示

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-25 DOI: 10.1109/TNANO.2025.3614198

Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang

{"title":"Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing","authors":"Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang","doi":"10.1109/TNANO.2025.3614198","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3614198","url":null,"abstract":"In industrial IoT and distributed computing environments, edge computing devices empowered by AI have seen increasing deployment in large-scale scenarios, thereby accelerating the demand for time-series data processing. The gated recurrent unit (GRU) outperforms conventional artificial neural networks (ANNs) in tasks such as natural language processing, speech recognition, and machine translation, due to its superior capability in modeling long-range dependencies in sequential data. However, the GRU model is limited by its large parameter count and structural complexity, which presents a bottleneck in hardware circuit implementation. To this end, a memristor-based hybrid gated recurrent unit (HGRU) is proposed, which reduces the parameter count to 67% of the original GRU and shortens the single-step computation latency by 50%, while maintaining complete circuit functionality. Finally, the proposed memristor-based HGRU circuit model is evaluated on the MNIST digit recognition and IMDB sentiment analysis tasks, achieving recognition accuracies of 97% and 86.2%, respectively. Under equivalent parameter settings, it achieves runtime reductions of 37% and 52% compared to the standard GRU, thereby significantly enhancing computational efficiency.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"481-488"},"PeriodicalIF":2.1,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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An Ultra-Low Power 1.2 pJ/Spike Fully CMOS Spiking Neuron and Its Application 超低功耗1.2 pJ/Spike全CMOS Spike神经元及其应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-23 DOI: 10.1109/TNANO.2025.3613362

Prashant Kumar;Rajeev Kumar Ranjan;Sung-Mo Kang

引用次数: 0

Statistical Investigation of Al$_{2}$O$_{3}$ Insertion Layer on the Endurance of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ Films: Abrupt Endurance Degradation and Mechanism Al$_{2}$O$_{3}$插入层对Hf$_{0.5}$Zr$_{0.5}$O$_{2}$薄膜耐久性的统计研究：耐久性突然退化及其机理

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-18 DOI: 10.1109/TNANO.2025.3611601

Heng Ye;Xiaomin Lai;Xinzhong Zhu;Jing Liu;Xiaoshan Pan;Yuanlu Xie;Lanlong Ji;Kai Xi;Tiancheng Gong;Yuan Qiu

{"title":"Statistical Investigation of Al$_{2}$O$_{3}$ Insertion Layer on the Endurance of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ Films: Abrupt Endurance Degradation and Mechanism","authors":"Heng Ye;Xiaomin Lai;Xinzhong Zhu;Jing Liu;Xiaoshan Pan;Yuanlu Xie;Lanlong Ji;Kai Xi;Tiancheng Gong;Yuan Qiu","doi":"10.1109/TNANO.2025.3611601","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3611601","url":null,"abstract":"In this work, the effect of ultrathin Al<inline-formula><tex-math>$_{bm {2}}$</tex-math></inline-formula>O<inline-formula><tex-math>$_{bm {3}}$</tex-math></inline-formula> insertion layer on the endurance characteristics of Hf<inline-formula><tex-math>$_{bm {0.5}}$</tex-math></inline-formula>Zr<inline-formula><tex-math>$_{bm {0.5}}$</tex-math></inline-formula>O<inline-formula><tex-math>$_{bm {2}}$</tex-math></inline-formula> (HZO) layer is statistically investigated. It was found that the ultrathin Al<inline-formula><tex-math>$_{bm {2}}$</tex-math></inline-formula>O<inline-formula><tex-math>$_{bm {3}}$</tex-math></inline-formula> insertion layer will not improve or reduce the endurance of HZO devices within the low operation voltage range. However, an abrupt endurance degradation phenomenon is observed when increasing the operation voltage to a specific value and the endurance of HZO/Al<inline-formula><tex-math>$_{bm {2}}$</tex-math></inline-formula>O<inline-formula><tex-math>$_{bm {3}}$</tex-math></inline-formula> layer is sharply lower than HZO device. This phenomenon is finally explained by the leakage-current-assist polarization switching mechanism after quantitatively extracting the continuous charge density during the polarization switching by pulse measurement. The findings of this work provide a deep understanding of the endurance failure mechanism of Ferroelectric/Dielectric (FE/DE) devices and are helpful for the reliability investigation of the gate stack in Fe-FET.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"500-503"},"PeriodicalIF":2.1,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145352091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Numerical Modeling and Analysis of Photoresponse in Graphene-Based PIN Junction Devices 基于石墨烯的PIN结器件光响应的数值模拟与分析

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-16 DOI: 10.1109/TNANO.2025.3610119

