IEEE Transactions on Nanotechnology最新文献_第5页

Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions 嵌入纳米线共振隧道二极管的随机离散掺杂分析及其物理不可克隆功能的产生

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-22 DOI: 10.1109/TNANO.2024.3504963

Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev

{"title":"Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions","authors":"Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev","doi":"10.1109/TNANO.2024.3504963","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504963","url":null,"abstract":"In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000) variations. Such V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"815-821"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach 互连应用的取代掺杂之字形硫化锗纳米带：DFT-NEGF方法

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-22 DOI: 10.1109/TNANO.2024.3504601

Banti Yadav;Pankaj Srivastava;Varun Sharma

{"title":"Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach","authors":"Banti Yadav;Pankaj Srivastava;Varun Sharma","doi":"10.1109/TNANO.2024.3504601","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504601","url":null,"abstract":"Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the \u0000<inline-formula><tex-math>$mathbf {E-k}$</tex-math></inline-formula>\u0000 diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters \u0000<inline-formula><tex-math>$mathbf {(R_{Q}, L_{K}, C_{Q})}$</tex-math></inline-formula>\u0000. The calculation of the transmission channels \u0000<inline-formula><tex-math>$mathbf {(N_{ch})}$</tex-math></inline-formula>\u0000 against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of \u0000<inline-formula><tex-math>$mathbf {R_{Q}}$</tex-math></inline-formula>\u0000 (6.45 Kohm), \u0000<inline-formula><tex-math>$mathbf {L_{K}}$</tex-math></inline-formula>\u0000 \u0000<inline-formula><tex-math>$mathbf {(6.42nH/mu m)}$</tex-math></inline-formula>\u0000, and \u0000<inline-formula><tex-math>$ mathbf {C_{Q}(6.16pF/cm)}$</tex-math></inline-formula>\u0000 for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"809-814"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Efficient and Controlled Thermomechanical Transfer of Electrospun PVDF Nanofiber on Flexible and Transparent PDMS Substrate 静电纺PVDF纳米纤维在柔性透明PDMS基板上的高效可控热转印

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-12 DOI: 10.1109/TNANO.2024.3496487

Ariba Siddiqui;Mitradip Bhattacharjee

{"title":"Highly Efficient and Controlled Thermomechanical Transfer of Electrospun PVDF Nanofiber on Flexible and Transparent PDMS Substrate","authors":"Ariba Siddiqui;Mitradip Bhattacharjee","doi":"10.1109/TNANO.2024.3496487","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3496487","url":null,"abstract":"The growing interest in sensors and microdevices in different applications has led to the exploration of the most efficient and appropriate synthesis methods for flexible device development. In this direction, nanofibers have gained significant attention. However, in many cases, efficient and controlled transfer of nanofibers plays an important role in various device developments. In this study, thermomechanical i.e., temperature and pressure-induced transfer of poly(vinylidene fluoride) (PVDF) electrospun nanofibers on flexible poly(dimethylsiloxane) (PDMS) substrate has been explored. The average diameter of the transferred nanofibers is 169.78 nm. The d\u000033\u0000 of PVDF nanofibers was 25 pC/N and F(β) was found to be 80.84%. The synthesized nanofibers have effectively been transferred onto a flexible PDMS substrate with more than 92% retention of optical transparency. It is observed that the transfer of the fibers depends on the applied pressure and adhesion between the materials. Further, it was found that fully cured PDMS substrate heated at 120 °C showed better transfer efficiency (12.544%) with higher stability. The use of PVDF nanofibers along with the inherent flexibility and transparency of PDMS, renders the produced substrate highly promising for the development of low-cost, lightweight, and easily constructed flexible sensors. Moreover, the fabricated nanofibrous mat generated a maximum voltage of 2.78 V on continuous tapping.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"786-793"},"PeriodicalIF":2.1,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DNA-Based Nanonetwork for Abnormality Detection and Localization in the Human Body 基于 DNA 的纳米网络用于人体异常检测和定位

