Ti-Doped ZnO Nanowires: A Breakthrough in Non-Volatile Resistive Memory Application

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2025-02-21 DOI:10.1109/TNANO.2025.3544438

Amitabha Nath;Madhuri Mishra;Subhananda Chakrabarti

引用次数: 0

Abstract

This paper explores the enhanced resistive memory capabilities of titanium (Ti)-doped zinc oxide (ZnO) nanowires (NWs) based devices. Utilizing pulsed laser deposition (PLD), ZnO NWs were fabricated on a ZnO seed film (SF), while Ti films were deposited using an electron beam evaporation technique. Two distinct devices, TZO NWs and ZnO NWs, were created with gold (Au) interdigitated electrodes (IDE). The TZO NWs based device exhibited superior resistive memory performances, showcasing a maximum window of 2.6 V at +10 V and 1.2 V at –10 V, surpassing the ZnO NWs based device. The introduction of Ti doping in ZnO NWs provided additional active sites for charge collection, introducing localized energy levels and enhancing overall device performance. These findings collectively highlight the scalability of the TZO NWs based device for next-generation non-volatile resistive memory (NVRM) applications.

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ti掺杂ZnO纳米线：非易失性电阻存储应用的突破

本文探讨了钛（Ti）掺杂氧化锌（ZnO）纳米线（NWs）器件的增强电阻记忆能力。利用脉冲激光沉积技术（PLD）在ZnO种子膜（SF）上制备ZnO NWs，利用电子束蒸发技术制备Ti薄膜。用金（Au）互指电极（IDE）制备了两种不同的器件，TZO NWs和ZnO NWs。基于TZO NWs的器件表现出优异的电阻性记忆性能，在+10 V和-10 V时的最大窗口分别为2.6 V和1.2 V，超过了基于ZnO NWs的器件。在ZnO NWs中引入Ti掺杂为电荷收集提供了额外的活性位点，引入了局部能级并提高了整体器件性能。这些发现共同强调了基于TZO NWs的器件在下一代非易失性电阻性存储器（NVRM）应用中的可扩展性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.