Demonstration of a Ternary Inverter Based on the Novel TDDFET With Dual-Doped Source and Asymmetric Gates

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-11-25 DOI:10.1109/TNANO.2024.3505985

Bin Lu;Hua Qiang;Xiaotao Liu;Dawei Wang;Yan Cui;Zhu Li;Jiale Sun;Hongliang Lu

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Abstract

In this paper, a novel tunneling-drift-diffusion field-effect transistor (TDDFET) is introduced with dual-doped source and asymmetric gates. In the TDDFET, the current is conducted by two mechanisms, namely the band-to-band tunneling and drift-diffusion, making the device can present an additional state between the on and off states, and very suitable for the ternary logic design. Additionally, a standard ternary inverter (STI) is also implemented based on the TDDFET and studied in detail by the aid of TCAD simulation. It turns out that the supply voltage V_DD shows significant influence on the ternary inverter and the optimized value is about 3V_turn/2 in which V_turn is the transition voltage on the transfer curve. The influence of key device parameters are also studied in detail. Compared with other ternary inverters, our designed ternary inverter requiring no any immature material, passive device and multi-valued power supply, is more friendly with the CMOS platform and can make the most of the advantages of the ternary logic.

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基于新型双掺杂源非对称栅极TDDFET的三元逆变器演示

本文介绍了一种具有双掺杂源和非对称栅极的新型隧道漂移扩散场效应晶体管（TDDFET）。在TDDFET中，电流通过带间隧穿和漂移扩散两种机制传导，使得器件可以在导通和关断状态之间呈现额外的状态，非常适合三元逻辑设计。此外，基于TDDFET实现了一个标准的三元逆变器（STI），并借助TCAD仿真进行了详细的研究。结果表明，电源电压VDD对三元逆变器影响显著，其最优值约为3Vturn/2，其中Vturn为转换曲线上的过渡电压。并对关键器件参数的影响进行了详细研究。与其他三元逆变器相比，我们设计的三元逆变器不需要任何不成熟的材料，无源器件和多值电源，更适合CMOS平台，可以充分发挥三元逻辑的优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.