300℃氘退火改善SiO2薄膜表面粗糙度的研究

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-12-31 DOI:10.1109/TNANO.2024.3524567

Ju-Won Yeon;Hyo-Jun Park;Eui-Cheol Yun;Moon-Kwon Lee;Tae-Hyun Kil;Yong-Sik Kim;Jun-Young Park

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引用次数: 0

摘要

最近，有人提出在300°C的低温范围内进行氘退火，以增强SiO2栅极电介质和Si/SiO2界面，从而提高器件的可靠性。作为对氘退火的进一步研究，本研究首次比较了湿氧化、干氧化、低压化学气相沉积（LPCVD）和等离子体增强化学气相沉积（PECVD）形成的不同SiO2介电体的氘吸收特性。氘退火也可以用于降低SiO2介电膜的粗糙度和提高均匀性。采用原子力显微镜（AFM）对不同样品在氘退火后的表面粗糙度进行了测量和定量比较。

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Improvement of Surface Roughness in SiO2 Thin Films via Deuterium Annealing at 300 °C

Recently, deuterium annealing at a reduced temperature range of 300 °C has been proposed to enhance SiO₂ gate dielectrics and the Si/SiO₂ interface, thereby improving device reliability. As a further investigation into deuterium annealing, for the first time this study compared deuterium absorption characteristics with various SiO₂ dielectrics formed by wet oxidation, dry oxidation, low-pressure chemical vapor deposition (LPCVD), and plasma-enhanced chemical vapor deposition (PECVD). Deuterium annealing can also be used to reduce the roughness and improve the uniformity of SiO₂ dielectric films. Surface roughness of various samples was measured and quantitatively compared using atomic force microscopy (AFM) after deuterium annealing.

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.