Dual Metal Split Gate-Based Emulated Synaptic Device With Redacted Plasticity Utilizing Nanogranular Al2O3 Based Ion Conducting Electrolyte

Abstract

This study emphasizes the utilization of split-gate technology in designing a tunable artificial synapse with high energy efficiency. A split-gate dual metal synaptic transistor (SGDMST) is proposed in this work with an Indium-gallium-zinc-oxide (IGZO) channel and a proton-based nanogranular Al ₂ O ₃ electrolyte working on an electric-double-layer (EDL) technique. The split gate, along with the dual metal used, allows precise gate control with high energy efficacy and also enhances the potentiation and depression synaptic strengths of the device. Furthermore, extensive studies have been conducted on the impact of scaling channel width and employing either single or dual metal gate electrodes on synaptic properties. The findings demonstrate precise simulations of synaptic processes, including paired-pulse facilitation, Short-Term Plasticity (STP), Long-Term Plasticity (LTP), and depression, and comparisons are drawn based on the variables examined. The results provide a concise overview of the split-gate synaptic device and its potential impact on developing neuromorphic computing systems.