IEEE Transactions on Nanotechnology最新文献

{"title":"${Mg_{2}Si}$ Source-Based SOI Heterojunction TFET Biosensor With Nanocavity for Ultrasensitive Detection of Lung Cancer Biomarkers","authors":"Varun Mishra;Jaydeep Singh Parmar","doi":"10.1109/TNANO.2026.3729870","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3729870","url":null,"abstract":"In this work, a silicon-on-insulator based heterojunction tunnel field-effect transistor (SOI-HJ-TFET) biosensor with nanocavity is proposed first time for the detection of key lung cancer biomarkers, namely carcinoembryonic antigen (CEA), cytokeratin-19 fragment 21-1 (CYFRA 21-1), and neuron-specific enolase (NSE). The proposed device utilizes a low-bandgap magnesium silicide (<inline-formula><tex-math>$Mg_{2}Si$</tex-math></inline-formula>) source to enhance band-to-band tunneling, improving sensitivity. The nanocavity is functionalized with an APTES-glutaraldehyde matrix for the immobilization of biomarker molecules. The detection methodology employs a charge deduction approach, where biomarker concentrations are converted into an equivalent interface charge, modulating the device’s electrical characteristics. Using calibrated SILVACO ATLAS TCAD simulations, the device’s performance is evaluated for both non-tumorigenic (NTG) and tumorigenic (TG) cell concentrations. The results demonstrate that the presence of cancerous cells leads to a significant reduction in drain current, electron concentration, and band-to-band tunneling rate due to a higher negative equivalent interface charge. The biosensor exhibits high inverse sensitivity, with values up to 12× <inline-formula><tex-math>$10^{3}$</tex-math></inline-formula> for TG CYFRA 21-1 cells. Key performance metrics, including changes in subthreshold swing (<inline-formula><tex-math>$Delta SS$</tex-math></inline-formula> up to 203 mV/decade) and threshold voltage (<inline-formula><tex-math>$Delta V_{T}$</tex-math></inline-formula> up to 637 mV), provide clear differentiation between healthy and cancerous CEA and CYFRA 21-1 cells, respectively. Additionally, sensing time analysis shows rapid response ranging from nanoseconds to microseconds, making the device suitable for real-time biosensing. The proposed SOI-HJ-TFET biosensor exhibits high inverse sensitivity, fast response, and strong inverse selectivity, particularly for CYFRA 21-1, indicating its potential for efficient early-stage lung cancer detection in point-of-care diagnostic platforms.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"342-349"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149033410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Energy-Efficient RFET-Based Stochastic Computing Neural Network Accelerator","authors":"Sheng Lu;Qianhou Qu;Sungyong Jung;Qilian Liang;Chenyun Pan","doi":"10.1109/TNANO.2026.3728685","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3728685","url":null,"abstract":"Stochastic computing (SC) offers significant reductions in hardware complexity for traditional convolutional neural networks (CNNs). However, despite its advantages, stochastic computing neural networks (SCNNs) often suffer from high resource consumption due to components such as stochastic number generators (SNGs) and accumulative parallel counters (APCs), which limit overall performance. This paper proposes a novel SCNN accelerator based on reconfigurable field-effect transistors (RFETs). The inherent reconfigurability at the device level enables the design of highly efficient and compact SNGs, APCs, and other related essential components. To assess their system-level impact, a representative existing SCNN architecture is adopted as an evaluation framework. Based on accessible open-source standard cell libraries, experimental results demonstrate that the proposed RFET-based SCNN accelerator achieves significant reductions in area, latency, and energy consumption compared to its FinFET-based counterpart at the same technology node.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"330-341"},"PeriodicalIF":2.