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-11 DOI: 10.1109/TNANO.2024.3495541

Jorge Torres Gómez;Bige Deniz Unluturk;Florian-Lennert Lau;Jennifer Simonjan;Regine Wendt;Stefan Fischer;Falko Dressler

引用次数: 0

On Bidirectional Transition Between Threshold and Bipolar Switching in Ag/SiO$_{2}$/ITO Memristors Ag/SiO /ITO记忆电阻器阈值与双极开关双向转换研究

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-08 DOI: 10.1109/TNANO.2024.3494856

Zidu Li;Moin Diwan;Phil David Börner;Andreas Bablich;Heidemarie Schmidt;Peter Haring Bolívar;Bhaskar Choubey

引用次数: 0

Dual Metal Split Gate-Based Emulated Synaptic Device With Redacted Plasticity Utilizing Nanogranular Al2O3 Based Ion Conducting Electrolyte 利用纳米颗粒Al2O3离子导电电解质修饰可塑性的双金属裂栅模拟突触器件

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-05 DOI: 10.1109/TNANO.2024.3492021

Reetwik Bhadra;Ramesh Kumar;Amitesh Kumar

{"title":"Dual Metal Split Gate-Based Emulated Synaptic Device With Redacted Plasticity Utilizing Nanogranular Al2O3 Based Ion Conducting Electrolyte","authors":"Reetwik Bhadra;Ramesh Kumar;Amitesh Kumar","doi":"10.1109/TNANO.2024.3492021","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3492021","url":null,"abstract":"This study emphasizes the utilization of split-gate technology in designing a tunable artificial synapse with high energy efficiency. A split-gate dual metal synaptic transistor (SGDMST) is proposed in this work with an Indium-gallium-zinc-oxide (IGZO) channel and a proton-based nanogranular Al\u00002\u0000O\u00003\u0000 electrolyte working on an electric-double-layer (EDL) technique. The split gate, along with the dual metal used, allows precise gate control with high energy efficacy and also enhances the potentiation and depression synaptic strengths of the device. Furthermore, extensive studies have been conducted on the impact of scaling channel width and employing either single or dual metal gate electrodes on synaptic properties. The findings demonstrate precise simulations of synaptic processes, including paired-pulse facilitation, Short-Term Plasticity (STP), Long-Term Plasticity (LTP), and depression, and comparisons are drawn based on the variables examined. The results provide a concise overview of the split-gate synaptic device and its potential impact on developing neuromorphic computing systems.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"765-770"},"PeriodicalIF":2.1,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142757839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Speed and Area-Efficient Serial IMPLY-Based Approximate Subtractor and Comparator for Image Processing and Neural Networks 用于图像处理和神经网络的基于 IMPLY 的高速、高面积效率串行近似减法器和比较器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-10-28 DOI: 10.1109/TNANO.2024.3487223

