Ti-Doped ZnO Nanowires: A Breakthrough in Non-Volatile Resistive Memory Application

Abstract

This paper explores the enhanced resistive memory capabilities of titanium (Ti)-doped zinc oxide (ZnO) nanowires (NWs) based devices. Utilizing pulsed laser deposition (PLD), ZnO NWs were fabricated on a ZnO seed film (SF), while Ti films were deposited using an electron beam evaporation technique. Two distinct devices, TZO NWs and ZnO NWs, were created with gold (Au) interdigitated electrodes (IDE). The TZO NWs based device exhibited superior resistive memory performances, showcasing a maximum window of 2.6 V at +10 V and 1.2 V at –10 V, surpassing the ZnO NWs based device. The introduction of Ti doping in ZnO NWs provided additional active sites for charge collection, introducing localized energy levels and enhancing overall device performance. These findings collectively highlight the scalability of the TZO NWs based device for next-generation non-volatile resistive memory (NVRM) applications.