Dual Metal Split Gate-Based Emulated Synaptic Device With Redacted Plasticity Utilizing Nanogranular Al2O3 Based Ion Conducting Electrolyte

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Reetwik Bhadra;Ramesh Kumar;Amitesh Kumar
{"title":"Dual Metal Split Gate-Based Emulated Synaptic Device With Redacted Plasticity Utilizing Nanogranular Al2O3 Based Ion Conducting Electrolyte","authors":"Reetwik Bhadra;Ramesh Kumar;Amitesh Kumar","doi":"10.1109/TNANO.2024.3492021","DOIUrl":null,"url":null,"abstract":"This study emphasizes the utilization of split-gate technology in designing a tunable artificial synapse with high energy efficiency. A split-gate dual metal synaptic transistor (SGDMST) is proposed in this work with an Indium-gallium-zinc-oxide (IGZO) channel and a proton-based nanogranular Al\n<sub>2</sub>\nO\n<sub>3</sub>\n electrolyte working on an electric-double-layer (EDL) technique. The split gate, along with the dual metal used, allows precise gate control with high energy efficacy and also enhances the potentiation and depression synaptic strengths of the device. Furthermore, extensive studies have been conducted on the impact of scaling channel width and employing either single or dual metal gate electrodes on synaptic properties. The findings demonstrate precise simulations of synaptic processes, including paired-pulse facilitation, Short-Term Plasticity (STP), Long-Term Plasticity (LTP), and depression, and comparisons are drawn based on the variables examined. The results provide a concise overview of the split-gate synaptic device and its potential impact on developing neuromorphic computing systems.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"765-770"},"PeriodicalIF":2.1000,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10742951/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This study emphasizes the utilization of split-gate technology in designing a tunable artificial synapse with high energy efficiency. A split-gate dual metal synaptic transistor (SGDMST) is proposed in this work with an Indium-gallium-zinc-oxide (IGZO) channel and a proton-based nanogranular Al 2 O 3 electrolyte working on an electric-double-layer (EDL) technique. The split gate, along with the dual metal used, allows precise gate control with high energy efficacy and also enhances the potentiation and depression synaptic strengths of the device. Furthermore, extensive studies have been conducted on the impact of scaling channel width and employing either single or dual metal gate electrodes on synaptic properties. The findings demonstrate precise simulations of synaptic processes, including paired-pulse facilitation, Short-Term Plasticity (STP), Long-Term Plasticity (LTP), and depression, and comparisons are drawn based on the variables examined. The results provide a concise overview of the split-gate synaptic device and its potential impact on developing neuromorphic computing systems.
利用纳米颗粒Al2O3离子导电电解质修饰可塑性的双金属裂栅模拟突触器件
本研究强调利用劈闸技术设计高能量效率的可调人工突触。本文提出了一种分栅双金属突触晶体管(SGDMST),该晶体管采用铟镓锌氧化物(IGZO)通道和基于质子的纳米颗粒Al2O3电解质在双电层(EDL)技术上工作。分门,以及使用的双金属,允许精确的栅极控制,具有高能量效率,也增强了设备的增强和抑制突触强度。此外,关于调节通道宽度和使用单或双金属栅电极对突触特性的影响已经进行了广泛的研究。研究结果显示了突触过程的精确模拟,包括成对脉冲促进、短期可塑性(STP)、长期可塑性(LTP)和抑郁,并根据所检查的变量进行了比较。研究结果提供了对劈门突触装置及其对发展神经形态计算系统的潜在影响的简要概述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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