Nandit Kaushik;B. Srinivasu

{"title":"High-Speed and Area-Efficient Serial IMPLY-Based Approximate Subtractor and Comparator for Image Processing and Neural Networks","authors":"Nandit Kaushik;B. Srinivasu","doi":"10.1109/TNANO.2024.3487223","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3487223","url":null,"abstract":"In-Memory-Computing (IMC) through memristive architectures has recently gained traction owing to their capacity to perform logic operations within a crossbar, optimizing both area and speed constraints. This paper introduces two approximate serial IMPLY-based subtractor designs, denoted as Serial IMPLY-based Approximate Subtractor Design-1 (SIASD-1), Serial IMPLY-based Approximate Subtractor Design-2 (SIASD-2), with potential applications in image processing and deep neural networks. The proposed designs are implemented in MAGIC topology for comparison, named as Serial MAGIC-based Approximate Subtractor Design-1 (SMASD-1) and Serial MAGIC-based Approximate Subtractor Design-2 (SMASD-2). Moreover, these proposed subtractor designs are extended to design magnitude comparators. IMPLY-based approximate designs improve the overall latency up to 1.67× with energy savings in the range of 17.4% to 40.3% while occupying the same number of memristors for SIASD-1 and an increase of 3 to 5 memristors for SIASD-2, compared to the best existing exact 8-bit serial IMPLY subtractor. SMASD-1 and SMASD-2 improve the latency up to 1.43×, and energy efficiency are up by 77.6% compared to other MAGIC-based exact designs. Additionally, as comparators, the SIASD-1 and SIASD-2 are up to 4.93× faster with energy reduction up to 79.7% compared to their IMPLY-based equivalents. Similarly, the SMASD-1 and SMASD-2 reduce the latency up to 62% with area savings of 77%, compared to MAGIC-based equivalent designs. Furthermore, the proposed subtractor designs undergo analysis in an image processing application called Motion Detection, while the comparators are evaluated in Max Pooling operations. With Peak Signal-to-Noise Ratio (PSNR) and Structural Similarity Index Measure (SSIM) serving as assessment metrics, the proposed designs consistently demonstrate acceptable PSNR and SSIM values, affirming their suitability for these applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"748-757"},"PeriodicalIF":2.1,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a Graphene Based Terahertz Perfect Metamaterial Absorber With Multiple Sensing Performance 设计具有多重传感性能的石墨烯基太赫兹完美超材料吸收器

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-10-23 DOI: 10.1109/TNANO.2024.3485758

Leila Shakiba;Mohammad Reza Salehi;Farzin Emami

引用次数: 0

Modeling and Simulation of Correlated Cycle-to- Cycle Variability in the Current-Voltage Hysteresis Loops of RRAM Devices RRAM 器件电流-电压滞后环中相关周期变化的建模与仿真

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-10-23 DOI: 10.1109/TNANO.2024.3485213

E. Salvador;M.B. Gonzalez;F. Campabadal;R. Rodriguez;E. Miranda

{"title":"Modeling and Simulation of Correlated Cycle-to- Cycle Variability in the Current-Voltage Hysteresis Loops of RRAM Devices","authors":"E. Salvador;M.B. Gonzalez;F. Campabadal;R. Rodriguez;E. Miranda","doi":"10.1109/TNANO.2024.3485213","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3485213","url":null,"abstract":"Resistive RAMs or memristors are nowadays considered serious candidates for the implementation of energy efficient and scalable neuromorphic computing systems. However, a major drawback of this technology is the instability of the device current-voltage (I-V) characteristic as is clearly revealed by the so-called cycle-to-cycle (C2C) variability. This lack of complete reproducibility is a consequence of the spontaneous or induced morphological changes of the filamentary conducting structure occurring at atomic level. Variability is an essential issue any compact model for the conduction characteristics of RRAM devices should be able to cope with to be considered realistic. In this work, a thorough investigation of the C2C variability in the I-V loops of HfO\u00002\u0000-based memristive structures was carried out with the aim of incorporating this information into the equations of the Dynamic Memdiode Model. From the compact modeling viewpoint, C2C correlation effects are achieved using model parameters expressed as mean-reverting stochastic processes driven by Wiener noise (Ornstein-Uhlenbeck process). The direct and indirect links between the random behavior of the model parameters and the observable magnitudes (high and low resistance states, set and reset voltages, etc.) are discussed. The agreement between simulation and experimental results is statistically assessed using the Wasserstein's distance metric.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"758-764"},"PeriodicalIF":2.1,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10730782","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Impact of Electron and Hole Trap Profiles in BE-TOX on Retention Characteristics of 3D NAND Flash Memory BE-TOX 中的电子和空穴陷阱剖面对 3D NAND 闪存保持特性的影响

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-10-16 DOI: 10.1109/TNANO.2024.3481392

Gilsang Yoon;Donghyun Go;Jounghun Park;Donghwi Kim;Jongwoo Kim;Ukju An;Jungsik Kim;Jeong-Soo Lee;Byoung Don Kong

引用次数: 0