三维沟道形状对纳米级全栅极场效应晶体管性能的影响

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2025-03-03 DOI:10.1109/TNANO.2025.3546872

Min Kyun Sohn;Sang-Hoon Kim;Seong Hyun Lee;Jeong Woo Park;Dongwoo Suh

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引用次数: 0

摘要

近年来对晶体管的研究主要集中在栅极全控（GAA）结构上，它比以往的翅片场效应晶体管（FinFET）结构具有更好的栅极可控性。通过不同的通道形状优化了这些器件的特性。然而，具有相同横截面积通道的gaa - fet的特性需要进一步研究。在本研究中，我们使用Global TCAD Solutions仿真工具模拟了n型gaa - fet，分析了通过设置等截面积获得的有效特性。结果表明，在相同面积下，基于形状的总导通电流增强幅度可达40.5%。同样，在相同条件下，基于形状的通/关电流比的差异约为1.5倍。这些发现有助于确定GAA通道的最佳形状，并预测当物理限制限制通道形状时的性能。此外，它们有助于在量产中改善gaa - fet的特性。

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Effects of 3D Channel Shape on the Performance of Nanoscale Gate-All-Around FETs

Recent research on transistors has focused on gate-all-around (GAA) structures, which possess better gate controllability than previous fin field-effect transistor (FinFET) structures. The characteristics of these devices have been optimized through different channel shapes. However, the characteristics of GAA-FETs with channels that have the same cross-sectional area warrant further research. In this study, we simulated n-type GAA-FETs using the Global TCAD Solutions simulation tool to analyze the effective characteristics obtained by setting equal cross-sectional areas. The results show that the total on-current exhibited up to 40.5% enhancement based on shape for the same area. Similarly, under the same conditions, the on/off current ratio exhibited a difference of approximately 1.5 times based on the shape. These findings help determine the optimal shape of the GAA channel and predict the performance when physical limitations restrict the channel shape. Furthermore, they contribute to improving the characteristics of GAA-FETs in mass production.

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.