Vinod Sharma;Jinal Kiran Tapar;Oves Badami;Naresh Kumar Emani

引用次数: 0

Linear, Non-Linear, and Ferroelectric Behavior in 0–3 Nanoparticle-Polymer Dielectrics of Ba(Ti, MV)O3 (M = Nb, Ta) 0-3纳米粒子- Ba(Ti， MV)O3 （M = Nb, Ta）聚合物介电体的线性、非线性和铁电行为

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-05 DOI: 10.1109/TNANO.2025.3606832

Julien Lombardi;Fariha Reza;Nasim Farahmand;Rajinder Deol;Nitika Batra;Jonathan E. Spanier;Christine K. McGinn;Ioannis Kymissis;Stephen O’Brien

{"title":"Linear, Non-Linear, and Ferroelectric Behavior in 0–3 Nanoparticle-Polymer Dielectrics of Ba(Ti, MV)O3 (M = Nb, Ta)","authors":"Julien Lombardi;Fariha Reza;Nasim Farahmand;Rajinder Deol;Nitika Batra;Jonathan E. Spanier;Christine K. McGinn;Ioannis Kymissis;Stephen O’Brien","doi":"10.1109/TNANO.2025.3606832","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3606832","url":null,"abstract":"Nanodielectrics based upon nanoscale Ba(Ti, MV)O3, where M = Nb or Ta, were prepared and electrically characterized for their potential use as a high permittivity dielectric layer. Nanocrystals of Ba(Ti, Nb)O3 (BTNO) and Ba(Ti, Ta)O3 (BTTO) of average size 20 nm (range 10–50 nm) with a non-centrosymmetric (polarizable) crystal structure were synthesized, dispersed in alcohol solvents and blended with three polymers of known but differing dielectric and electromechanical behavior: Polyvinylpyrrolidone (PVP), Polyfurfuryl alcohol (PFA) and Polyvinylidene fluoride–trifluoroethylene (PVDF-TrFE). 0–3 nanoparticle-polymer pressed pellets, films and metal-insulator-metal devices were prepared for electrical characterization. Analysis of the Ba(Ti, MV)O3-PVP and Ba(Ti, MV)O3 -PFA composites showed a high effective permittivity, low loss, low leakage and voltage tolerance, demonstrating the capability for high energy density capacitance. Effective permittivity, of 52 (BTNO-PFA) and 42 (BTTO-PFA) for pellet nanocomposites and 32 (BTNO-PVP) and 20 (BTNO-PVP) film nanocomposites were observed at 1 MHz respectively. Voltage breakdown strengths of 2133 V/mm (BTNO) and 833 V/mm (BTTO) were demonstrated respectively (threshold 0.1 μA). Linear and non-linear dielectric behavior was studied by polarization-electric field (P-E) hysteresis measurements. Nanocomposites of BTNO-PVDF-TrFE were prepared to assess the viability of making ferroelectric nanocomposites over a range of polymer-nanoparticle volume fractions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"452-461"},"PeriodicalIF":2.1,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Oxide-Trapped-Charge-Induced Gate-Diagonal Tunneling Suppression of Gate-Normal Tunnel Field-Effect Transistors 栅极-法向隧道场效应晶体管的氧化俘获电荷诱导栅极-对角隧道抑制

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-09-02 DOI: 10.1109/TNANO.2025.3605557

Kyung Min Koo;Jae Seung Woo;Woo Young Choi

引用次数: 0

Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors 利用氧化半导体薄膜晶体管的光电突触门可调谐保持

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-08-25 DOI: 10.1109/TNANO.2025.3602073

Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair

{"title":"Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors","authors":"Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair","doi":"10.1109/TNANO.2025.3602073","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3602073","url":null,"abstract":"In this work we propose a biasing scheme to modulate the retention behavior of oxide semiconductor based optoelectronic synapses. The method has been demonstrated using a zinc oxide thin film transistor, which exhibits persistent photoconductivity to UV light. The application of a negative gate bias prevents the recombination of photo-generated carriers, leading to a negligible decay in the post synaptic current and consequently, the retention time could extend beyond <inline-formula><tex-math>$10^{5}$</tex-math></inline-formula>s. The improvement in memory retention is observed in various synaptic functions such as short-term memory, long-term memory, duration-time-dependent plasticity and paired pulse facilitation. A five fold improvement in the % decay of post synaptic current was observed at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V, when compared to <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V. Furthermore, we have assessed the impact of these improved retention properties on the performance of an artificial neural network, designed for pattern recognition of MNIST handwritten digits. The accuracy decayed drastically with time from 96% to nearly 40% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V whereas it drops to only 94% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"434-438"},"PeriodicalIF":2.1,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0