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149033411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient Approximate Ternary Multipliers for Emerging Nanodevices","authors":"L. Hemanth Krishna;B. Srinivasu;K. Sridharan","doi":"10.1109/TNANO.2025.3648734","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3648734","url":null,"abstract":"In this paper, we present efficient designs of <italic>approximate ternary multipliers</i> applicable to several emerging nanodevices. The proposed multipliers are motivated by the multiply-and-accumulate (MAC) operation in convolutional neural networks (CNNs). In particular, CNN applications in imaging are resilient to errors and it is therefore advantageous to examine methods that save energy and reduce the delay. Two <italic>approximate single-digit ternary multipliers</i> are proposed. The single-digit approximate multipliers are used to develop an approximate <inline-formula><tex-math>$3 times 3$</tex-math></inline-formula> and <inline-formula><tex-math>$6 times 6$</tex-math></inline-formula> ternary multipliers. The proposed approximate <inline-formula><tex-math>$6 times 6$</tex-math></inline-formula> multiplier saves energy in the range of 22% to 40% over recent approximate designs. Further, there is a reduction of delay of roughly 21<inline-formula><tex-math>$%$</tex-math></inline-formula> with the proposed multipliers over the best existing design. The multipliers are based on their <italic>exact</i> counterparts which are, in turn, developed using an efficient exact <italic>ternary carry adder (TCAD)</i> that generates the sum of two carry outputs of a single ternary digit multiplier. The application of the approximate multipliers to CNN-based imaging is then demonstrated. In particular, the proposed approximate multipliers have excellent performance for CNN-based image denoising. Further, the approximate multipliers show good performance on MNIST and CIFAR-10 datasets. Simulations for Carbon Nanotube FET (CNTFET) reveal energy savings in excess of 50% over the best existing multipliers.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"1-12"},"PeriodicalIF":2.1,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Ferroelectric Width Variation on Gate-Drain Coupling in Negative Capacitance Double-Gate FinFET","authors":"Jiafei Yao;Jincheng Liu;Yeqin Zhu;Ziwei Hu;Maolin Zhang;Man Li;Kemeng Yang;Jing Chen;Jun Zhang;Yufeng Guo","doi":"10.1109/TNANO.2025.3636943","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3636943","url":null,"abstract":"Negative capacitance FinFET (NC-FinFET) has shown excellent ability in suppressing short channel effect, reducing subthreshold swing (SS) and off-state current. In this paper, a new ferroelectric-width-varied negative capacitance double-gate FinFET (FWV-NC-DG-FinFET) is investigated. A new capacitance model fitted to FWV-NC-DG-FinFET is also established. The model is verified by TCAD simulation of FE/SiO₂ interface potential. The influence of ferroelectric width variation and drain voltage <italic>V</i>_D on the gate-drain coupling is investigated by examining the simulation results of SS, threshold voltage, on-state current and off-state current, and NDR effect. The simulation results show that the FWV-NC-DG-FinFET with lager ferroelectric width at drain side results in severe gate-drain coupling effect and lead to <italic>I</i>_ON/<italic>I</i>_OFF ratio over 10⁷. In contrast, the FWV-NC-DG-FinFET with lager ferroelectric width at source side leads to slighter gate-drain coupling and is able to achieve SS of 51.9 mV/dec and reduce the increment of SS and threshold voltage with increased drain voltage. Meanwhile, the FWV-NC-DG-FinFET with lager ferroelectric width at source side can also mitigates the NDR effect. Furthermore, this paper presents a feasible method to fabricate such FWV-NC-DG-FinFET.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"585-592"},"PeriodicalIF":2.1,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145830828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Partial-Ground-Plane Based Silicon on Insulator Transistor for Energy-Efficient Leaky Integrate-and-Fire Neuron Realizations and Applications","authors":"Mohd Faizan;Sajad A. Loan;Neelofer Afzal;Hend I. Alkhammash","doi":"10.1109/TNANO.2025.3632531","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3632531","url":null,"abstract":"A leaky integrate-and-fire (LIF) neuron with excitatory characteristics is observed for the first time using a MOSFET with partial-ground-plane (PGP) based silicon on insulator for future neuromorphic computing, with a remarkable increase in integration density and energy consumption. Calibrated simulation demonstrates that the proposed device can accurately imitate a real neuron's spiking activity without the use of additional circuitry. Furthermore, the claimed PGP-SELBOX-MOSFET based LIF neuron, with gate length of 50 nm, exhibits a threshold voltage of 0.57 V and needs only 2.84 fJ energy to generate a spike signal, which is exceptionally low when compared to prior research. Moreover, the proposed neuron indicates a spiking frequency that falls within the gigahertz range, almost six orders of magnitude greater than the biological neurons. Additionally, reliability investigations of the n-channel PGP-MOSFET's Positive Bias Temperature Instability (PBTI) and temperature dependent reliability characteristics are carried out in this article. Moreover, the effects of SELBOX separation, PGP separation, PGP doping and temperature on the spiking voltage variations have also been investigated. We further explore the use of this neuron to develop reconfigurable threshold logic gates (TLG) that can be used to perform universal threshold logic gates like NOR and NAND. To validate its practical applicability, a multi-layer SNN was designed, which successfully achieved 92.72% accuracy in image recognition tasks using the proposed neuron.