Insights Into Temperature Sensitivity Analysis of Polarity Controlled Charge Plasma Based Tunable Arsenide/Antimonide Tunneling Interfaced Junctionless TFET

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2025-01-21 DOI:10.1109/TNANO.2025.3532313

S. Sharma;J. Madan;R. Chaujar

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Abstract

This research delves into the temperature-dependent performance of a novel polarity-controlled charge plasma-based InAs/AlGaSb tunneling interfaced junctionless TFET (H-JLTFET). The device leverages the benefits of both charge plasma and heterojunction engineering to enhance device performance. Comprehensive simulations were conducted to assess the impact of temperature on device characteristics. Results indicate that while the device exhibits promising ON-state current and high-frequency metrics, with a peak f_T of 417 GHz and an f_max of 4390 GHz, the subthreshold region is significantly influenced by temperature. The observed increase in OFF-state current and degradation in subthreshold swing highlight the need for careful thermal management and circuit design. Furthermore, the study reveals a moderate impact of temperature on intrinsic delay and a slight increase in ambipolar current. Overall, this work provides valuable insights into the thermal behavior of H-JLTFETs, paving the way for optimized device design and reliable operation in various applications.

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这项研究深入探讨了基于极性控制电荷等离子体的新型 InAs/AlGaSb 隧道接口无结 TFET（H-JLTFET）随温度变化的性能。该器件充分利用了电荷等离子体和异质结工程的优势来提高器件性能。我们进行了全面模拟，以评估温度对器件特性的影响。结果表明，虽然该器件显示出良好的导通态电流和高频指标（峰值 fT 为 417 GHz，fmax 为 4390 GHz），但亚阈值区受到温度的显著影响。观察到的关态电流增大和亚阈值摆幅减小的现象突出表明，需要精心进行热管理和电路设计。此外，研究还发现温度对本征延迟的影响适中，而伏极电流则略有增加。总之，这项研究为 H-JLTFET 的热行为提供了宝贵的见解，为优化器件设计和在各种应用中可靠运行铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.