IEEE Transactions on Nanotechnology最新文献_第5页

Technology-Aware Simulation for Prototyping Molecular Field-Coupled Nanocomputing 面向分子场耦合纳米计算原型的技术感知仿真

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-18 DOI: 10.1109/TNANO.2024.3415790

Federico Ravera;Yuri Ardesi;Gianluca Piccinini;Mariagrazia Graziano

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Memristor Crossbar Array Simulation for Deep Learning Applications 用于深度学习应用的晶体管交叉阵列仿真

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-17 DOI: 10.1109/TNANO.2024.3415382

Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell

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Single-Event Upset in Molecular Quantum Cellular Automata 分子量子蜂窝自动机中的单事件颠倒

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-17 DOI: 10.1109/TNANO.2024.3415396

Ehsan Rahimi

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High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application 微波退火条件下的高稳定性 IWO 薄膜晶体管，适用于低热预算应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413794

Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Hui-Hsuan Li;Meng-Chien Lee;Yu-Hsien Lin;Chao-Hsin Chien

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Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures 多肽调控自组装 In2O3/ZnO 纳米立方体，在低工作温度下增强 H2 气体传感能力

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413719

Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng

{"title":"Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures","authors":"Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2024.3413719","DOIUrl":"10.1109/TNANO.2024.3413719","url":null,"abstract":"In this study, hydrogen sensors based on In\u00002\u0000O\u00003\u0000/ZnO nanocubes are fabricated by single step hydrothermal route, and polypeptide is utilized to guide the morphology of the composites to heighten the responsiveness of the sensors to hydrogen at low operating temperatures. A series of analyses and validations are carried out by characterization techniques. Gas sensitivity test results display that the optimal operating temperature of the modified sensing element is reduced by 60 °C compared to the initial element, accompanied by a doubling of the response value (22.12). At the same time, the response time to 100 ppm H\u00002\u0000 is 2.5 s. Even more strikingly, the modified gas sensing element has evidently improved the response speed to low-ppm levels hydrogen. Moreover, the sensor components exhibit favorable repeatability, stability and excellent selectivity. By analyzing the characterization data and gas-sensitive test results, the improved responsiveness of the sensing elements is mainly attributed to the synergistic effect of the dilatation in the specific surface area of the gas-sensitive materials and the increase in intergranular contacts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"500-511"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions 理解自整流晶闸管在误差校正物理不可克隆函数中的随机行为

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-13 DOI: 10.1109/TNANO.2024.3413888

Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du

{"title":"Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions","authors":"Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du","doi":"10.1109/TNANO.2024.3413888","DOIUrl":"10.1109/TNANO.2024.3413888","url":null,"abstract":"Physical Unclonable Functions (PUFs) have gained widespread attention for their secure key storage, authentication, and anti-counterfeiting applications. While traditional PUFs based on Complementary Metal-Oxide-Semiconductor (CMOS) have been extensively studied, the emergence of memristors offers new opportunities due to their inherent device variations and distinctive resistive switching behaviors. This study explores the construction of reliable PUFs using self-rectifying analog BiFeO\u0000<inline-formula><tex-math>$_{3}$</tex-math></inline-formula>\u0000 (BFO) memristors. We assess the raw bit error rate (rBER) of the BFO-based PUF under varying voltage challenges and classify the switching behavior into stochastic, transition, and deterministic regions. As the primary objective of this study, we identify the sources of stochastic behavior in the three distinct regions while investigating the physical switching mechanism in BFO cells. Additionally, we propose a key storage method based on memristor variability, including an error correction scheme to enhance the reliability of PUF. This research contributes to a comprehensive understanding of PUF reliability and the underlying sources of intrinsic stochastic behavior in memristive technology.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"490-499"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications 通过新型光化学合成方法表征吸附在一维氧化锌纳米材料上的金纳米颗粒在场致发射器中的应用

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-12 DOI: 10.1109/TNANO.2024.3409631

Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu

{"title":"Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications","authors":"Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu","doi":"10.1109/TNANO.2024.3409631","DOIUrl":"10.1109/TNANO.2024.3409631","url":null,"abstract":"This work explores the growth of vertically aligned zinc oxide nanorod (ZnO NR) arrays on a conductive indium-tin-oxide (ITO) substrate by using a simple hydrothermal solution route method at 95 °C for 3 h. Additionally, the gold nanoparticles (Au NPs) were victoriously adsorbed on the NR surface through a low-cost photochemical method under ultraviolet (UV) light at room temperature for field-emission (FE) emitters. To explore one-dimensional (1-D) nanostructures, high-resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), and field-emission scanning electron microscope (FE-SEM) measurement were conducted. It was found that the NRs were almost perpendicular to the substrate with c-axis direction. The Au concentration of the 1-D NR array was 0.75 at% in energy-dispersive X-ray (EDX) result. ZnO nanomaterials with and without Au NPs were labelled 1-D Z@Au-3 and Z@Au-0 NRs, respectively. The turn-on electric field and effective field enhancement factor (β) of the Z@Au-0 NR devices were 4.56 V/μm and 4902, and those of the Z@Au-3 NR devices were 3.25 V/μm and 12955, respectively. Meanwhile, the slope value of the Z@Au-3 sample (6.43) was also lower than that of the Z@Au-0 NR sample (17.01). It can be seen that the Au NPs enhanced the FE property of the emitter. As a result, the designed 1-D ZnO samples with noble Au NPs are an encouraging candidate in future FE-based device applications, which can use in various electronic applications such as FE display panels, X-ray sources, light sources, and parallel electron beam microscopes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"478-481"},"PeriodicalIF":2.1,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep Memristive Cellular Neural Networks for Image Classification and Segmentation 用于图像分类和分割的深度记忆细胞神经网络

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-10 DOI: 10.1109/TNANO.2024.3411689

András Horváth;Franciska Rajki;Alon Ascoli;Ronald Tetzlaff

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Nanostructured V2O5/MoO3 Based Devices for Brain Inspired Optical Memory Applications 基于纳米结构 V2O5/MoO3 的脑启发光学记忆应用器件

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-04 DOI: 10.1109/TNANO.2024.3409151

Sharmila B;Priyanka Dwivedi

引用次数: 0

A Judicious Exploitation of Electrical Characteristics of a Unique GeSn TFET With Corner-Point for Sensing S-Protein Biomarker 巧妙利用具有角点的独特 GeSn TFET 的电气特性来传感 S 蛋白生物标记物

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-06-04 DOI: 10.1109/TNANO.2024.3409055

Sanu Gayen;Suchismita Tewari;Avik Chattopadhyay

{"title":"A Judicious Exploitation of Electrical Characteristics of a Unique GeSn TFET With Corner-Point for Sensing S-Protein Biomarker","authors":"Sanu Gayen;Suchismita Tewari;Avik Chattopadhyay","doi":"10.1109/TNANO.2024.3409055","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3409055","url":null,"abstract":"In this paper, for the first time, a unique Ge\u0000(1-x)\u0000Sn\u0000x\u0000 alloy-based TFET sensor with a deliberate corner-point in the channel has been proposed for successful detection of S-protein, a significant biomarker. After the validation of our simulation scheme through a process of calibration of an experimentally realized mother GeSn TFET device, the same is turned into the proposed sensor device by suitably creating nanogap cavity in it. The performance of the proposed sensor device has been thoroughly investigated as a function of channel epilayer thickness (CH\u0000epi\u0000) in terms of a set of performance metrics – P-responsivity and P-sensitivity. Then, by varying the mole-fraction of Ge\u0000(1-x)\u0000Sn\u0000x\u0000 in the proposed sensor, the sensing performance has been studied in terms of the aforementioned performance metrics, along with an additional unique metric known as dynamic sensitivity. Interestingly, it has been observed that the most suitable device in pure electronic domain (digital or analog) is the least suited in sensing domain and vice-versa. This forbids the tendency of blind-picking of device with enhanced performance in pure electronic domain for sensing purpose as well without proper investigation. After a thorough analysis, it is observed that the proposed sensor with CH\u0000epi\u0000 = 10 nm has evolved as the most optimized sensor device while the choice of mole-fraction remains application specific. Also, the ultimately optimized sensor shows a fairly good performance in dealing with the real-time position variability aspect (even if it is due to the repulsive steric effects of S-protein molecules) which results in a partial hybridization issue.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"467-473"},"PeriodicalIF":2.1,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141435358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0