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"564-573"},"PeriodicalIF":2.1,"publicationDate":"2025-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Response Ethanol Gas Sensor Based on g-C3N4@SnO2 Nanocomposites","authors":"Mengran Ran;Hongmin Zhu;Zhan Cheng;Yinghao Guo;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2025.3631690","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3631690","url":null,"abstract":"This research was conducted to exploit a SnO₂-based g-C₃N₄@SnO₂ composite material by modification of SnO₂ with a two-dimensional g-C₃N₄ material, aiming to upgrade the properties of ethanol detection. To verify the structural properties and composition of the composite, XRD, SEM, TEM and EDS techniques were employed for characterization. The findings indicate that the g-C₃N₄@SnO₂ composites have been fabricated successfully and that g-C₃N₄ is efficiently modified in nanosheet form on the surface of SnO₂ nanospheres. The experimental data further indicated that the g-C₃N₄@SnO₂ composites exhibited outstanding ethanol detection performance. In particular, the optimal sensor properties were achieved at a g-C₃N₄ content of 10wt%. At 230 °C and 100 ppm ethanol concentration, the response value of the sensor is as high as 61, which is nearly two times higher compared to the response value of the SnO₂ sensor at 250°C. Furthermore, it offers outstanding selectivity and faster response/recovery time. The notable enhancement in the sensing properties of the g-C₃N₄@SnO₂ composites is primarily ascribed to the heterojunction formed at the interface of the g-C₃N₄ and SnO₂ contacts, as well as the excellent catalytic properties displayed by the g-C₃N₄ as a two-dimensional material.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"574-584"},"PeriodicalIF":2.1,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Temperature and High-Performance Acetone Sensor Based on ZIF-67 Derived Co3O4 Modified by Functionalized Graphene","authors":"Zhiyuan Guo;Jian Zhang;Zhenyu Yuan;Hongmin Zhu;Huai Wang;Fanli Meng","doi":"10.1109/TNANO.2025.3628301","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3628301","url":null,"abstract":"The increasing demand for gas sensors with rapid response, high selectivity, and pronounced sensitivity to trace levels of acetone is evident in both industrial processes and the clinical diagnosis of diabetes. In this study, FGO/Co₃O₄ sensors were synthesized using graphene chemically functionalized with hydroquinone molecules (FGO) and complexed with ZIF-67 derived Co₃O₄. The resultant sensors were evaluated for sensing capabilities, which revealed that the optimally formulated 1%FGO/Co₃O₄ sensor exhibited several advantageous traits when detecting acetone, including low operational temperature, elevated response value, and exceptionally low detection limit. Specifically, the 1%FGO/Co₃O₄ sensor achieved a response value of 180 to 100 ppm acetone at 100 °C and reached a detection limit of 100 ppb. The improved gas-sensitive performances are primarily contributed to the surface defects on composites, the distinctive three-dimensional structure of Co₃O₄, and the synergistic effect between FGO/Co₃O₄ after the formation of heterojunction. With excellent gas sensing properties and low power consumption levels, the FGO/Co₃O₄ sensor has significant potential for real-time monitoring of acetone in industrial environments and medical diagnostics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"546-555"},"PeriodicalIF":2.1,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power-Balanced Memristive Cryptographic Implementation Against Side Channel Attacks","authors":"Ziang Chen;Li-Wei Chen;Xianyue Zhao;Kefeng Li;Heidemarie Krüger;Ilia Polian;Nan Du","doi":"10.1109/TNANO.2025.3623307","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3623307","url":null,"abstract":"Memristors, as emerging nano-devices, offer promising performance and exhibit rich electrical dynamic behavior. Having already found success in applications such as neuromorphic and in-memory computing, researchers are now exploring their potential for cryptographic implementations. In this study, we present a novel power-balanced hiding strategy utilizing memristor groups to conceal power consumption in cryptographic logic circuits. Our approach ensures consistent power costs of all 16 logic gates in Complementary-Resistive-Switching-with-Reading (CRS-R) logic family during writing and reading cycles regardless of Logic Input Variable (LIV) values. By constructing hiding groups, we enable an effective power balance in each gate hiding group. Furthermore, experimental validation of our strategy includes the implementation of a cryptographic construction, xor4SBox, using hiding groups containing NOR gates. The circuit construction without the hiding strategy and with the hiding strategy undergo Test Vector Leakage Assessment (TVLA) based on T-test, confirming the significant improvement achieved with our approach. To address the extensive data requirements necessitated by the T-test, simulated power traces are employed. Our work presents a substantial advancement in power-balanced hiding methods, offering enhanced security and efficiency in logic circuits.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"518-528"},"PeriodicalIF":2.1,"publicationDate":"2025-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Large-Area Field Enhancement via Plasmonic Hot-Grid in Nanocube Arrays","authors":"Anna Lee;Sebastian Carrillo;Young Seok Shon;Aftab Ahmed","doi":"10.1109/TNANO.2025.3622119","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3622119","url":null,"abstract":"Plasmonic nanoparticles have attracted considerable attention due to their ability to amplify local electric fields and generate hot-spots. These hot-spots are highly desirable for enhancing scattering and non-linear processes. Rough surfaces and sharp edges have been previously used for such applications. However, small hot-spot volume and inherent randomness limit their reliability and effectiveness. Here, we propose a design that utilizes interference of surface plasmon polaritons using array of nanocubes. We numerically study the analytical solutions of the metal-insulator-metal (MIM) geometry and conduct finite difference time domain simulations to investigate the optical response of the proposed design. The design offers over 1000-fold local field intensity enhancement which corresponds to over 10⁶-fold Raman enhancement. We demonstrate field enhancement over a large area that we term the “hot-grid”. The design uses the propagating odd surface plasmon polariton mode of MIM geometry produced by an array of nanocubes. The extremely small gap of 1 nm produces significant field enhancement, which is further amplified by constructive interference achieved by multiple reflections, similar to a Fabry-Perot cavity. These results highlight the promise of nanocube arrays for applications that demand significant electric field enhancement, including nonlinear optics, photonics, spectroscopy, sensing, and imaging.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"529-536"},"PeriodicalIF":2.1,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing Contrast and Resolution for Electron-Beam Lithography on Insulating Substrates","authors":"Deepak Kumar;Cooper Meyers;RJ L. Smith;J. Todd Hastings","doi":"10.1109/TNANO.2025.3621301","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3621301","url":null,"abstract":"We report on the effect of ambient gas on the contrast and the resolution of electron beam lithography (EBL) in gaseous environments on insulating substrates. Poly(methyl methacrylate) (PMMA) films were exposed in an environmental scanning electron microscope using a 30 keV electron-beam under 1 mbar pressure of helium, water, nitrogen, and argon. We found that the choice of ambient gas results in significant variations in contrast, and the clearing dose increases with the gases’ molecular weight and proton number, consistent with the increase in scattering cross-section. Significantly higher contrast values are obtained for exposure under helium and are accompanied by improved sensitivity. Despite higher sensitivity, helium exhibited the best resolution with 20-nm half-pitch dense lines and spaces. However, water vapor offered a larger process window, particularly on fused silica substrates. We also provide evidence to support our hypothesis that higher sensitivity stems from effective charge dissipation. Thus, for EBL on insulating substrates, helium and water vapor may be desirable choices for charge dissipation depending on the substrate and process conditions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"510-517"},"PeriodicalIF":2.1,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}